公开(公告)号：US20230097366A1

公开(公告)日：2023-03-30

申请号：US17953099

申请日：2022-09-26

申请人： INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY ERICA CAMPUS ,  AJOU UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION

发明人： Tae Joo PARK ,  Sang Woon LEE ,  Tae Jun SEOK ,  Ji Hyeon CHOI

IPC分类号： H01L29/778 ,  H01L21/02 ,  H01L29/51 ,  H01L29/423

摘要： Provided is an electronic device including a lower material film, an upper material film on the lower material film, a two-dimensional electron gas between the lower material film and the upper material film, a source electrode on the upper material film, a drain electrode on the upper material film, and a gate electrode on the upper material film, wherein the upper material film includes a first portion in contact with the source electrode, a second portion in contact with the gate electrode, and a third portion in contact with the drain electrode, wherein a thickness of the second portion of the upper material film is greater than a thickness of the first portion of the upper material film and a thickness of the third portion of the upper material film, wherein the voltage drop and the threshold voltage are adjusted by adjusting the thicknesses of the first to third portions of the upper material film.

公开(公告)号：US20220407002A1

公开(公告)日：2022-12-22

申请号：US17760967

申请日：2020-09-17

申请人： AJOU UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION ,  INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY ERICA CAMPUS

发明人： Sang Woon LEE ,  Tae Joo PARK ,  Hae Jun JUNG ,  Sung Min KIM ,  Hye Ju KIM ,  Seong Hwan KIM

IPC分类号： H01L45/00 ,  H01L27/24

摘要： Disclosed is a resistive switching element. The resistive switching element includes a first oxide layer and a second oxide layer stacked one on top of the other such that an interface is present therebetween, wherein the first oxide layer and the second oxide layer are made of different metal oxides; two-dimensional electron gas (2DEG) present in the interface between the first oxide layer and the second oxide layer and functioning as an inactive electrode; and an active electrode disposed on the second oxide layer, wherein when a positive bias is applied to the active electrode, an electric field is generated between the active electrode and the two-dimensional electron gas, such that the second oxide layer is subjected to the electric field, and active metal ions from the active electrode are injected into the second oxide layer. The resistive switching element realizes highly uniform resistive switching operation.

公开(公告)号：US20230101276A1

公开(公告)日：2023-03-30

申请号：US17953101

申请日：2022-09-26

申请人： INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY ERICA CAMPUS ,  AJOU UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION

发明人： Tae Joo PARK ,  Sang Woon LEE ,  Tae Jun SEOK ,  Ji Hyeon CHOI

IPC分类号： H01L29/778 ,  H01L21/02 ,  H01L29/51 ,  H01L29/423

摘要： Provided is an electronic device including a first lower material film, a first upper material film on the first lower material film, a first two-dimensional electron gas between the first lower material film and the first upper material film, a second lower material film on the first upper material film, a second upper material film on the second lower material film, a second two-dimensional electron gas between the second lower material film and the second upper material film, a source electrode on the second upper material film, a drain electrode on the second upper material film, a gate insulating film on the second upper material film, and a gate electrode on the gate insulating film.

公开(公告)号：US20230005537A1

公开(公告)日：2023-01-05

申请号：US17855424

申请日：2022-06-30

申请人： SK hynix Inc. ,  Industry-University Cooperation Foundation Hanyang University ERICA Campus

发明人： Tae Jung HA ,  Soo Gil KIM ,  Jeong Hwan SONG ,  Tae Joo PARK ,  Tae Jun SEOK ,  Hye Rim KIM ,  Hyun Seung CHOI

IPC分类号： G11C13/00 ,  H01L45/00 ,  G11C11/16 ,  H01L27/24

摘要： Disclosed are a method of operating a selector device, a method of operating a nonvolatile memory apparatus to which the selector device is applied, an electronic circuit device including the selector device, and a nonvolatile memory apparatus. The method of operating the selector device controls access to a memory element, and includes providing the selector device including a switching layer and first and second electrodes disposed on both surfaces of the switching layer, which includes an insulator and a metal element, and applying a multi-step voltage pulse to the switching layer via the first and second electrodes to adjust a threshold voltage of the selector device, the multi-step voltage pulse including a threshold voltage control pulse and an operating voltage pulse. The operating voltage pulse has a magnitude for turning on the selector device, and the threshold voltage control pulse has a lower magnitude lower than the operating voltage pulse.