公开(公告)号：US20020068431A1

公开(公告)日：2002-06-06

申请号：US10034862

申请日：2001-12-28

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： Kevin S. Petrarca ,  Donald Canaperi ,  Mahadevaiyer Krishnan ,  Kenneth Jay Stein ,  Richard P. Volant

IPC分类号： H01L021/4763

CPC分类号： H01L21/76849 ,  H01L21/76834 ,  H01L21/7684 ,  H01L28/60

摘要： A method is described for fabricating an encapsulated metal structure in a feature formed in a substrate. The sidewalls and bottom of the feature are covered by a barrier layer and the feature is filled with metal, preferably by electroplating. A recess is formed in the metal, and an additional barrier layer is deposited, covering the top surface of the metal and contacting the first barrier layer. The additional barrier layer is planarized, preferably by chemical-mechanical polishing. The method may be used in fabricating a MIM capacitor, with the encapsulated metal structure serving as the lower plate of the capacitor. A second substrate layer is deposited on the top surface of the substrate, with an opening overlying the encapsulated metal structure. A dielectric layer is deposited in the opening, covering the encapsulated metal structure at the bottom thereof. An additional layer, serving as the upper plate of the capacitor, is deposited to cover the dielectric layer and to fill the opening. The dielectric layer and the additional layer are planarized, preferably by CMP.