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公开(公告)号：US20230116926A1
公开(公告)日：2023-04-20
申请号：US18069371
申请日：2022-12-21
Applicant: Infineon Technologies AG
Inventor： Rainer Markus SCHALLER , Jochen DANGELMAIER , Matthias EBERL , Simon GASSNER , Franz JOST , Stefan KOLB , Horst THEUSS
Abstract: A photoacoustic sensor includes a first MEMS device and a second MEMS device. The first MEMS device includes a first MEMS component including an optical emitter, and a first optically transparent cover wafer-bonded to the first MEMS component, wherein the first MEMS component and the first optically transparent cover form a first closed cavity. The second MEMS device includes a second MEMS component including a pressure detector, and a second optically transparent cover wafer-bonded to the second MEMS component, wherein the second MEMS component and the second optically transparent cover form a second closed cavity.
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2.发明申请METHOD FOR DOPING AN ACTIVE HALL EFFECT REGION OF A HALL EFFECT DEVICE AND HALL EFFECT DEVICE HAVING A DOPED ACTIVE HALL EFFECT REGION 有权用于对具有有效霍尔效应区域的霍尔效应器件和霍尔效应器件进行有效霍尔效应区域的方法公开(公告)号：US20160268498A1
公开(公告)日：2016-09-15
申请号：US15069370
申请日：2016-03-14
Applicant: Infineon Technologies AG
Inventor： Markus ECKINGER , Stefan KOLB
CPC classification number: H01L43/04 , G01R33/0052 , G01R33/07 , H01L43/065 , H01L43/14
Abstract: Methods for doping an active Hall effect region of a Hall effect device in a semiconductor substrate, and Hall effect devices having a doped active Hall effect region are provided. A method includes forming a first doping profile of a first doping type in a first depth region of the active Hall effect region by means of a first implantation with a first implantation energy level, forming a second doping profile of the first doping type in a second depth region of the active Hall effect region by means of a second implantation with a second implantation energy level, and forming an overall doping profile of the active Hall effect region by annealing the semiconductor substrate with the active Hall effect region having the first and the second doping profile.
Abstract translation: 在半导体衬底中掺杂霍尔效应器件的有源霍尔效应区域的方法以及具有掺杂的有源霍尔效应区域的霍尔效应器件。 一种方法包括通过具有第一注入能级的第一注入，在有源霍尔效应区的第一深度区域中形成第一掺杂类型的第一掺杂分布，在第二掺杂分布中形成第一掺杂类型的第二掺杂分布 通过具有第二注入能级的第二注入，激活霍尔效应区的深度区域，并且通过用具有第一和第二的有源霍尔效应区域退火半导体衬底来形成有源霍尔效应区的整体掺杂分布 掺杂型材
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公开(公告)号：US20230296567A1
公开(公告)日：2023-09-21
申请号：US18322755
申请日：2023-05-24
Applicant: Infineon Technologies AG
Inventor： Rainer Markus SCHALLER , Matthias EBERL , Simon GASSNER , Franz JOST , Stefan KOLB
IPC: G01N29/24
CPC classification number: G01N29/2425 , G01N33/0004
Abstract: A photoacoustic detector unit comprises a housing having an opening, and also a photoacoustic transducer designed to convert optical radiation into at least one from a pressure signal or a heat signal. The photoacoustic transducer covers the opening of the housing, such that the photoacoustic transducer and the housing form an acoustically tight cavity. A pressure pick-up is arranged in the acoustically tight cavity.
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公开(公告)号：US20210285866A1
公开(公告)日：2021-09-16
申请号：US17336663
申请日：2021-06-02
Applicant: Infineon Technologies AG , Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V.
Inventor： Stefan KOLB , Alfons DEHE , Jochen HUBER , Franz JOST , Horst THEUSS , Wilhelm WIEDMEIER , Juergen WOELLENSTEIN
Abstract: A gas sensor includes a multi-wafer stack of a plurality of layers and a measurement chamber. The plurality of layers includes a first layer comprising a sensor element that has a microelectromechanical system (MEMS) membrane; and a second layer comprising an emitter element configured to emit electromagnetic radiation. The measurement chamber is interposed between the first layer and the second layer. The measurement chamber is configured to receive a measurement gas and further receive the electromagnetic radiation emitted by the emitter element as the electromagnetic radiation travels along a radiation path from a first end of the measurement chamber to a second end of the measurement chamber that is opposite to the first end.
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公开(公告)号：US20210181151A1
公开(公告)日：2021-06-17
申请号：US17116029
申请日：2020-12-09
Applicant: Infineon Technologies AG
Inventor： Rainer Markus SCHALLER , Jochen DANGELMAIER , Matthias EBERL , Simon GASSNER , Franz JOST , Stefan KOLB , Horst THEUSS
Abstract: A photoacoustic sensor includes a first MEMS device and a second MEMS device. The first MEMS device includes a first MEMS component including an optical emitter, and a first optically transparent cover wafer-bonded to the first MEMS component, wherein the first MEMS component and the first optically transparent cover form a first closed cavity. The second MEMS device includes a second MEMS component including a pressure detector, and a second optically transparent cover wafer-bonded to the second MEMS component, wherein the second MEMS component and the second optically transparent cover form a second closed cavity.
