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    METHOD OF FABRICATING MICRO-ELECTROMECHANICAL SWITCHES ON CMOS COMPATIBLE SUBSTRATES
    1.
    发明申请
    METHOD OF FABRICATING MICRO-ELECTROMECHANICAL SWITCHES ON CMOS COMPATIBLE SUBSTRATES 有权
    在CMOS兼容基板上制作微电子开关的方法

    公开(公告)号：US20030148550A1

    公开(公告)日：2003-08-07

    申请号：US10014660

    申请日：2001-11-07

    申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

    发明人： Richard P. Volant ,  John C. Bisson ,  Donna R. Cote ,  Timothy J. Dalton ,  Robert A. Groves ,  Kevin S. Petrarca ,  Kenneth J. Stein ,  Seshadri Subbanna

    IPC分类号： H01L021/00

    CPC分类号： B81C1/00246 ,  B81B2201/016 ,  B81B2201/018 ,  B81B2203/0127 ,  B81B2207/07 ,  B81C1/00611 ,  B81C2201/0122 ,  B81C2203/0735 ,  H01G5/40 ,  H01H59/0009

    摘要： A method of fabricating micro-electromechanical switches (MEMS) integrated with conventional semiconductor interconnect levels, using compatible processes and materials is described. The method is based upon fabricating a capacitive switch that is easily modified to produce various configurations for contact switching and any number of metal-dielectric-metal switches. The process starts with a copper damascene interconnect layer, made of metal conductors inlaid in a dielectric. All or portions of the copper interconnects are recessed to a degree sufficient to provide a capacitive air gap when the switch is in the closed state, as well as provide space for a protective layer of, e.g., Ta/TaN. The metal structures defined within the area specified for the switch act as actuator electrodes to pull down the movable beam and provide one or more paths for the switched signal to traverse. The advantage of an air gap is that air is not subject to charge storage or trapping that can cause reliability and voltage drift problems. Instead of recessing the electrodes to provide a gap, one may just add dielectric on or around the electrode. The next layer is another dielectric layer which is deposited to the desired thickness of the gap formed between the lower electrodes and the moveable beam that forms the switching device. Vias are fabricated through this dielectric to provide connections between the metal interconnect layer and the next metal layer which will also contain the switchable beam. The via layer is then patterned and etched to provide a cavity area which contains the lower activation electrodes as well as the signal paths. The cavity is then back-filled with a sacrificial release material. This release material is then planarized with the top of the dielectric, thereby providing a planar surface upon which the beam layer is constructed.

    摘要翻译： 描述了使用兼容工艺和材料制造与常规半导体互连级别集成的微机电开关（MEMS）的方法。 该方法基于制造容易修改以产生用于接触切换和任何数量的金属 - 介电金属开关的各种配置的电容开关。 该过程开始于铜镶嵌互连层，由金属导体嵌入电介质中。 铜互连的全部或部分凹陷到足以在开关处于闭合状态时提供电容气隙的程度，并为例如Ta / TaN的保护层提供空间。 在为开关指定的区域内限定的金属结构用作致动器电极以下拉可移动光束并且提供一个或多个路径用于开关信号横越。 气隙的优点是空气不会受到可能导致可靠性和电压漂移问题的电荷储存或捕集。 代替使电极凹陷以提供间隙，可以仅在电极上或周围添加电介质。 下一层是另一介质层，其被沉积到形成在下电极和形成开关器件的可移动梁之间的间隙的期望厚度上。 通过该电介质制造通孔以提供金属互连层和还包含可切换光束的下一个金属层之间的连接。 然后对通孔层进行图案化和蚀刻以提供包含下部激活电极以及信号路径的空腔区域。 然后用牺牲脱模材料填充空腔。 然后将该释放材料与电介质的顶部平坦化，由此提供构造波束层的平坦表面。

    Encapsulated metal structures for semiconductor devices and MIM capacitors including the same
    4.
    发明申请
    Encapsulated metal structures for semiconductor devices and MIM capacitors including the same 有权

    公开(公告)号：US20020068431A1

    公开(公告)日：2002-06-06

    申请号：US10034862

    申请日：2001-12-28

    申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

    发明人： Kevin S. Petrarca ,  Donald Canaperi ,  Mahadevaiyer Krishnan ,  Kenneth Jay Stein ,  Richard P. Volant

