公开(公告)号：US08951811B2

公开(公告)日：2015-02-10

申请号：US13970764

申请日：2013-08-20

Applicant: International Business Machines Corporation

Inventor： Michael C. Gaidis ,  Alexander J. Gaidis

IPC: H01L43/12 ,  H01L43/08 ,  B82Y99/00

CPC classification number: H01L43/12 ,  B82Y10/00 ,  B82Y99/00 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  G11C19/0808 ,  H01F1/0072 ,  H01F10/3263 ,  H01L29/0673 ,  H01L43/08

Abstract: A memory device includes a first nanowire, a second nanowire and a magnetic tunnel junction device coupling the first and second nanowires.

Abstract translation: 存储器件包括耦合第一和第二纳米线的第一纳米线，第二纳米线和磁性隧道结器件。

公开(公告)号：US20140141530A1

公开(公告)日：2014-05-22

申请号：US13970764

申请日：2013-08-20

Applicant: International Business Machines Corporation

Inventor： Michael C. Gaidis ,  Alexander J. Gaidis

IPC: H01L43/12

CPC classification number: H01L43/12 ,  B82Y10/00 ,  B82Y99/00 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  G11C19/0808 ,  H01F1/0072 ,  H01F10/3263 ,  H01L29/0673 ,  H01L43/08

Abstract: A memory device includes a first nanowire, a second nanowire and a magnetic tunnel junction device coupling the first and second nanowires.

Abstract translation: 存储器件包括耦合第一和第二纳米线的第一纳米线，第二纳米线和磁性隧道结器件。

公开(公告)号：US08772889B2

公开(公告)日：2014-07-08

申请号：US13682063

申请日：2012-11-20

Applicant: International Business Machines Corporation

Inventor： Michael C. Gaidis ,  Alexander J. Gaidis

IPC: H01L29/82

CPC classification number: H01L43/12 ,  B82Y10/00 ,  B82Y99/00 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  G11C19/0808 ,  H01F1/0072 ,  H01F10/3263 ,  H01L29/0673 ,  H01L43/08

Abstract: A memory device includes a first nanowire, a second nanowire and a magnetic tunnel junction device coupling the first and second nanowires.

Abstract translation: 存储器件包括耦合第一和第二纳米线的第一纳米线，第二纳米线和磁性隧道结器件。

公开(公告)号：US20140138610A1

公开(公告)日：2014-05-22

申请号：US13682063

申请日：2012-11-20

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Michael C. Gaidis ,  Alexander J. Gaidis

IPC: H01L43/00 ,  H01L43/12

CPC classification number: H01L43/12 ,  B82Y10/00 ,  B82Y99/00 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  G11C19/0808 ,  H01F1/0072 ,  H01F10/3263 ,  H01L29/0673 ,  H01L43/08

Abstract: A memory device includes a first nanowire, a second nanowire and a magnetic tunnel junction device coupling the first and second nanowires.