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Patent Agency Ranking
6.发明申请公开(公告)号：US20170067859A1
公开(公告)日：2017-03-09
申请号：US15258646
申请日：2016-09-07
Applicant: Infineon Technologies AG
Inventor： Stefan KOLB , Alfons DEHE , Jochen HUBER , Franz JOST , Horst THEUSS , Juergen WOELLENSTEIN
CPC classification number: G01N29/30 , G01N29/2418 , G01N2291/021
Abstract: An apparatus for in-situ calibration of a photoacoustic sensor is provided. The apparatus includes a light emitter to emit light along a transmission path to a gas and an acoustic sensor element configured to detect an acoustic signal emitted from the gas based on the received light. Furthermore, the apparatus includes a sensing unit configured to detect the light transmitted along the transmission path and to provide an output signal, and a calibration unit to receive the output signal from the sensing unit and to provide a calibration information based on the output signal received from the sensing unit.
Abstract translation: 提供了一种用于光声传感器的原位校准的装置。 该装置包括：发光体，沿着沿气体的传输路径发光;以及声传感器元件，被配置为基于接收的光检测从气体发出的声信号。 此外，该装置包括：感测单元，被配置为检测沿着传输路径传输的光并提供输出信号，以及校准单元，用于接收来自感测单元的输出信号，并且基于接收的输出信号提供校准信息 从感测单元。
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公开(公告)号：US20220074897A1
公开(公告)日：2022-03-10
申请号：US17446507
申请日：2021-08-31
Applicant: Infineon Technologies AG
Inventor： Matthias EBERL , Franz JOST , Stefan KOLB
IPC: G01N29/24 , G01N29/024
Abstract: A gas sensor having a heater, a receiver, and a space arranged between the heater and the receiver, is described, the heater being configured to generate a thermoacoustic sound wave propagating through the space by using a stimulation signal. The receiver is in this case configured to receive the thermoacoustic sound wave that has propagated through the space and to convert it into a reception signal that has a time-of-flight-dependent shift with respect to the stimulation signal and therefore information relating to the gas concentration in the space.
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公开(公告)号：US20210181158A1
公开(公告)日：2021-06-17
申请号：US17247134
申请日：2020-12-01
Applicant: Infineon Technologies AG
Inventor： Rainer Markus SCHALLER , Matthias EBERL , Simon GASSNER , Franz JOST , Stefan KOLB
IPC: G01N29/24
Abstract: A photoacoustic detector unit comprises a housing having an opening, and also a photoacoustic transducer designed to convert optical radiation into at least one from a pressure signal or a heat signal. The photoacoustic transducer covers the opening of the housing, such that the photoacoustic transducer and the housing form an acoustically tight cavity. A pressure pick-up is arranged in the acoustically tight cavity.
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公开(公告)号：US20170317271A1
公开(公告)日：2017-11-02
申请号：US15652579
申请日：2017-07-18
Applicant: Infineon Technologies AG
Inventor： Markus ECKINGER , Stefan KOLB
CPC classification number: H01L43/04 , G01R33/0052 , G01R33/07 , H01L43/065 , H01L43/14
Abstract: Methods for doping an active Hall effect region of a Hall effect device in a semiconductor substrate, and Hall effect devices having a doped active Hall effect region are provided. A method includes forming a first doping profile of a first doping type in a first depth region of the active Hall effect region by means of a first implantation with a first implantation energy level, forming a second doping profile of the first doping type in a second depth region of the active Hall effect region by means of a second implantation with a second implantation energy level, and forming an overall doping profile of the active Hall effect region by annealing the semiconductor substrate with the active Hall effect region having the first and the second doping profile.
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公开(公告)号：US20160060105A1
公开(公告)日：2016-03-03
申请号：US14832001
申请日：2015-08-21
Applicant: Infineon Technologies AG
Inventor： Stefan KOLB , Andreas MEISER , Till SCHLOESSER , Wolfgang WERNER
CPC classification number: B81C1/00182 , B81C2201/019
Abstract: A method for producing a MEMS device comprises forming a semiconductor layer stack, the semiconductor layer stack comprising at least a first monocrystalline semiconductor layer, a second monocrystalline semiconductor layer and a third monocrystalline semiconductor layer, the second monocrystalline semiconductor layer formed between the first and third monocrystalline semiconductor layers. A semiconductor material of the second monocrystalline semiconductor layer is different from semiconductor materials of the first and third monocrystalline semiconductor layers. After forming the semiconductor layer stack, at least a portion of each of the first and third monocrystalline semiconductor layers is concurrently etched.
Abstract translation: 一种用于制造MEMS器件的方法包括形成半导体层堆叠，所述半导体层堆叠包括至少第一单晶半导体层，第二单晶半导体层和第三单晶半导体层，所述第二单晶半导体层形成在第一和第三 单晶半导体层。 第二单晶半导体层的半导体材料与第一和第三单晶半导体层的半导体材料不同。 在形成半导体层堆叠之后，同时蚀刻第一和第三单晶半导体层中的每一个的至少一部分。
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