公开(公告)号：US20190267086A1

公开(公告)日：2019-08-29

申请号：US16411807

申请日：2019-05-14

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Chung H. LAM ,  Scott C. LEWIS ,  Thomas M. MAFFITT ,  Jack MORRISH

IPC: G11C13/00 ,  G11C11/56

Abstract: Structures and methods for a multi-bit phase change memory are disclosed herein. A method includes establishing a write-reference voltage that incrementally ramps over a write period. The increments of the write-reference voltage correspond to discrete resistance states of a storage cell of the multi-bit phase change memory.

公开(公告)号：US20190355416A1

公开(公告)日：2019-11-21

申请号：US16526273

申请日：2019-07-30

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Chung H. LAM ,  Scott C. LEWIS ,  Thomas M. MAFFITT ,  Jack MORRISH

IPC: G11C13/00 ,  G11C11/56

Abstract: Structures and methods for a multi-bit phase change memory are disclosed herein. A method includes establishing a write-reference voltage that incrementally ramps over a write period. The increments of the write-reference voltage correspond to discrete resistance states of a storage cell of the multi-bit phase change memory.

公开(公告)号：US20180068725A1

公开(公告)日：2018-03-08

申请号：US15812213

申请日：2017-11-14

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Chung H. LAM ,  Scott C. LEWIS ,  Thomas M. MAFFITT ,  Jack MORRISH

IPC: G11C13/00 ,  G11C11/56

Abstract: Structures and methods for a multi-bit phase change memory are disclosed herein. A method includes establishing a write-reference voltage that incrementally ramps over a write period. The increments of the write-reference voltage correspond to discrete resistance states of a storage cell of the multi-bit phase change memory.

公开(公告)号：US20190355417A1

公开(公告)日：2019-11-21

申请号：US16526303

申请日：2019-07-30

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Chung H. LAM ,  Scott C. LEWIS ,  Thomas M. MAFFITT ,  Jack MORRISH

IPC: G11C13/00 ,  G11C11/56

Abstract: Structures and methods for a multi-bit phase change memory are disclosed herein. A method includes establishing a write-reference voltage that incrementally ramps over a write period. The increments of the write-reference voltage correspond to discrete resistance states of a storage cell of the multi-bit phase change memory.

公开(公告)号：US20190267087A1

公开(公告)日：2019-08-29

申请号：US16411844

申请日：2019-05-14

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Chung H. LAM ,  Scott C. LEWIS ,  Thomas M. MAFFITT ,  Jack MORRISH

IPC: G11C13/00 ,  G11C11/56

Abstract: Structures and methods for a multi-bit phase change memory are disclosed herein. A method includes establishing a write-reference voltage that incrementally ramps over a write period. The increments of the write-reference voltage correspond to discrete resistance states of a storage cell of the multi-bit phase change memory.