公开(公告)号：US20140265098A1

公开(公告)日：2014-09-18

申请号：US13833616

申请日：2013-03-15

Applicant: INFINEON TECHNOLOGIES AG

Inventor： Christian Himmelsbach ,  Joachim Hirschler ,  Helmut Brunner

IPC: B23Q7/00

CPC classification number: B23Q7/005 ,  H01L21/68742

Abstract: Lift pins and devices having lift pins are provided. According to an aspect, a lift pin may have a tapered distal portion. According to another aspect, a lift pin may have two portions threadedly engaged with each other. According to yet another aspect, a lift pin may be mounted to a lifting plate with slackness.

Abstract translation: 提供具有升降销的提升销和装置。 根据一方面，提升销可以具有锥形远端部分。 根据另一方面，提升销可以具有彼此螺纹接合的两个部分。 根据另一方面，提升销可以以松弛的方式安装到提升板上。

公开(公告)号：US10195704B2

公开(公告)日：2019-02-05

申请号：US13833616

申请日：2013-03-15

Applicant: Infineon Technologies AG

Inventor： Christian Himmelsbach ,  Joachim Hirschler ,  Helmut Brunner

IPC: B23Q7/00 ,  H01L21/687

Abstract: Lift pins and devices having lift pins are provided. According to an aspect, a lift pin may have a tapered distal portion. According to another aspect, a lift pin may have two portions threadedly engaged with each other. According to yet another aspect, a lift pin may be mounted to a lifting plate with slackness.

公开(公告)号：US20140145345A1

公开(公告)日：2014-05-29

申请号：US13685748

申请日：2012-11-27

Applicant: INFINEON TECHNOLOGIES AG

Inventor： Helmut Brunner ,  Joachim Hirschler

IPC: H01L23/538 ,  H01L21/48

CPC classification number: H01L21/486 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/53238 ,  H01L23/53266 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of forming a semiconductor structure in accordance with various embodiments may include: forming at least one opening in a workpiece; forming a first conductive layer within the at least one opening, the first conductive layer not completely filling the at least one opening; forming a fill layer over the first conductive layer within the at least one opening; and forming a second conductive layer over the fill layer.

Abstract translation: 根据各种实施例的形成半导体结构的方法可以包括：在工件中形成至少一个开口; 在所述至少一个开口内形成第一导电层，所述第一导电层不完全填充所述至少一个开口; 在所述至少一个开口内的所述第一导电层上形成填充层; 以及在所述填充层上形成第二导电层。