    IPC分类号： H01L021/4763

    CPC分类号： H01L21/76849 ,  H01L21/76834 ,  H01L21/7684 ,  H01L28/60

    摘要： A method is described for fabricating an encapsulated metal structure in a feature formed in a substrate. The sidewalls and bottom of the feature are covered by a barrier layer and the feature is filled with metal, preferably by electroplating. A recess is formed in the metal, and an additional barrier layer is deposited, covering the top surface of the metal and contacting the first barrier layer. The additional barrier layer is planarized, preferably by chemical-mechanical polishing. The method may be used in fabricating a MIM capacitor, with the encapsulated metal structure serving as the lower plate of the capacitor. A second substrate layer is deposited on the top surface of the substrate, with an opening overlying the encapsulated metal structure. A dielectric layer is deposited in the opening, covering the encapsulated metal structure at the bottom thereof. An additional layer, serving as the upper plate of the capacitor, is deposited to cover the dielectric layer and to fill the opening. The dielectric layer and the additional layer are planarized, preferably by CMP.

    MEMS encapsulated structure and method of making same
    5.
    发明申请
    MEMS encapsulated structure and method of making same 有权

    公开(公告)号：US20040097003A1

    公开(公告)日：2004-05-20

    申请号：US10300520

    申请日：2002-11-20

    申请人： International Business Machines Corporation

    发明人： Joseph T. Kocis ,  James Tornello ,  Kevin S. Petrarca ,  Richard Volant ,  Seshadri Subbanna

    IPC分类号： H01L021/00 ,  H01L021/44

    CPC分类号： B81C1/00666 ,  B81B2201/014 ,  B81C2201/0167 ,  H01F2007/068 ,  H01H50/005

    摘要： A method of fabricating an encapsulated micro electro-mechanical system (MEMS) and making of same that includes forming a dielectric layer, patterning an upper surface of the dielectric layer to form a trench, forming a release material within the trench, patterning an upper surface of the release material to form another trench, forming a first encapsulating layer that includes sidewalls within the another trench, forming a core layer within the first encapsulating layer, and forming a second encapsulating layer above the core layer, where the second encapsulating layer is connected to the sidewalls of the first encapsulating layer. Alternatively, the method includes forming a multilayer MEMS structure by photomasking processes to form a first metal layer, a second layer including a dielectric layer and a second metal layer, and a third metal layer. The core layer and the encapsulating layers are made of materials with complementary electrical, mechanical and/or magnetic properties.

    Multilevel interconnect structure containing air gaps and method for making
    6.
    发明申请
    Multilevel interconnect structure containing air gaps and method for making 有权
    包含气隙的多层互连结构和制造方法

    公开(公告)号：US20020127844A1

    公开(公告)日：2002-09-12

    申请号：US10144574

    申请日：2002-05-13

    申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

    发明人： Alfred Grill ,  Jeffrey Curtis Hedrick ,  Christopher Vincent Jahnes ,  Satyanarayana Venkata Nitta ,  Kevin S. Petrarca ,  Sampath Purushothaman ,  Katherine Lynn Saenger ,  Stanley Joseph whitehair

    IPC分类号： H01L021/4763

    CPC分类号： H01L21/7682 ,  H01L21/76831 ,  H01L21/76834 ,  H01L21/76835 ,  H01L21/76885

    摘要： A method for forming a multilayer interconnect structure on a substrate that include interconnected conductive wiring and vias spaced apart by a combination of solid or gaseous dielectrics. The inventive method includes the steps of: (a) forming a first planar via plus line level pair embedded in a dielectric matrix formed from one or more solid dielectrics and comprising a via level dielectric and a line level dielectric on a substrate, wherein, at least one of said solid dielectrics is at least partially sacrificial; (b) etching back sacrificial portions of said at least partially sacrificial dielectrics are removed to leave cavities extending into and through said via level, while leaving, at least some of the original via level dielectric as a permanent dielectric under said lines; (c) partially filling or overfilling said cavities with a place-holder material which may or may not be sacrificial; (d) planarizing the structure by removing overfill of said place-holder material; (e) repeating, as necessary, steps (a)-(d); (f) forming a dielectric bridge layer over the planar structure; and (g) forming air gaps by at least partially extracting said place-holder material.

