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公开(公告)号：US10069025B2
公开(公告)日：2018-09-04
申请号：US14427930
申请日：2013-09-17
发明人： Henry James Snaith , Edward James William Crossland , Andrew Hey , James Ball , Michael Lee , Pablo Docampo
IPC分类号： H01L31/036 , H01L51/42 , H01L31/0224 , H01L31/0352 , H01L31/0725 , H01L31/18 , H01L51/00 , C23C14/06
CPC分类号： H01L31/036 , C23C14/06 , H01L31/022466 , H01L31/035272 , H01L31/0725 , H01L31/1864 , H01L31/1884 , H01L51/0026 , H01L51/0032 , H01L51/0037 , H01L51/422 , H01L51/4226 , Y02E10/549
摘要： The invention provides an optoelectronic device comprising a photoactive region, which photoactive region comprises: an n-type region comprising at least one n-type layer; a p-type region comprising at least one p-type layer; and, disposed between the n-type region and the p-type region: a layer of a perovskite semiconductor without open porosity. The perovskite semiconductor is generally light-absorbing. In some embodiments, disposed between the n-type region and the p-type region is: (i) a first layer which comprises a scaffold material, which is typically porous, and a perovskite semiconductor, which is typically disposed in pores of the scaffold material; and (ii) a capping layer disposed on said first layer, which capping layer is said layer of a perovskite semiconductor without open porosity, wherein the perovskite semiconductor in the capping layer is in contact with the perovskite semiconductor in the first layer. The layer of the perovskite semiconductor without open porosity (which may be said capping layer) typically forms a planar heterojunction with the n-type region or the p-type region. The invention also provides processes for producing such optoelectronic devices which typically involve solution deposition or vapour deposition of the perovskite. In one embodiment, the process is a low temperature process; for instance, the entire process may be performed at a temperature or temperatures not exceeding 150° C.
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公开(公告)号：US20150129034A1
公开(公告)日：2015-05-14
申请号：US14401452
申请日：2013-05-20
发明人： Henry Snaith , Michael Lee
IPC分类号： H01L31/0264 , H01G9/20 , H01L51/42
CPC分类号： H01L31/0264 , H01G9/2004 , H01G9/2036 , H01L51/0032 , H01L51/4213 , H01L51/422 , H01L51/4226 , H01L2031/0344 , H01L2251/306 , Y02E10/549 , Y02P70/521
摘要： The invention provides an optoelectronic device comprising a porous material, which porous material comprises a semiconductor comprising a perovskite. The porous material may comprise a porous perovskite. Thus, the porous material may be a perovskite material which is itself porous. Additionally or alternatively, the porous material may comprise a porous dielectric scaffold material, such as alumina, and a coating disposed on a surface thereof, which coating comprises the semiconductor comprising the perovskite. Thus, in some embodiments the porosity arises from the dielectric scaffold rather than from the perovskite itself. The porous material is usually infiltrated by a charge transporting material such as a hole conductor, a liquid electrolyte, or an electron conductor. The invention further provides the use of the porous material as a semiconductor in an optoelectronic device. Further provided is the use of the porous material as a photosensitizing, semiconducting material in an optoelectronic device. The invention additionally provides the use of a layer comprising the porous material as a photoactive layer in an optoelectronic device. Further provided is a photoactive layer for an optoelectronic device, which photoactive layer comprises the porous material.
摘要翻译： 本发明提供一种包括多孔材料的光电子器件，该多孔材料包括包含钙钛矿的半导体。 多孔材料可以包括多孔钙钛矿。 因此，多孔材料可以是本身是多孔的钙钛矿材料。 另外或替代地，多孔材料可以包括多孔介电支架材料，例如氧化铝，以及设置在其表面上的涂层，该涂层包括包含钙钛矿的半导体。 因此，在一些实施方案中，孔隙率来自电介质支架而不是钙钛矿本身。 多孔材料通常由诸如空穴导体，液体电解质或电子导体的电荷输送材料渗透。 本发明还提供了多孔材料在光电器件中作为半导体的用途。 进一步提供的是使用多孔材料作为光电子器件中的光敏半导体材料。 本发明另外提供了包含多孔材料的层作为光电器件中的光活性层的用途。 还提供了一种用于光电子器件的光敏层，该光敏层包括多孔材料。
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3.发明申请OPTOELECTRONIC DEVICE COMPRISING POROUS SCAFFOLD MATERIAL AND PEROVSKITES 审中-公开包含多孔SCAFF材料和PEROVSKITES的光电子器件公开(公告)号：US20150122314A1
公开(公告)日：2015-05-07
申请号：US14401394
申请日：2013-05-20
发明人： Henry Snaith , Michael Lee
IPC分类号： H01L51/42 , H01L31/032
CPC分类号： H01L51/4213 , H01L31/0324 , H01L51/0032 , H01L51/422 , H01L51/4226 , H01L2031/0344 , Y02E10/549
摘要： The invention provides an optoelectronic device comprising: (i) a porous dielectric scaffold material; and (ii) a semiconductor having a band gap of less than or equal to 3.0 eV, in contact with the scaffold material. Typically the semiconductor, which may be a perovskite, is disposed on the surface of the porous dielectric scaffold material, so that it is supported on the surfaces of pores within the scaffold. In one embodiment, the optoelectronic device is an optoelectronic device which comprises a photoactive layer, wherein the photoactive layer comprises: (a) said porous dielectric scaffold material; (b) said semiconductor; and (c) a charge transporting material. The invention further provides the use, as a photoactive material in an optoelectronic device, of: (i) a porous dielectric scaffold material; and (ii) a semiconductor having a band gap of less than or equal to 3.0 eV, in contact with the scaffold material. Further provided is the use of a layer comprising: (i) a porous dielectric scaffold material; and (ii) a semiconductor having a band gap of less than or equal to 3.0 eV, in contact with the scaffold material; as a photoactive layer in an optoelectronic device. In another aspect, the invention provides a photoactive layer for an optoelectronic device comprising (a) a porous dielectric scaffold material; (b) a semiconductor having a band gap of less than or equal to 3.0 eV, in contact with the scaffold material; and (c) a charge transporting material.
