公开(公告)号：US20200152514A1

公开(公告)日：2020-05-14

申请号：US16183787

申请日：2018-11-08

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Ashim Dutta ,  Jennifer Church ,  Ekmini A. de Silva ,  Luciana M. Thompson

IPC: H01L21/768 ,  H01L21/311 ,  H01L21/321 ,  H01L29/66 ,  H01L29/78

Abstract: A method for forming one or more self-aligned contacts on a semiconductor device includes applying a protective layer on an oxide surface above a source and drain of the semiconductor device. The protective layer covers a top surface of the oxide surface selective to nitride above a gate contact pillar. A sacrificial layer is applied to the nitride surface. The sacrificial layer is deposited only on the nitride surface that is selective to the oxide layer coated with the protective layer. The protective layer is removed from the oxide surface and source/drain contact holes are etched in the oxide surface to form self-aligned contacts on the semiconductor device.

公开(公告)号：US11062946B2

公开(公告)日：2021-07-13

申请号：US16183787

申请日：2018-11-08

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Ashim Dutta ,  Jennifer Church ,  Ekmini A. de Silva ,  Luciana M. Thompson

IPC: H01L21/768 ,  H01L21/311 ,  H01L29/78 ,  H01L29/66 ,  H01L21/321

Abstract: A method for forming one or more self-aligned contacts on a semiconductor device includes applying a protective layer on an oxide surface above a source and drain of the semiconductor device. The protective layer covers a top surface of the oxide surface selective to nitride above a gate contact pillar. A sacrificial layer is applied to the nitride surface. The sacrificial layer is deposited only on the nitride surface that is selective to the oxide layer coated with the protective layer. The protective layer is removed from the oxide surface and source/drain contact holes are etched in the oxide surface to form self-aligned contacts on the semiconductor device.