公开(公告)号：US20020111010A1

公开(公告)日：2002-08-15

申请号：US09781121

申请日：2001-02-09

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： George F. Walker ,  Ronald D. Goldblatt ,  Peter A. Gruber ,  Raymond R. Horton ,  Kevin S. Petrarca ,  Richard P. Volant ,  Tien-Jen Cheng

IPC: H01L021/44

CPC classification number: H01L24/48 ,  H01L21/76865 ,  H01L21/76873 ,  H01L21/76879 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/45 ,  H01L24/85 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/04073 ,  H01L2224/05083 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05169 ,  H01L2224/05181 ,  H01L2224/05556 ,  H01L2224/05572 ,  H01L2224/05644 ,  H01L2224/05664 ,  H01L2224/05669 ,  H01L2224/11912 ,  H01L2224/13022 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/13116 ,  H01L2224/16 ,  H01L2224/45144 ,  H01L2224/48453 ,  H01L2224/48463 ,  H01L2224/48644 ,  H01L2224/48664 ,  H01L2224/48669 ,  H01L2224/85201 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2224/85207 ,  H01L2924/0001 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/14 ,  H01L2924/30105 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2224/05552 ,  H01L2924/00015 ,  H01L2924/00012

Abstract: A process is described for forming a common input-output (I/O) site that is suitable for both wire-bond and solder bump flip chip connections, such as controlled-collapse chip connections (C4). The present invention is particularly suited to semiconductor chips that use copper as the interconnection material, in which the soft dielectrics used in manufacturing such chips are susceptible to damage due to bonding forces. The present invention reduces the risk of damage by providing site having a noble metal on the top surface of the pad, while providing a diffusion barrier to maintain the high conductivity of the metal interconnects. Process steps for forming an I/O site within a substrate are reduced by providing a method for selectively depositing metal layers in a feature formed in the substrate. Since the I/O sites of the present invention may be used for either wire-bond or solder bump connections, this provides increased flexibility for chip interconnection options, while also reducing process costs.

Abstract translation: 描述了用于形成适用于引线键合和焊料凸块倒装芯片连接（例如受控崩溃芯片连接（C4））的公共输入 - 输出（I / O）站点的过程。 本发明特别适用于使用铜作为互连材料的半导体芯片，其中用于制造这种芯片的软电介质容易受到结合力的损害。 本发明通过在衬垫的顶表面上提供具有贵金属的部位同时提供扩散阻挡层来保持金属互连的高导电性来降低损坏的风险。 通过提供一种在衬底中形成的特征中选择性地沉积金属层的方法来减少在衬底内形成I / O部位的工艺步骤。 由于本发明的I / O站点可以用于引线键合或焊料凸块连接，这为芯片互连选项提供了增加的灵活性，同时也降低了工艺成本。

公开(公告)号：US20020068431A1

公开(公告)日：2002-06-06

申请号：US10034862

申请日：2001-12-28

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Kevin S. Petrarca ,  Donald Canaperi ,  Mahadevaiyer Krishnan ,  Kenneth Jay Stein ,  Richard P. Volant

IPC: H01L021/4763

CPC classification number: H01L21/76849 ,  H01L21/76834 ,  H01L21/7684 ,  H01L28/60

Abstract: A method is described for fabricating an encapsulated metal structure in a feature formed in a substrate. The sidewalls and bottom of the feature are covered by a barrier layer and the feature is filled with metal, preferably by electroplating. A recess is formed in the metal, and an additional barrier layer is deposited, covering the top surface of the metal and contacting the first barrier layer. The additional barrier layer is planarized, preferably by chemical-mechanical polishing. The method may be used in fabricating a MIM capacitor, with the encapsulated metal structure serving as the lower plate of the capacitor. A second substrate layer is deposited on the top surface of the substrate, with an opening overlying the encapsulated metal structure. A dielectric layer is deposited in the opening, covering the encapsulated metal structure at the bottom thereof. An additional layer, serving as the upper plate of the capacitor, is deposited to cover the dielectric layer and to fill the opening. The dielectric layer and the additional layer are planarized, preferably by CMP.

