公开(公告)号：US20150270428A1

公开(公告)日：2015-09-24

申请号：US14729984

申请日：2015-06-03

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： AHMED ABOU-KANDIL ,  AUGUSTIN J. HONG ,  JEEHWAN KIM ,  MOHAMED SAAD ,  DEVENDRA K. SADANA

IPC: H01L31/075 ,  H01L31/0376 ,  H01L31/0224

CPC classification number: H01L31/075 ,  H01L31/022475 ,  H01L31/022483 ,  H01L31/03767 ,  H01L31/202 ,  H01L31/204 ,  Y02E10/548 ,  Y02P70/521

Abstract: A device and method for reducing degradation in a photovoltaic device includes adjusting a band offset of the device during one or more of forming an electrode, forming a first doped layer or forming an intrinsic layer. The adjusting reduces a band offset between one or more of the electrode, the first doped layer and the intrinsic layer to reduce light-induced degradation of the device. A second doped layer is formed on the intrinsic layer.

Abstract translation: 用于降低光伏器件劣化的器件和方法包括在形成电极，形成第一掺杂层或形成本征层的一个或多个期间调整器件的带偏移。 该调整减小了电极，第一掺杂层和本征层中的一个或多个之间的带偏移，以减少光诱导的器件劣化。 在本征层上形成第二掺杂层。

公开(公告)号：US20150228833A1

公开(公告)日：2015-08-13

申请号：US14697250

申请日：2015-04-27

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： AHMED ABOU-KANDIL ,  KEITH E. FOGEL ,  AUGUSTIN J. HONG ,  JEEHWAN KIM ,  MOHAMED SAAD ,  DEVENDRA K. SADANA

IPC: H01L31/075 ,  H01L31/0288 ,  H01L31/0224

CPC classification number: H01L31/075 ,  H01L27/14692 ,  H01L31/022466 ,  H01L31/022475 ,  H01L31/022483 ,  H01L31/0288 ,  H01L31/202 ,  Y02E10/548 ,  Y02P70/521

Abstract: A photovoltaic device includes a p-type layer. An intrinsic layer is formed directly on the p-type layer and includes an interface region extending into the intrinsic layer that includes a gradually decreasing band gap energy going from the p-type layer into the intrinsic layer formed by a graded deposition temperature. An n-type layer is formed directly on the intrinsic layer.

Abstract translation: 光伏器件包括p型层。 本征层直接形成在p型层上，并且包括延伸到本征层的界面区域，该界面区域包括从p型层逐渐减小的带隙能量到通过梯度沉积温度形成的本征层。 n型层直接形成在本征层上。