公开(公告)号：US20040061172A1

公开(公告)日：2004-04-01

申请号：US10262190

申请日：2002-10-01

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： Toshiharu Furukawa ,  Jack A. Mandelman ,  Byeongju Park

IPC分类号： H01L027/12

CPC分类号： H01L29/785 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/4908 ,  H01L29/66795 ,  H01L29/78621 ,  H01L29/78636

摘要： A multi-mesa FET structure with doped sidewalls for source/drain regions and methods for forming the same are disclosed. The exposure of the source and drain sidewalls during the manufacture enables uniform doping of the entire sidewalls especially when geometry-independent doping methods, such as gas phase doping or plasma doping, is used. The resulting device has depth independent and precisely controlled threshold voltage and current density and can have very high current per unit area of silicon as the mesas can be very high compared with mesas that could be formed in prior arts. Methods of providing multi-mesa FET structures are provided which employ either a damascene gate process or a damascene replacement gate process instead of conventional subtractive etching methods.

摘要翻译： 公开了具有用于源极/漏极区域的掺杂侧壁的多台面FET结构及其形成方法。 在制造期间，源极和漏极侧壁的曝光使得能够均匀地掺杂整个侧壁，特别是当使用几何不依赖的掺杂方法（例如气相掺杂或等离子体掺杂）时。 所得到的器件具有深度独立和精确控制的阈值电压和电流密度，并且由于台面与现有技术中可能形成的台面相比可以非常高，所以每单位面积的硅可以具有非常高的电流。 提供了提供多台面FET结构的方法，其采用镶嵌栅极工艺或镶嵌栅极替代栅极工艺，而不是常规的减去蚀刻方法。

公开(公告)号：US20020106857A1

公开(公告)日：2002-08-08

申请号：US09777445

申请日：2001-02-06

申请人： International Business Machines Corporation

发明人： Rajarao Jammy ,  Irene McStay ,  Byeongju Park ,  Ravikumar Ramachandran ,  Joseph F. Shepard JR. ,  Helmut Tews

IPC分类号： H01L021/8242 ,  H01L021/20

CPC分类号： H01L27/1087

摘要： A method and structure for a fabricating roughened surface walls of a capacitor, such as a deep trench capacitor. The invention starts with a silicon surface and forms silicon germanium grains on the silicon surface. A portion of the silicon surface remains exposed and is etched selective to the silicon germanium grains. The silicon germanium grains are then removed from the silicon surface. The silicon surface is doped after the silicon germanium grains are removed.

摘要翻译： 用于制造诸如深沟槽电容器的电容器的粗糙表面壁的方法和结构。 本发明从硅表面开始并在硅表面上形成硅锗晶粒。 硅表面的一部分保持暴露，并且被选择性地蚀刻到硅锗晶粒上。 然后从硅表面除去硅锗晶粒。 去除硅锗晶粒后，硅表面被掺杂。