COMPACT MODEL FOR DEVICE/CIRCUIT/CHIP LEAKAGE CURRENT (IDDQ) CALCULATION INCLUDING PROCESS INDUCED UPLIFT FACTORS
    1.
    发明申请
    COMPACT MODEL FOR DEVICE/CIRCUIT/CHIP LEAKAGE CURRENT (IDDQ) CALCULATION INCLUDING PROCESS INDUCED UPLIFT FACTORS 有权
    用于器件/电路/芯片泄漏电流(IDDQ)的紧凑型模型包括工艺引起的升级因素

    公开(公告)号:US20140123097A1

    公开(公告)日:2014-05-01

    申请号:US14148234

    申请日:2014-01-06

    Abstract: A system, method and computer program product for implementing a quiescent current leakage specific model into semiconductor device design and circuit design flows. The leakage model covers all device geometries with wide temperature and voltage ranges and, without the need for stacking factor calculations nor spread sheet based IDDQ calculations. The leakage model for IDDQ calculation incorporates further parasitic and proximity effects. The leakage model implements leakage calculations at different levels of testing, e.g., from a single device to a full chip design, and are integrated within one single model. The leakage model implements leakage calculations at different levels of testing with the leverage of a single switch setting. The implementation is via a hardware definition language code or object oriented code that can be compiled and operated using a netlist of interest, e.g., for conducting a performance analysis.

    Abstract translation: 一种用于将静态电流泄漏特定模型实现为半导体器件设计和电路设计流程的系统,方法和计算机程序产品。 泄漏模型涵盖宽温度和电压范围的所有器件几何,并且不需要堆叠因子计算,也不需要基于平板的IDDQ计算。 IDDQ计算的泄漏模型包含进一步的寄生和邻近效应。 泄漏模型在不同的测试水平下实施泄漏计算,例如从单个设备到全芯片设计,并且集成在一个单一的模型中。 泄漏模型通过单个开关设置的杠杆来实现不同测试级别的泄漏计算。 该实现是通过硬件定义语言代码或面向对象的代码,其可以使用感兴趣的网表来编译和操作,例如用于进行性能分析。

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