公开(公告)号：US20030196679A1

公开(公告)日：2003-10-23

申请号：US10124842

申请日：2002-04-18

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： John Michael Cotte ,  Emily E. Fisch ,  Kenneth John McCullough ,  Wayne Martin Moreau ,  Harald Okorn-Schmidt ,  Keith R. Pope ,  John P. Simons ,  William A. Syverson ,  Charles J. Taft

IPC: B08B003/12

CPC classification number: B08B3/12 ,  B08B7/0021 ,  B81C1/00841 ,  B81C2201/117 ,  H01L21/67017

Abstract: A process and apparatus for the processing of a precision surface. The process and apparatus includes contacting of a precision surface in a process chamber with liquid or supercritical carbon dioxide in which sonic waves are generated.

Abstract translation: 用于加工精密表面的工艺和设备。 该方法和装置包括将处理室中的精密表面与产生声波的液体或超临界二氧化碳接触。

公开(公告)号：US20040009408A1

公开(公告)日：2004-01-15

申请号：US10064401

申请日：2002-07-10

Applicant: International Business Machines Corporation

Inventor： Emily E. Fisch ,  Louis M. Kindt ,  James P. Levin ,  Michael R. Schmidt ,  Carey T. Williams

IPC: G03F001/08

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  G03F1/24 ,  G03F1/72

Abstract: An extreme ultraviolet lithography (EUVL) mask structure and associated method of formation. A first conductive layer is provided between a buffer layer and an absorber layer such that the buffer layer is on a multilayer stack. The multilayer stack is adapted to substantially reflect EUV radiation incident thereon. The absorber layer is adapted to absorb essentially all of EUV radiation incident thereon. A mask pattern is formed in the absorber layer. Formation of the mask pattern in the absorber layer is accompanied by inadvertent formation of a defect in the absorber layer. The defect is subsequently repaired. The mask pattern may be extended into the first conductive layer and into the buffer layer in a substantially defect-free process that exposes a portion of the multilayer stack. A second conductive layer may be provided on the absorber layer, wherein the mask pattern is also formed in the second conductive layer.

Abstract translation: 极紫外光刻（EUVL）掩模结构及相关的形成方法。 在缓冲层和吸收层之间提供第一导电层，使得缓冲层位于多层叠层上。 多层堆叠适于基本上反射入射在其上的EUV辐射。 吸收层适于吸收入射在其上的基本上所有的EUV辐射。 在吸收层中形成掩模图案。 在吸收层中形成掩模图案伴随着在吸收层中无意中形成缺陷。 该缺陷随后被修复。 掩模图案可以在露出多层堆叠的一部分的基本上无缺陷的工艺中延伸到第一导电层中并进入缓冲层。 可以在吸收层上提供第二导电层，其中掩模图案也形成在第二导电层中。

公开(公告)号：US20020185598A1

公开(公告)日：2002-12-12

申请号：US09878580

申请日：2001-06-11

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Reginald R. Bowley JR. ,  Emily E. Fisch ,  Debra L. Meunier

IPC: H01J037/28

CPC classification number: G03F7/70625 ,  G01B15/04 ,  H01J2237/2814

Abstract: A method and system for measuring lithographic image foreshortening. The method comprises the steps of providing a critical dimension scanning electron microscope, and using that critical dimension scanning electron microscope to measure lithographic image foreshortening. Preferably, a defined feature is formed using a lithographic process, and the critical dimension scanning electron microscope is used to measure foreshortening of that feature. For example, the feature may be a line, and the critical dimension scanning electron microscope may be used to measure foreshortening of the line. Also, the feature may be two arrays of lines, and the critical dimension scanning electron microscope may be used to measure the separation distance between the arrays. That separation distance may be used to determine a focus of the lithographic process.

Abstract translation: 用于测量平版印刷图像缩小的方法和系统。 该方法包括提供临界尺寸扫描电子显微镜，并使用临界尺寸扫描电子显微镜测量平版印刷图像缩小。 优选地，使用光刻工艺形成限定的特征，并且使用临界尺寸扫描电子显微镜来测量该特征的缩短。 例如，该特征可以是线，并且临界尺寸扫描电子显微镜可以用于测量线的缩短。 此外，该特征可以是两个线阵列，并且临界尺寸扫描电子显微镜可以用于测量阵列之间的间隔距离。 该分离距离可用于确定光刻工艺的焦点。