公开(公告)号：US20040113235A1

公开(公告)日：2004-06-17

申请号：US10319724

申请日：2002-12-13

Applicant: International Business Machines Corporation

Inventor： Douglas D. Coolbaugh ,  John M. Cotte ,  Ebenezer E. Eshun ,  Kenneth J. Stein ,  Kunal Vaed ,  Richard P. Volant

IPC: H01L029/00 ,  H01L021/20

CPC classification number: H01L28/90 ,  H01L21/02178 ,  H01L21/02183 ,  H01L21/022 ,  H01L21/02258 ,  H01L21/0228 ,  H01L21/31604 ,  H01L21/76807 ,  H01L21/76831 ,  H01L28/40 ,  H01L28/86

Abstract: The invention is directed to unique high-surface area BEOL capacitor structures with high-k dielectric layers and methods for fabricating the same. These high-surface area BEOL capacitor structures may be used in analog and mixed signal applications. The capacitor is formed within a trench with pedestals within the trench to provide additional surface area. The top and bottom electrodes are created using damascene integration scheme. The dielectric layer is created as a multilayer dielectric film comprising for instance Al2O3, Al2O3/Ta2O5, Al2O3/Ta2O5/Al2O3 and the like. The dielectric layer may be deposited by methods like atomic layer deposition or chemical vapor deposition. The dielectric layer used in the capacitor may also be produced by anodic oxidation of a metallic precursor to yield a high dielectric constant oxide layer.

Abstract translation: 本发明涉及具有高k电介质层的独特的高表面积BEOL电容器结构及其制造方法。 这些高表面积BEOL电容器结构可用于模拟和混合信号应用。 电容器形成在具有沟槽内的基座的沟槽内，以提供额外的表面积。 顶部和底部电极使用大马士革集成方案创建。 电介质层被形成为包括例如Al 2 O 3，Al 2 O 3 / Ta 2 O 5，Al 2 O 3 / Ta 2 O 5 / Al 2 O 3等的多层电介质膜。 电介质层可以通过诸如原子层沉积或化学气相沉积的方法沉积。 电容器中使用的电介质层也可以通过金属前体的阳极氧化产生高介电常数氧化物层。

公开(公告)号：US20030059992A1

公开(公告)日：2003-03-27

申请号：US09961009

申请日：2001-09-21

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： John M. Cotte ,  Kenneth J. Stein ,  Seshadri Subbanna ,  Richard P. Volant

IPC: H01L021/337

CPC classification number: H01L28/24 ,  H01C17/262

Abstract: A method of improving the tolerance of a back-end-of-the-line (BEOL) thin film resistor is provided. Specifically, the method of the present invention includes an anodization step which is capable of converting a portion of base resistor film into an anodized region. The anodized resistor thus formed has a sheet resistivity that is higher than that of the base resistor film.

Abstract translation: 提供了一种改进后端（BEOL）薄膜电阻的公差的方法。 具体地，本发明的方法包括能够将基极电阻膜的一部分转变为阳极氧化区域的阳极氧化步骤。 如此形成的阳极氧化电阻的电阻率比基极电阻膜高。

公开(公告)号：US20040164825A1

公开(公告)日：2004-08-26

申请号：US10248876

申请日：2003-02-26

Applicant: International Business Machines Corporation

Inventor： Richard P. Volant ,  John E. Florkey ,  Robert A. Groves

IPC: H01H051/22

CPC classification number: H03K17/965 ,  H01F7/066 ,  H01F7/14 ,  H01F2007/068 ,  H01H59/0009

Abstract: A micro-electromechanical (MEM) switch capable of inductively coupling and decoupling electrical signals is described. The inductive MEM switch consists of a first plurality of coils on a moveable platform and a second plurality of coils on a stationary platform or substrate, the coils on the moveable platform being above or below those in the stationary substrate. Coupling and decoupling occurs by rotating or by laterally displacing the coils of the moveable platform with respect to the coils on the stationary substrate. Diverse arrangements of coils respectively on the moveable and stationary substrates allow for a multi-pole and multi-position switching configurations. The MEM switches described eliminate problems of stiction, arcing and welding of the switch contacts. The MEMS switches of the invention can be fabricated using standard CMOS techniques.

Abstract translation: 描述了能够感应耦合和去耦电信号的微机电（MEM）开关。 电感式MEM开关由可移动平台上的第一组多个线圈和固定平台或基板上的第二组线圈构成，可移动平台上的线圈高于或低于固定基板中的线圈。 通过旋转或相对于固定基板上的线圈横向移动可移动平台的线圈而发生耦合和去耦。 分别在可移动和固定基板上的线圈的不同布置允许多极和多位置的开关配置。 所描述的MEM开关消除了开关触点的静电，电弧和焊接的问题。 本发明的MEMS开关可以使用标准CMOS技术制造。

公开(公告)号：US20030178635A1

公开(公告)日：2003-09-25

申请号：US10104972

申请日：2002-03-21

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Richard P. Volant ,  Robert A. Groves ,  Kevin S. Petrarca ,  David M. Rockwell ,  Kenneth J. Stein

