公开(公告)号：US20230189660A1

公开(公告)日：2023-06-15

申请号：US17643582

申请日：2021-12-09

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： ASHIM DUTTA ,  SAUMYA SHARMA ,  TIANJI ZHOU ,  CHIH-CHAO YANG

IPC: H01L43/02 ,  H01L27/22 ,  H01L43/12 ,  H01L43/08

CPC classification number: H01L43/02 ,  H01L27/222 ,  H01L43/08 ,  H01L43/12

Abstract: An MRAM device is provided. The MRAM device includes a semiconductor device comprising a bottom contact electrode (BEC), and an MRAM stack formed on the BEC. A width of an upper portion of the BEC is less than a width of the MRAM stack.

公开(公告)号：US20230189534A1

公开(公告)日：2023-06-15

申请号：US17644098

申请日：2021-12-14

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： ASHIM DUTTA ,  MICHAEL RIZZOLO ,  JON SLAUGHTER ,  CHIH-CHAO YANG ,  THEODORUS E. STANDAERT

IPC: H01L27/22 ,  H01L43/12

CPC classification number: H01L27/222 ,  H01L43/12 ,  H01L43/02

Abstract: An MRAM device is provided. The MRAM device includes a first dielectric cap layer formed on an underlying layer, a second dielectric cap layer formed on the first dielectric cap layer, the first dielectric cap layer including a lower-κ material than that of the second dielectric cap layer. The MRAM device also includes a bottom electrode contact (BEC) formed through the first dielectric cap layer and the second dielectric cap layer, an MRAM stack formed on the BEC, and wherein the second dielectric cap layer surrounds an upper portion of the BEC.