摘要翻译： 本发明提供了一种光电器件，其包括：（i）多孔介电支架材料; 和（ii）与支架材料接触的带隙小于或等于3.0eV的半导体。 通常，半导体（其可以是钙钛矿）设置在多孔介电支架材料的表面上，使得其支撑在支架内的孔的表面上。 在一个实施例中，光电子器件是包括光敏层的光电子器件，其中光活性层包括：（a）所述多孔介电支架材料; （b）所述半导体; 和（c）电荷输送材料。 本发明还提供了作为光电子器件中的光活性材料的用途：（i）多孔介电支架材料; 和（ii）与支架材料接触的带隙小于或等于3.0eV的半导体。 还提供了使用一层，其包括：（i）多孔介电支架材料; 和（ii）与支架材料接触的带隙小于或等于3.0eV的半导体; 作为光电子器件中的光活性层。 在另一方面，本发明提供了一种用于光电子器件的光敏层，包括（a）多孔介电支架材料; （b）与支架材料接触的带隙小于或等于3.0eV的半导体; 和（c）电荷输送材料。
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公开(公告)号：US20150249170A1
公开(公告)日：2015-09-03
申请号：US14427930
申请日：2013-09-17
发明人： Henry James Snaith , Edward James William Crossland , Andrew Hey , James Ball , Michael Lee , Pablo Docampo
IPC分类号： H01L31/036 , H01L51/00 , H01L31/18 , H01L31/0224 , H01L31/0725 , H01L31/0352
CPC分类号： H01L31/036 , C23C14/06 , H01L31/022466 , H01L31/035272 , H01L31/0725 , H01L31/1864 , H01L31/1884 , H01L51/0026 , H01L51/0032 , H01L51/0037 , H01L51/422 , H01L51/4226 , Y02E10/549
摘要： The invention provides an optoelectronic device comprising a photoactive region, which photoactive region comprises: an n-type region comprising at least one n-type layer; a p-type region comprising at least one p-type layer; and, disposed between the n-type region and the p-type region: a layer of a perovskite semiconductor without open porosity. The perovskite semiconductor is generally light-absorbing. In some embodiments, disposed between the n-type region and the p-type region is: (i) a first layer which comprises a scaffold material, which is typically porous, and a perovskite semiconductor, which is typically disposed in pores of the scaffold material; and (ii) a capping layer disposed on said first layer, which capping layer is said layer of a perovskite semiconductor without open porosity, wherein the perovskite semiconductor in the capping layer is in contact with the perovskite semiconductor in the first layer. The layer of the perovskite semiconductor without open porosity (which may be said capping layer) typically forms a planar heterojunction with the n-type region or the p-type region. The invention also provides processes for producing such optoelectronic devices which typically involve solution deposition or vapour deposition of the perovskite. In one embodiment, the process is a low temperature process; for instance, the entire process may be performed at a temperature or temperatures not exceeding 150° C.