    摘要翻译： 一种在衬底上形成多层互连结构的方法，其包括互连的导电布线和通过固体或气体电介质的组合间隔开的通孔。 本发明的方法包括以下步骤：（a）形成嵌入在由一个或多个固体电介质形成的电介质矩阵中并且包括通孔层电介质和衬底上的线路电介质的介电矩阵中的第一平面通孔加线电平对，其中，在 至少一个所述固体电介质至少部分地是牺牲的; （b）蚀刻所述至少部分牺牲电介质的牺牲部分被去除以留下延伸进入并穿过所述通孔级的空腔，同时留下至少一些原始通孔级电介质作为所述线下的永久电介质; （c）用可能牺牲或可能不是牺牲的位置保持材料部分填充或过度填充所述空腔; （d）通过去除所述位置保持器材料的过量填充来平坦化结构; （e）必要时重复步骤（a） - （d）; （f）在所述平面结构上形成电介质桥接层; 和（g）通过至少部分地提取所述放置支架材料形成气隙。

    Perpendicular torsion micro-electromechanical switch
    7.
    发明申请
    Perpendicular torsion micro-electromechanical switch 失效
    垂直扭转微机电开关

    公开(公告)号：US20030178635A1

    公开(公告)日：2003-09-25

    申请号：US10104972

    申请日：2002-03-21

    申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

    发明人： Richard P. Volant ,  Robert A. Groves ,  Kevin S. Petrarca ,  David M. Rockwell ,  Kenneth J. Stein

    IPC分类号： H01L029/74

    CPC分类号： H01H59/0009 ,  B81B3/0021 ,  B81B2201/018 ,  B81B2203/058 ,  B81B2207/015 ,  B81C1/00214 ,  H01H2001/0068 ,  H01H2059/0054

    摘要： A semiconductor torsional micro-electromechanical (MEM) switch is described having a conductive movable control electrode; an insulated semiconductor torsion beam attached to the movable control electrode, the insulated torsion beam and the movable control electrode being parallel to each other; and a movable contact attached to the insulated torsion beam, wherein the combination of the insulated torsion beam and the control electrode is perpendicular to the movable contact. The torsional MEM switch is characterized by having its control electrodes substantially perpendicular to the switching electrodes. The MEM switch may also include multiple controls to activate the device to form a single-pole, single-throw switch or a multiple-pole, multiple-throw switch. The method of fabricating the torsional MEM switch is fully compatible with the CMOS manufacturing process.

    摘要翻译： 描述了具有导电可移动控制电极的半导体扭转微机电（MEM）开关; 连接到可移动控制电极的绝缘半导体扭转梁，绝缘扭转梁和可移动控制电极彼此平行; 以及连接到所述绝缘扭力梁的可动触头，其中所述绝缘扭转梁和所述控制电极的组合垂直于所述可动触头。 扭转MEM开关的特征在于其控制电极基本上垂直于开关电极。 MEM开关还可以包括多个控制以激活该装置以形成单极单掷开关或多极多掷开关。 制造扭转MEM开关的方法与CMOS制造工艺完全兼容。

    Fuse structure and method to form the same
    8.
    发明申请
    Fuse structure and method to form the same 失效
    保险丝结构和方法形成相同

    公开(公告)号：US20030089962A1

    公开(公告)日：2003-05-15

    申请号：US09992344

    申请日：2001-11-14

    申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

    发明人： David K. Anderson ,  Tien-Jen Cheng ,  Timothy J. Dalton ,  Christopher V. Jahnes ,  Andrew Lu ,  Chandrasekhar Narayan ,  Kevin S. Petrarca ,  Richard P. Volant ,  George F. Walker

    IPC分类号： H01L021/82 ,  H01L029/00

    CPC分类号： H01L23/5256 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method and structure for a fuse structure comprises an insulator layer, a plurality of fuse electrodes extending through the insulator layer to an underlying wiring layer, an electroplated fuse element connected to the electrodes, and an interface wall. The fuse element is positioned external to the insulator, with a gap juxtaposed between the insulator and the fuse element. The interface wall further comprises a first side wall, a second side wall, and an inner wall, wherein the inner wall is disposed within the gap. The fuse electrodes are diametrically opposed to one another, and the fuse element is perpendicularly disposed above the fuse electrodes. The fuse element is either electroplatted, electroless plated, or is an ultra thin fuse.

    摘要翻译： 用于熔丝结构的方法和结构包括绝缘体层，穿过绝缘体层延伸到下面的布线层的多个熔丝电极，连接到电极的电镀熔丝元件和界面壁。 保险丝元件位于绝缘体的外部，并且在绝缘体和保险丝元件之间并置有间隙。 界面壁还包括第一侧壁，第二侧壁和内壁，其中内壁设置在间隙内。 熔丝电极彼此直径相对，并且熔丝元件垂直地设置在熔丝电极的上方。 保险丝元件是电镀，无电镀，或是超薄保险丝。