公开(公告)号：US20140159162A1

公开(公告)日：2014-06-12

申请号：US13708531

申请日：2012-12-07

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： JIN CAI ,  KEVIN K. CHAN ,  ROBERT H. DENNARD ,  BRUCE B. DORIS ,  BARRY P. LINDER ,  RAMACHANDRAN MURALIDHAR ,  GHAVAM G. SHAHIDI

IPC: H01L29/78 ,  H01L29/66

CPC classification number: H01L29/785 ,  H01L21/823821 ,  H01L27/0886 ,  H01L27/0924 ,  H01L29/66795 ,  H01L29/7851

Abstract: A method for forming a fin transistor in a bulk substrate includes forming a super steep retrograde well (SSRW) on a bulk substrate. The well includes a doped portion of a first conductivity type dopant formed below an undoped layer. A fin material is grown over the undoped layer. A fin structure is formed from the fin material, and the fin material is undoped or doped. Source and drain regions are provided adjacent to the fin structure to form a fin field effect transistor.

公开(公告)号：US20140159163A1

公开(公告)日：2014-06-12

申请号：US13968570

申请日：2013-08-16

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： JIN CAI ,  KEVIN K. CHAN ,  ROBERT H. DENNARD ,  BRUCE B. DORIS ,  BARRY P. LINDER ,  RAMACHANDRAN MURALIDHAR ,  GHAVAM G. SHAHIDI

IPC: H01L27/088

CPC classification number: H01L29/785 ,  H01L21/823821 ,  H01L27/0886 ,  H01L27/0924 ,  H01L29/66795 ,  H01L29/7851

Abstract: A method for forming a fin transistor in a bulk substrate includes forming a super steep retrograde well (SSRW) on a bulk substrate. The well includes a doped portion of a first conductivity type dopant formed below an undoped layer. A fin material is grown over the undoped layer. A fin structure is formed from the fin material, and the fin material is undoped or doped. Source and drain regions are provided adjacent to the fin structure to form a fin field effect transistor.

Abstract translation: 一种用于在体衬底中形成翅片晶体管的方法包括在大容量衬底上形成超陡逆行阱（SSRW）。 该阱包括在未掺杂层下形成的第一导电型掺杂剂的掺杂部分。 翅片材料生长在未掺杂的层上。 鳍状结构由翅片材料形成，翅片材料是未掺杂的或掺杂的。 源极和漏极区域邻近翅片结构设置以形成鳍状场效应晶体管。