IPC: H01L029/74

CPC classification number: H01H59/0009 ,  B81B3/0021 ,  B81B2201/018 ,  B81B2203/058 ,  B81B2207/015 ,  B81C1/00214 ,  H01H2001/0068 ,  H01H2059/0054

Abstract: A semiconductor torsional micro-electromechanical (MEM) switch is described having a conductive movable control electrode; an insulated semiconductor torsion beam attached to the movable control electrode, the insulated torsion beam and the movable control electrode being parallel to each other; and a movable contact attached to the insulated torsion beam, wherein the combination of the insulated torsion beam and the control electrode is perpendicular to the movable contact. The torsional MEM switch is characterized by having its control electrodes substantially perpendicular to the switching electrodes. The MEM switch may also include multiple controls to activate the device to form a single-pole, single-throw switch or a multiple-pole, multiple-throw switch. The method of fabricating the torsional MEM switch is fully compatible with the CMOS manufacturing process.

Abstract translation: 描述了具有导电可移动控制电极的半导体扭转微机电（MEM）开关; 连接到可移动控制电极的绝缘半导体扭转梁，绝缘扭转梁和可移动控制电极彼此平行; 以及连接到所述绝缘扭力梁的可动触头，其中所述绝缘扭转梁和所述控制电极的组合垂直于所述可动触头。 扭转MEM开关的特征在于其控制电极基本上垂直于开关电极。 MEM开关还可以包括多个控制以激活该装置以形成单极单掷开关或多极多掷开关。 制造扭转MEM开关的方法与CMOS制造工艺完全兼容。

公开(公告)号：US20030089962A1

公开(公告)日：2003-05-15

申请号：US09992344

申请日：2001-11-14

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： David K. Anderson ,  Tien-Jen Cheng ,  Timothy J. Dalton ,  Christopher V. Jahnes ,  Andrew Lu ,  Chandrasekhar Narayan ,  Kevin S. Petrarca ,  Richard P. Volant ,  George F. Walker

IPC: H01L021/82 ,  H01L029/00

CPC classification number: H01L23/5256 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method and structure for a fuse structure comprises an insulator layer, a plurality of fuse electrodes extending through the insulator layer to an underlying wiring layer, an electroplated fuse element connected to the electrodes, and an interface wall. The fuse element is positioned external to the insulator, with a gap juxtaposed between the insulator and the fuse element. The interface wall further comprises a first side wall, a second side wall, and an inner wall, wherein the inner wall is disposed within the gap. The fuse electrodes are diametrically opposed to one another, and the fuse element is perpendicularly disposed above the fuse electrodes. The fuse element is either electroplatted, electroless plated, or is an ultra thin fuse.

Abstract translation: 用于熔丝结构的方法和结构包括绝缘体层，穿过绝缘体层延伸到下面的布线层的多个熔丝电极，连接到电极的电镀熔丝元件和界面壁。 保险丝元件位于绝缘体的外部，并且在绝缘体和保险丝元件之间并置有间隙。 界面壁还包括第一侧壁，第二侧壁和内壁，其中内壁设置在间隙内。 熔丝电极彼此直径相对，并且熔丝元件垂直地设置在熔丝电极的上方。 保险丝元件是电镀，无电镀，或是超薄保险丝。

公开(公告)号：US20020088477A1

公开(公告)日：2002-07-11

申请号：US09755267

申请日：2001-01-05

Applicant: International Business Machines Corporation

Inventor： John Michael Cotte ,  Donald J. Delehanty ,  Kenneth John McCullough ,  Wayne Martin Moreau ,  John P. Simons ,  Charles J. Taft ,  Richard P. Volant

IPC: C23G001/00 ,  C03C023/00 ,  C23G001/02 ,  B08B009/00 ,  B08B003/00 ,  B08B003/14 ,  B08B007/00 ,  C11D001/00

CPC classification number: H01L21/02074 ,  B08B7/0021 ,  C11D1/004 ,  C11D3/2075 ,  C11D3/43 ,  C23G5/00 ,  H01L21/02065 ,  Y10S134/902

Abstract: A process of removing residual slurry resulting from chemical mechanical polishing of a workpiece in which the workpiece is contacted with a composition of a supercritical fluid, said supercritical fluid including supercritical carbon dioxide and a co-solvent, and a surfactant.

