公开(公告)号：US09991202B2

公开(公告)日：2018-06-05

申请号：US14755440

申请日：2015-06-30

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Jim S. Liang ,  Justin C. Long ,  Atsushi Ogino

IPC: H01L21/76 ,  H01L23/528 ,  H01L21/768 ,  H01L21/311 ,  H01L23/522 ,  H01L23/532

CPC classification number: H01L23/5283 ,  H01L21/31144 ,  H01L21/76804 ,  H01L21/76805 ,  H01L21/76819 ,  H01L21/76831 ,  H01L21/76847 ,  H01L21/76877 ,  H01L21/76879 ,  H01L21/7688 ,  H01L21/76897 ,  H01L23/485 ,  H01L23/522 ,  H01L23/5226 ,  H01L23/53209 ,  H01L23/53238

Abstract: A method of forming a semiconductor structure includes forming a first insulating layer containing a first metal layer embedded therein and on a surface of a semiconductor substrate. The method further includes forming an inter-layer dielectric (ILD) layer on the first insulating layer, and forming at least one via trench structure including a first metallization trench and a via in the ILD layer. In addition, the method also includes depositing a metal material to form a first metallization layer in the first metallization trench, a via contact in the via, and a second metal layer on top of at least a portion of the first metal layer in the opening of the first insulating layer. The first metal layer and the second metal layer constitute a multilayer metal contact located in the opening of the first insulating layer.

公开(公告)号：US20170005037A1

公开(公告)日：2017-01-05

申请号：US14755440

申请日：2015-06-30

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Jim S. Liang ,  Justin C. Long ,  Atsushi Ogino

IPC: H01L23/528 ,  H01L23/532 ,  H01L23/522 ,  H01L21/768 ,  H01L21/311

CPC classification number: H01L23/5283 ,  H01L21/31144 ,  H01L21/76804 ,  H01L21/76805 ,  H01L21/76819 ,  H01L21/76831 ,  H01L21/76847 ,  H01L21/76877 ,  H01L21/76879 ,  H01L21/7688 ,  H01L21/76897 ,  H01L23/485 ,  H01L23/522 ,  H01L23/5226 ,  H01L23/53209 ,  H01L23/53238

Abstract: A method of forming a semiconductor structure includes forming a first insulating layer containing a first metal layer embedded therein and on a surface of a semiconductor substrate. The method further includes forming an inter-layer dielectric (ILD) layer on the first insulating layer, and forming at least one via trench structure including a first metallization trench and a via in the ILD layer. In addition, the method also includes depositing a metal material to form a first metallization layer in the first metallization trench, a via contact in the via, and a second metal layer on top of at least a portion of the first metal layer in the opening of the first insulating layer. The first metal layer and the second metal layer constitute a multilayer metal contact located in the opening of the first insulating layer.

Abstract translation: 形成半导体结构的方法包括形成包含嵌入其中的第一金属层和半导体衬底的表面上的第一绝缘层。 该方法还包括在第一绝缘层上形成层间介电层（ILD）层，以及在ILD层中形成包括第一金属化沟槽和通孔的至少一个通孔沟槽结构。 此外，该方法还包括沉积金属材料以在第一金属化沟槽中形成第一金属化层，在通孔中形成通孔接触，并且在开口中的第一金属层的至少一部分的顶部上形成第二金属层 的第一绝缘层。 第一金属层和第二金属层构成位于第一绝缘层的开口中的多层金属接触。