公开(公告)号：US3760297A

公开(公告)日：1973-09-18

申请号：US3760297D

申请日：1972-01-20

Applicant: INT STANDARD ELECTRIC CORP

Inventor： THOMPSON G

IPC: G02B6/42 ,  H01S5/026 ,  H01S5/10 ,  H01S3/02

CPC classification number: H01S5/1071 ,  G02B6/4206 ,  G02B6/4287 ,  H01S5/026

Abstract: An optical fiber is coupled along an edge of a rectangular GaAs injection laser. A circulatory mode of light reflection is established between the four side walls of the laser at an angle of incidence which provides a narrow rectangular strip of light. The fiber is positioned transversely at one reflection point or corner of the light path. A narrow rectangular metal strip contact on one face of the laser confines current to the desired path. A reflective coating on an end of the fiber may provide a unidirectional optical source. Other variations include an optical amplifier for a light input source and an optical coupler from an input fiber to an output fiber.

Abstract translation: 沿着矩形GaAs注入激光器的边缘耦合光纤。 在激光的四个侧壁之间以入射角建立光反射的循环模式，其提供窄的矩形条带。 纤维横向定位在光路的一个反射点或拐角处。 在激光器的一个面上的窄矩形金属带接触将电流限制到所需的路径。 光纤端部上的反射涂层可以提供单向光源。 其他变型包括用于光输入源的光放大器和从输入光纤到输出光纤的光耦合器。

公开(公告)号：US3803511A

公开(公告)日：1974-04-09

申请号：US29867972

申请日：1972-10-18

Applicant: INT STANDARD ELECTRIC CORP

Inventor： THOMPSON G

IPC: G02B6/30 ,  G02B6/42 ,  H01S5/10 ,  H01S5/14 ,  H01S3/02

CPC classification number: H01S5/1071 ,  G02B6/30 ,  G02B6/42 ,  G02B6/4206 ,  G02B6/421 ,  H01S5/14 ,  H01S5/146

Abstract: The coupling of an injection laser diode into an optical fiber is improved by a short resonating length of fiber. A partially reflective layer is positioned at the remote end of the resonator section and a highly reflective layer with an aperture slit and anti-reflection layer in the slit are disposed at the laser end. A circulatory laser mode can also be improved using a resonator section with a matching interference layer at the coupling point. A rectangular contact strip confines current to the desired circulating area. Another variation includes two different coupling points with one more tightly coupled than the other for circulating light in one direction.

公开(公告)号：US3780358A

公开(公告)日：1973-12-18

申请号：US18484071

申请日：1971-09-29

Applicant: INT STANDARD ELECTRIC CORP

Inventor： THOMPSON G

IPC: H01L33/24 ,  H01S5/20 ,  H01S5/223 ,  H01S5/30 ,  H01S3/19

CPC classification number: H01L33/24 ,  H01S5/20 ,  H01S5/2059 ,  H01S5/2232 ,  H01S5/2234 ,  H01S5/2237 ,  H01S5/30 ,  Y10S148/049 ,  Y10S148/05 ,  Y10S148/065 ,  Y10S148/067 ,  Y10S148/072 ,  Y10S148/145 ,  Y10S438/965

Abstract: A semiconductor injection laser device is provided with a narrow junction structure between layers of GaAs and GaAlAs which confines current flow and optical energy to minimize losses. Particular doping and layer growing techniques provide a central strip or ridge in the p-n junction extending between the end faces of the two layers. In one variation the junction crosses an intermediate GaAs layer between two outer GaA1As layers.

Abstract translation: 半导体注入激光器件在GaAs和GaAlAs层之间设置有窄结结构，其限制电流和光能以最小化损耗。 特定的掺杂和层生长技术在p-n结中提供了在两层的端面之间延伸的中心带或脊。 在一个变化中，该结跨越两个外部GaAlAs层之间的中间GaAs层。