公开(公告)号：US20150203350A1

公开(公告)日：2015-07-23

申请号：US14675672

申请日：2015-03-31

Applicant: INFINEON TECHNOLOGIES AG

Inventor： Thoralf KAUTZSCH ,  Boris BINDER ,  Torsten HELM ,  Stefan KOLB ,  Marc PROBST ,  Uwe RUDOLPH

IPC: B81C1/00

CPC classification number: B81C1/00523 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81C1/00158 ,  B81C1/0038

Abstract: Embodiments related to semiconductor manufacturing and semiconductor devices with semiconductor structure are described and depicted.

Abstract translation: 描述和描述了与半导体制造相关的实施例和具有半导体结构的半导体器件。

公开(公告)号：US20180166338A1

公开(公告)日：2018-06-14

申请号：US15798972

申请日：2017-10-31

Applicant: Infineon Technologies AG

Inventor： Frank HOFFMANN ,  Dirk MANGER ,  Andreas PRIBIL ,  Marc PROBST ,  Stefan TEGEN

IPC: H01L21/8249 ,  H01L29/08 ,  H01L29/737 ,  H01L29/66 ,  H01L29/10 ,  H01L29/06 ,  H01L27/06

CPC classification number: H01L21/8249 ,  H01L27/0623 ,  H01L29/0649 ,  H01L29/0692 ,  H01L29/0804 ,  H01L29/0817 ,  H01L29/0821 ,  H01L29/1004 ,  H01L29/66242 ,  H01L29/66272 ,  H01L29/7371

Abstract: A method comprises providing a substrate of a first conductive type and a layer stack arranged on the substrate. The layer stack comprises a first isolation layer, a sacrificial layer, and a second isolation layer. The layer stack comprises a window formed in the layer stack through the second isolation layer, the sacrificial layer and the first isolation layer up to a surface region of the substrate. The method comprises providing a collector layer. The method comprises providing a base layer on the collector layer within the window of the layer stack. The method comprises providing an emitter layer or an emitter layer stack comprising the emitter layer on the base layer within the window of the layer stack. The method further comprises selectively removing the emitter layer or the emitter layer stack at least up to the second isolation layer.

公开(公告)号：US20160322257A1

公开(公告)日：2016-11-03

申请号：US15083774

申请日：2016-03-29

Applicant: Infineon Technologies AG

Inventor： Frank HOFFMANN ,  Dirk MANGER ,  Andreas PRIBIL ,  Marc PROBST ,  Stefan TEGEN

IPC: H01L21/8249 ,  H01L29/08 ,  H01L29/10 ,  H01L27/06 ,  H01L29/06

CPC classification number: H01L21/8249 ,  H01L27/0623 ,  H01L29/0649 ,  H01L29/0692 ,  H01L29/0804 ,  H01L29/0817 ,  H01L29/0821 ,  H01L29/1004 ,  H01L29/66242 ,  H01L29/66272 ,  H01L29/7371

Abstract: A method comprises providing a substrate of a first conductive type and a layer stack arranged on the substrate. The layer stack comprises a first isolation layer, a sacrificial layer, and a second isolation layer. The layer stack comprises a window formed in the layer stack through the second isolation layer, the sacrificial layer and the first isolation layer up to a surface region of the substrate. The method comprises providing a collector layer. The method comprises providing a base layer on the collector layer within the window of the layer stack. The method comprises providing an emitter layer or an emitter layer stack comprising the emitter layer on the base layer within the window of the layer stack. The method further comprises selectively removing the emitter layer or the emitter layer stack at least up to the second isolation layer.

Abstract translation: 一种方法包括提供第一导电类型的衬底和布置在衬底上的层堆叠。 层叠包括第一隔离层，牺牲层和第二隔离层。 层叠层包括通过第二隔离层形成在层堆叠中的窗口，牺牲层和第一隔离层直到衬底的表面区域。 该方法包括提供收集层。 该方法包括在层堆叠的窗口内的集电极层上提供基层。 该方法包括在层堆叠的窗口内的基底层上提供包括发射极层的发射极层或发射极层堆叠。 该方法还包括至少直到第二隔离层选择性地去除发射极层或发射极层堆叠。