公开(公告)号：US20160343564A1

公开(公告)日：2016-11-24

申请号：US14718747

申请日：2015-05-21

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Richard F. INDYK ,  Deepika PRIYADARSHINI ,  Spyridon SKORDAS ,  Edmund J. SPROGIS ,  Anthony K. STAMPER ,  Kevin R. WINSTEL

IPC: H01L21/02 ,  B32B7/12 ,  B32B3/30 ,  H01L21/683 ,  B32B3/02

CPC classification number: H01L21/02035 ,  B32B3/02 ,  B32B3/26 ,  B32B3/30 ,  B32B7/12 ,  B32B9/04 ,  B32B9/045 ,  B32B27/06 ,  B32B2250/02 ,  B32B2250/44 ,  B32B2255/20 ,  B32B2255/26 ,  B32B2457/14 ,  H01L21/02013 ,  H01L21/02021

Abstract: Edge trim processes in 3D integrated circuits and resultant structures are provided. The method includes trimming an edge of a wafer at an angle to form a sloped sidewall. The method further includes attaching the wafer to a carrier wafer with a smaller diameter lower portion of the wafer bonded to the carrier wafer. The method further includes thinning the wafer while it is attached to the wafer.

Abstract translation: 提供3D集成电路和结构结构中的边缘修剪工艺。 该方法包括以一定角度修剪晶片的边缘以形成倾斜侧壁。 该方法还包括将晶片附接到具有接合到载体晶片的晶片的较小直径下部的载体晶片。 该方法还包括在晶片附着到晶片时使晶片变薄。

公开(公告)号：US20130221479A1

公开(公告)日：2013-08-29

申请号：US13773014

申请日：2013-02-21

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Paul S. ANDRY ,  Edmund J. SPROGIS ,  Cornelia K. TSANG

IPC: H01L29/06

CPC classification number: H01L29/06 ,  H01L21/2007 ,  H01L21/6835 ,  H01L21/76251 ,  H01L21/8221 ,  H01L27/0688 ,  H01L2221/68368 ,  H01L2221/68381 ,  H01L2924/00011 ,  H01L2224/80001

Abstract: CMOS structures with a replacement substrate and methods of manufacture are disclosed herein. The method includes forming a device on a temporary substrate. The method further includes removing the temporary substrate. The method further includes bonding a permanent electrically insulative substrate to the device with a bonding structure.

Abstract translation: 具有替代衬底的CMOS结构和制造方法在本文中公开。 该方法包括在临时衬底上形成器件。 该方法还包括移除临时衬底。 所述方法还包括用固定结构将永久电绝缘衬底粘合到所述器件上。