Array foreshortening measurement using a critical dimension scanning electron microscope
    1.
    发明申请
    Array foreshortening measurement using a critical dimension scanning electron microscope 失效
    使用临界尺寸扫描电子显微镜进行阵列缩小测量

    公开(公告)号:US20020185598A1

    公开(公告)日:2002-12-12

    申请号:US09878580

    申请日:2001-06-11

    CPC classification number: G03F7/70625 G01B15/04 H01J2237/2814

    Abstract: A method and system for measuring lithographic image foreshortening. The method comprises the steps of providing a critical dimension scanning electron microscope, and using that critical dimension scanning electron microscope to measure lithographic image foreshortening. Preferably, a defined feature is formed using a lithographic process, and the critical dimension scanning electron microscope is used to measure foreshortening of that feature. For example, the feature may be a line, and the critical dimension scanning electron microscope may be used to measure foreshortening of the line. Also, the feature may be two arrays of lines, and the critical dimension scanning electron microscope may be used to measure the separation distance between the arrays. That separation distance may be used to determine a focus of the lithographic process.

    Abstract translation: 用于测量平版印刷图像缩小的方法和系统。 该方法包括提供临界尺寸扫描电子显微镜,并使用临界尺寸扫描电子显微镜测量平版印刷图像缩小。 优选地,使用光刻工艺形成限定的特征,并且使用临界尺寸扫描电子显微镜来测量该特征的缩短。 例如,该特征可以是线,并且临界尺寸扫描电子显微镜可以用于测量线的缩短。 此外,该特征可以是两个线阵列,并且临界尺寸扫描电子显微镜可以用于测量阵列之间的间隔距离。 该分离距离可用于确定光刻工艺的焦点。

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