公开(公告)号：US20140356981A1

公开(公告)日：2014-12-04

申请号：US13903198

申请日：2013-05-28

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Alex R. HUBBARD ,  Douglas C. LA TULIPE, JR. ,  Spyridon SKORDAS ,  Kevin R. WINSTEL

IPC: H01L21/66 ,  H01L23/00

CPC classification number: H01L22/12 ,  H01L23/544 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/80 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L24/94 ,  H01L25/0657 ,  H01L2223/54426 ,  H01L2224/0401 ,  H01L2224/08145 ,  H01L2224/131 ,  H01L2224/16145 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/8013 ,  H01L2224/80896 ,  H01L2224/80908 ,  H01L2224/8113 ,  H01L2224/81908 ,  H01L2224/8313 ,  H01L2224/83908 ,  H01L2224/9202 ,  H01L2224/94 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/3511 ,  H01L2224/80 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2924/014

Abstract: A method for wafer bonding includes measuring grid distortion for a mated pairing of wafers to be bonded to determine if misalignment exists between the wafers. During processing of subsequent wafers, magnification of one or more lithographic patterns is adjusted to account for the misalignment. The subsequent wafers are bonded with reduced misalignment.

Abstract translation: 用于晶片接合的方法包括测量待接合的晶片的配对配对的栅格畸变，以确定晶片之间是否存在偏差。 在后续晶片的处理期间，调整一个或多个光刻图案的放大率以解决未对准。 随后的晶片以缩小的未对准结合。