摘要翻译： 本发明提供了一种包含光活性区域的光电器件，该光活性区域包括：包含至少一个n型层的n型区域; 包括至少一个p型层的p型区域; 并且设置在n型区域和p型区域之间：没有开孔率的钙钛矿半导体层。 钙钛矿半导体通常是光吸收的。 在一些实施例中，设置在n型区域和p型区域之间的是：（i）包含通常是多孔的支架材料的第一层和通常设置在支架孔中的钙钛矿半导体 材料; 和（ii）设置在所述第一层上的覆盖层，所述覆盖层是没有开放孔隙率的所述钙钛矿半导体层，其中所述覆盖层中的钙钛矿半导体与所述第一层中的钙钛矿半导体接触。 没有开放孔隙率的钙钛矿半导体层（其可以是所述覆盖层）通常与n型区域或p型区域形成平面异质结。 本发明还提供了用于生产通常涉及钙钛矿的溶液沉积或气相沉积的这种光电器件的方法。 在一个实施方案中，该方法是低温过程; 例如，整个过程可以在不超过150℃的温度或温度下进行。
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5.发明申请公开(公告)号：US20150136232A1
公开(公告)日：2015-05-21
申请号：US14401423
申请日：2013-05-20
发明人： Henry Snaith , Michael Lee , Takuro Murakami
摘要： The invention provides an optoelectronic device comprising a mixed-anion perovskite, wherein the mixed-anion perovskite comprises two or more different anions selected from halide anions and chalcogenide anions. The invention further provides a mixed halide perovskite of the formula (I) [A][B][X]3 wherein: [A] is at least one organic cation; [B] is at least one divalent metal cation; and [X] is said two or more different halide anions. In another aspect, the invention provides the use of a mixed-anion perovskite as a sensitizer in an optoelectronic device, wherein the mixed-anion perovskite comprises two or more different anions selected from halide anions and chalcogenide anions. The invention also provides a photosensitizing material for an optoelectronic device comprising a mixed-anion perovskite wherein the mixed-anion perovskite comprises two or more different anions selected from halide anions and chalcogenide anions.
摘要翻译： 本发明提供了一种包含混合阴离子钙钛矿的光电器件，其中混合阴离子钙钛矿包含两种或更多种选自卤化物阴离子和硫族化物阴离子的不同阴离子。 本发明还提供式（I）[A] [B] [X] 3的混合卤化钙钙钛矿，其中：[A]为至少一种有机阳离子; [B]是至少一种二价金属阳离子; 和[X]是两种或多种不同的卤素阴离子。 另一方面，本发明提供了在光电子器件中使用混合阴离子钙钛矿作为敏化剂，其中所述混合阴离子钙钛矿包含选自卤化物阴离子和硫族化物阴离子的两种或更多种不同的阴离子。 本发明还提供了一种用于包含混合阴离子钙钛矿的光电器件的光敏材料，其中混合阴离子钙钛矿包含两种或更多种选自卤化物阴离子和硫族化物阴离子的不同阴离子。
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公开(公告)号：US10079320B2
公开(公告)日：2018-09-18
申请号：US14401452
申请日：2013-05-20
发明人： Henry Snaith , Michael Lee
IPC分类号： H01L31/0264 , H01L51/42 , H01G9/20 , H01L31/0256
CPC分类号： H01L31/0264 , H01G9/2004 , H01G9/2036 , H01L51/0032 , H01L51/4213 , H01L51/422 , H01L51/4226 , H01L2031/0344 , H01L2251/306 , Y02E10/549 , Y02P70/521
摘要： The invention provides an optoelectronic device comprising a porous material, which porous material comprises a semiconductor comprising a perovskite. The porous material may comprise a porous perovskite. Thus, the porous material may be a perovskite material which is itself porous. Additionally or alternatively, the porous material may comprise a porous dielectric scaffold material, such as alumina, and a coating disposed on a surface thereof, which coating comprises the semiconductor comprising the perovskite. Thus, in some embodiments the porosity arises from the dielectric scaffold rather than from the perovskite itself. The porous material is usually infiltrated by a charge transporting material such as a hole conductor, a liquid electrolyte, or an electron conductor. The invention further provides the use of the porous material as a semiconductor in an optoelectronic device. Further provided is the use of the porous material as a photosensitizing, semiconducting material in an optoelectronic device. The invention additionally provides the use of a layer comprising the porous material as a photoactive layer in an optoelectronic device. Further provided is a photoactive layer for an optoelectronic device, which photoactive layer comprises the porous material.
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公开(公告)号：US10388897B2
公开(公告)日：2019-08-20
申请号：US14401394
申请日：2013-05-20
发明人： Henry Snaith , Michael Lee
IPC分类号： H01L51/42 , H01L31/032 , H01L31/0256
摘要： The invention provides an optoelectronic device comprising: (i) a porous dielectric scaffold material; and (ii) a semiconductor having a band gap of less than or equal to 3.0 eV, in contact with the scaffold material. Typically the semiconductor, which may be a perovskite, is disposed on the surface of the porous dielectric scaffold material, so that it is supported on the surfaces of pores within the scaffold. In one embodiment, the optoelectronic device is an optoelectronic device which comprises a photoactive layer, wherein the photoactive layer comprises: (a) said porous dielectric scaffold material; (b) said semiconductor; and (c) a charge transporting material. The invention further provides the use, as a photoactive material in an optoelectronic device, of: (i) a porous dielectric scaffold material; and (ii) a semiconductor having a band gap of less than or equal to 3.0 eV, in contact with the scaffold material. Further provided is the use of a layer comprising: (i) a porous dielectric scaffold material; and (ii) a semiconductor having a band gap of less than or equal to 3.0 eV, in contact with the scaffold material; as a photoactive layer in an optoelectronic device. In another aspect, the invention provides a photoactive layer for an optoelectronic device comprising (a) a porous dielectric scaffold material; (b) a semiconductor having a band gap of less than or equal to 3.0 eV, in contact with the scaffold material; and (c) a charge transporting material.
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