公开(公告)号：US20240194670A1

公开(公告)日：2024-06-13

申请号：US18078245

申请日：2022-12-09

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Ruqiang Bao ,  Fee Li Lie ,  Michael P. Belyansky ,  Matt Malley

IPC: H01L27/06 ,  H01L21/768 ,  H01L23/00 ,  H01L23/48

CPC classification number: H01L27/0688 ,  H01L21/76898 ,  H01L23/481 ,  H01L24/32 ,  H01L24/83 ,  H01L2224/32145 ,  H01L2224/83896

Abstract: A multi-layer stacked semiconductor device includes a first integrated circuit device and a bonding insulator layer formed upon the first integrated circuit device. The bonding insulator layer includes an insulating material layer and an etch stop layer. The semiconductor device also includes a second integrated circuit device formed over the first integrated circuit device in a stacked configuration. The semiconductor device also includes a bonding insulator layer formed between the second integrated circuit device and the insulating material layer. The insulating material layer and the bonding insulator layer are bonded adjacent to one another.