公开(公告)号：US20230189660A1

公开(公告)日：2023-06-15

申请号：US17643582

申请日：2021-12-09

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： ASHIM DUTTA ,  SAUMYA SHARMA ,  TIANJI ZHOU ,  CHIH-CHAO YANG

IPC: H01L43/02 ,  H01L27/22 ,  H01L43/12 ,  H01L43/08

CPC classification number: H01L43/02 ,  H01L27/222 ,  H01L43/08 ,  H01L43/12

Abstract: An MRAM device is provided. The MRAM device includes a semiconductor device comprising a bottom contact electrode (BEC), and an MRAM stack formed on the BEC. A width of an upper portion of the BEC is less than a width of the MRAM stack.