Abstract translation: 一种从工件与超临界流体的组合物，所述超临界流体包括超临界二氧化碳和共溶剂以及表面活性剂接触的工件的化学机械抛光产生的剩余浆料的除去过程。

公开(公告)号：US20040134538A1

公开(公告)日：2004-07-15

申请号：US10743155

申请日：2003-12-22

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： John Michael Cotte ,  Kenneth John McCullough ,  Wayne Martin Moreau ,  John P. Simons ,  Charles J. Taft ,  Richard P. Volant

IPC: F16K015/02

CPC classification number: F16K99/0001 ,  F15C5/00 ,  F16K15/023 ,  F16K99/0005 ,  F16K99/0007 ,  F16K99/0057 ,  F16K2099/0094 ,  Y10T137/7783 ,  Y10T137/7849 ,  Y10T137/7904

Abstract: A check valve for micro electro mechanical structure devices (MEMS), and in particular pertains to a check valve which is adapted to be employed in connection with micro electro mechanical structure devices which are intended to be employed with supercritical fluids constituting working fluids. In a preferred embodiment, the check valve is equipped with a bypass channel including a freely moveable plug structure which, in the open position of the valve enables the ingress of supercritical fluids under high superatmospheric pressures, and subsequent to the filling of the system, let down to atmospheric pressure, causes the plug to be moved into a permanent valve-closed position.

公开(公告)号：US20030148550A1

公开(公告)日：2003-08-07

申请号：US10014660

申请日：2001-11-07

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Richard P. Volant ,  John C. Bisson ,  Donna R. Cote ,  Timothy J. Dalton ,  Robert A. Groves ,  Kevin S. Petrarca ,  Kenneth J. Stein ,  Seshadri Subbanna

IPC: H01L021/00

CPC classification number: B81C1/00246 ,  B81B2201/016 ,  B81B2201/018 ,  B81B2203/0127 ,  B81B2207/07 ,  B81C1/00611 ,  B81C2201/0122 ,  B81C2203/0735 ,  H01G5/40 ,  H01H59/0009

Abstract: A method of fabricating micro-electromechanical switches (MEMS) integrated with conventional semiconductor interconnect levels, using compatible processes and materials is described. The method is based upon fabricating a capacitive switch that is easily modified to produce various configurations for contact switching and any number of metal-dielectric-metal switches. The process starts with a copper damascene interconnect layer, made of metal conductors inlaid in a dielectric. All or portions of the copper interconnects are recessed to a degree sufficient to provide a capacitive air gap when the switch is in the closed state, as well as provide space for a protective layer of, e.g., Ta/TaN. The metal structures defined within the area specified for the switch act as actuator electrodes to pull down the movable beam and provide one or more paths for the switched signal to traverse. The advantage of an air gap is that air is not subject to charge storage or trapping that can cause reliability and voltage drift problems. Instead of recessing the electrodes to provide a gap, one may just add dielectric on or around the electrode. The next layer is another dielectric layer which is deposited to the desired thickness of the gap formed between the lower electrodes and the moveable beam that forms the switching device. Vias are fabricated through this dielectric to provide connections between the metal interconnect layer and the next metal layer which will also contain the switchable beam. The via layer is then patterned and etched to provide a cavity area which contains the lower activation electrodes as well as the signal paths. The cavity is then back-filled with a sacrificial release material. This release material is then planarized with the top of the dielectric, thereby providing a planar surface upon which the beam layer is constructed.

Abstract translation: 描述了使用兼容工艺和材料制造与常规半导体互连级别集成的微机电开关（MEMS）的方法。 该方法基于制造容易修改以产生用于接触切换和任何数量的金属 - 介电金属开关的各种配置的电容开关。 该过程开始于铜镶嵌互连层，由金属导体嵌入电介质中。 铜互连的全部或部分凹陷到足以在开关处于闭合状态时提供电容气隙的程度，并为例如Ta / TaN的保护层提供空间。 在为开关指定的区域内限定的金属结构用作致动器电极以下拉可移动光束并且提供一个或多个路径用于开关信号横越。 气隙的优点是空气不会受到可能导致可靠性和电压漂移问题的电荷储存或捕集。 代替使电极凹陷以提供间隙，可以仅在电极上或周围添加电介质。 下一层是另一介质层，其被沉积到形成在下电极和形成开关器件的可移动梁之间的间隙的期望厚度上。 通过该电介质制造通孔以提供金属互连层和还包含可切换光束的下一个金属层之间的连接。 然后对通孔层进行图案化和蚀刻以提供包含下部激活电极以及信号路径的空腔区域。 然后用牺牲脱模材料填充空腔。 然后将该释放材料与电介质的顶部平坦化，由此提供构造波束层的平坦表面。