摘要:
Systems, methods, and devices for iteratively writing contents to memory locations are provided. A statistical model is used to determine a sequence of pulses to write desired contents to a memory location. The contents can be expressed as a resistance value in a range to store one or more bits in a memory cell. For phase change memory, an adaptive reset pulse and one or more annealing pulses are selected based on a desired resistance range. Reading the resistance value of the memory cell can provide feedback to determine adjustments in an overall pulse application strategy. The statistical model and a look up table can be used to select and modify pulses. Adaptively updating the statistical model and look up table may reduce the number of looping iterations to shift the resistance value of the memory cell into the desired resistance range.
摘要:
Systems, methods, and devices for iteratively writing contents to memory locations are provided. A statistical model is used to determine a sequence of pulses to write desired contents to a memory location. The contents can be expressed as a resistance value in a range to store one or more bits in a memory cell. For phase change memory, an adaptive reset pulse and one or more annealing pulses are selected based on a desired resistance range. Reading the resistance value of the memory cell can provide feedback to determine adjustments in an overall pulse application strategy. The statistical model and a look up table can be used to select and modify pulses. Adaptively updating the statistical model and look up table may reduce the number of looping iterations to shift the resistance value of the memory cell into the desired resistance range.
摘要:
Systems, methods, and devices for iteratively writing contents to memory locations are provided. A statistical model is used to determine a sequence of pulses to write desired contents to a memory location. The contents can be expressed as a resistance value in a range to store one or more bits in a memory cell. For phase change memory, an adaptive reset pulse and one or more annealing pulses are selected based on a desired resistance range. Reading the resistance value of the memory cell can provide feedback to determine adjustments in an overall pulse application strategy. The statistical model and a look up table can be used to select and modify pulses. Adaptively updating the statistical model and look up table may reduce the number of looping iterations to shift the resistance value of the memory cell into the desired resistance range.
摘要:
Selecting bins in a memory by receiving a target cost for performing writes at an analog memory that is capable of storing a range of values. Possible bins that may be created in the range of values and a cost associated with each possible bin are determined. Each possible bin includes one or more of the values. A group of bins are identified, the group of bins are among the possible bins with associated costs that are within a threshold of the target cost. A maximum number of bins are selected from the group of bins that have non-overlapping values. The selected bins are stored along with the values of the selected bins utilized to encode and decode contents of the analog memory.
摘要:
An analog memory having adjustable write bins including a system for writing to the memory. The system includes a write apparatus interpreting one or more write control signals, generating a write signal, and applying the write signal at a selected memory location to store a desired content. The selected memory location is subject to data dependent noise and is capable of storing a range of values grouped into “n” bins configured such that the average cost to write to at least “n-1” of the bins is within a threshold of a target cost for the selected analog memory location. The system also includes a read apparatus. The system further includes write control circuitry that includes a write signal selector selecting the one or more write control signals responsive to the desired content, current content of the selected memory location, and a bin associated with the desired content.
摘要:
Systems, methods, and devices for iteratively writing contents to memory locations are provided. A statistical model is used to determine a sequence of pulses to write desired contents to a memory location. The contents can be expressed as a resistance value in a range to store one or more bits in a memory cell. For phase change memory, an adaptive reset pulse and one or more annealing pulses are selected based on a desired resistance range. Reading the resistance value of the memory cell can provide feedback to determine adjustments in an overall pulse application strategy. The statistical model and a look up table can be used to select and modify pulses. Adaptively updating the statistical model and look up table may reduce the number of looping iterations to shift the resistance value of the memory cell into the desired resistance range.
摘要:
An analog memory having adjustable write bins including a system for writing to the memory. The system includes a write apparatus interpreting one or more write control signals, generating a write signal, and applying the write signal at a selected memory location to store a desired content. The selected memory location is subject to data dependent noise and is capable of storing a range of values grouped into “n” bins configured such that the average cost to write to at least “n-1” of the bins is within a threshold of a target cost for the selected analog memory location. The system also includes a read apparatus. The system further includes write control circuitry that includes a write signal selector selecting the one or more write control signals responsive to the desired content, current content of the selected memory location, and a bin associated with the desired content.
摘要:
Selecting bins in a memory by receiving a target cost for performing writes at an analog memory that is capable of storing a range of values. Possible bins that may be created in the range of values and a cost associated with each possible bin are determined. Each possible bin includes one or more of the values. A group of bins are identified, the group of bins are among the possible bins with associated costs that are within a threshold of the target cost. A maximum number of bins are selected from the group of bins that have non-overlapping values. The selected bins are stored along with the values of the selected bins utilized to encode and decode contents of the analog memory.
摘要:
Providing increased capacity in heterogeneous storage elements including a method for reading from memory. The method includes receiving a read word from a block of memory cells, where physical characteristics of the memory cells support different sets of data levels. The read word is separated into two or more virtual read vectors. For each of the virtual read vectors, the codebook that was utilized to generate the virtual read vector is identified and a partial read data vector is generated. The generating includes multiplying the virtual read vector by a matrix that represents the codebook. The partial read data vectors are combined into a read message and the read message is output.
摘要:
A method for writing in a memory system that includes receiving an address corresponding to a memory location in a memory, receiving a desired content to be written, encoding the desired content into a symbol, and writing the symbol to the memory location using an iterative write process of at least one write and one read to the memory location. The iterative write process includes determining if the symbol was successfully written to the memory location and exiting the iterative write process in response to the symbol being successfully written to the memory location. The iterative write process also includes determining if a halt condition has been met and exiting the iterative write process if the halt condition has been met. Once the iterative write process has been exited, the memory location may be identified as a candidate for being written with a special symbol.