公开(公告)号：US20080231856A1

公开(公告)日：2008-09-25

申请号：US12053174

申请日：2008-03-21

申请人： Ichirota NAGAHAMA

发明人： Ichirota NAGAHAMA

IPC分类号： G01B11/00 ,  H01L21/66

CPC分类号： G01B15/02 ,  H01J37/222 ,  H01J37/28 ,  H01J2237/24592 ,  H01J2237/2817

摘要： A substrate inspection method includes forming a conductive thin film on a surface of an inspection target substrate with a pattern formed thereon, generating an electron beam and irradiating the substrate having the thin film formed thereon with the electron beam, detecting at least any of secondary electrons, reflected electrons and backscattered electrons released from the surface of the substrate and outputting signals constituting an inspection image, and selecting at least any of a material, a film thickness and a configuration for the thin film, or at least any of a material, a film thickness and a configuration for the thin film and an irradiation condition with the electron beam according to an arbitrary inspection image characteristic so that an inspection image according to an inspection purpose can be obtained.

摘要翻译： 基板检查方法包括：在其上形成图案的检查对象基板的表面上形成导电性薄膜，产生电子束，并对其上形成有薄膜的基板照射电子束，检测二次电子中的至少一种 ，从基板的表面释放的反射电子和反向散射电子，并输出构成检查图像的信号，并且选择薄膜的材料，膜厚度和结构中的至少任一种，或者至少选择材料， 膜厚度和薄膜的结构以及根据任意检查图像特性的电子束的照射条件，从而可以获得根据检查目的的检查图像。

公开(公告)号：US20100019149A1

公开(公告)日：2010-01-28

申请号：US12538416

申请日：2009-08-10

申请人： Kenji WATANABE ,  Takeshi MURAKAMI ,  Masahiro HATAKEYAMA ,  Yoshinao HIRABAYASHI ,  Tohru SATAKE ,  Nobuharu NOJI ,  Yuichiro YAMAZAKI ,  Ichirota NAGAHAMA

发明人： Kenji WATANABE ,  Takeshi MURAKAMI ,  Masahiro HATAKEYAMA ,  Yoshinao HIRABAYASHI ,  Tohru SATAKE ,  Nobuharu NOJI ,  Yuichiro YAMAZAKI ,  Ichirota NAGAHAMA

IPC分类号： G01N23/22

CPC分类号： H01J37/32211 ,  G01N23/225 ,  H01J37/32357 ,  H01J2237/2441 ,  H01J2237/2446

摘要： An apparatus capable of detecting defects of a pattern on a sample with high accuracy and reliability and at a high throughput, and a semiconductor manufacturing method using the same are provided. The electron beam apparatus is a mapping-projection-type electron beam apparatus for observing or evaluating a surface of the sample by irradiating the sample with a primary electron beam and forming on a detector an image of reflected electrons emitted from the sample. An electron impact-type detector such as an electron impact-type CCD or an electron impact-type TDI is used as the detector for detecting the reflected electrons. The reflected electrons are selectively detected from an energy difference between the reflected electrons and secondary electrons emitted from the sample. To eliminate charge-up caused on the sample surface by irradiation with the primary electron beam, the surface of the sample is covered with a cover placed above the sample and a gas is supplied to the space above the sample covered with the cover. The gas is brought into contact with the sample surface to reduce charge-up on the sample surface.

摘要翻译： 提供了能够以高精度和可靠性以高产量检测样品上的图案的缺陷的装置，以及使用该缺陷的半导体制造方法。 电子束装置是用于通过用一次电子束照射样品来观察或评价样品的表面的映射投影型电子束装置，并在检测器上形成从样品发射的反射电子的图像。 作为检测反射电子的检测器，使用电子碰撞型CCD或电子碰撞型TDI等电子轰击型检测器。 从反射电子和从样品发射的二次电子之间的能量差选择性地检测反射电子。 为了通过照射一次电子束来消除样品表面上产生的电荷，样品的表面被放置在样品上方的盖子覆盖，并将气体供应到覆盖有覆盖物的样品上方。 气体与样品表面接触以减少样品表面的充电。

公开(公告)号：US20120026316A1

公开(公告)日：2012-02-02

申请号：US13014226

申请日：2011-01-26

申请人： Ichirota NAGAHAMA

发明人： Ichirota NAGAHAMA

IPC分类号： H04N7/18 ,  G06K9/00

CPC分类号： G01N21/95607 ,  G06T7/001 ,  G06T2207/10061 ,  G06T2207/30148 ,  H01L22/12 ,  H01L2924/0002 ,  H04N7/183 ,  H01L2924/00

摘要： According to an embodiment, a pattern inspection apparatus includes an imaging unit, a defect detection unit, and an inspection control unit. The imaging unit is configured to image a pattern on a substrate to acquire a pattern image. The defect detection unit is configured to detect a defect of the pattern by a first outer shape comparison in associate with the pattern image and design information for the pattern or by a comparison in pixel values between images of patterns designed to be formed into the same shape in the substrate. The inspection control unit is configured to select an inspection based on the amount of the defect detected by the first outer shape comparison or based on a value of a gradient of an edge profile of the pattern image and to control the imaging unit and the defect detection unit in accordance with the selected inspection.

摘要翻译： 根据实施例，图案检查装置包括成像单元，缺陷检测单元和检查控制单元。 成像单元被配置为对基板上的图案进行成像以获取图案图像。 缺陷检测单元被配置为通过与图案图像相关联的第一外部形状比较和图案的设计信息或通过设计成形成相同形状的图案的图像之间的像素值的比较来检测图案的缺陷 在基材中。 检查控制单元被配置为基于由第一外部形状比较检测到的缺陷的量或者基于图案图像的边缘轮廓的梯度的值来选择检查，并且控制成像单元和缺陷检测 单位按照选定的检验。

公开(公告)号：US20100096550A1

公开(公告)日：2010-04-22

申请号：US12580505

申请日：2009-10-16

申请人： Yuichiro YAMAZAKI ,  Ichirota NAGAHAMA

发明人： Yuichiro YAMAZAKI ,  Ichirota NAGAHAMA

IPC分类号： G01N23/225

CPC分类号： G01N23/2251 ,  H01J37/05 ,  H01J37/28 ,  H01J2237/057

摘要： A sample is evaluated at a high throughput by reducing axial chromatic aberration and increasing the transmittance of secondary electrons. Electron beams emitted from an electron gun 1 are irradiated onto a sample 7 through a primary electro-optical system, and electrons consequently emitted from the sample are detected by a detector 12 through a secondary electro-optical system. A Wien filter 8 comprising a multi-pole lens for correcting axial chromatic aberration is disposed between a magnification lens 10 in the secondary electro-optical system and a beam separator 5 for separating a primary electron beam and a secondary electron beam, for correcting axial chromatic aberration caused by an objective lens 14 which comprises an electromagnetic lens having a magnetic gap defined on a sample side.

摘要翻译： 通过减少轴向色差并增加二次电子的透射率，以高产量来评估样品。 从电子枪1发射的电子束通过初级电光系统照射到样品7上，由检测器12通过次级电光学系统检测从样品发射的电子。 包括用于校正轴向色差的多极透镜的维恩滤波器8设置在二次电光学系统中的放大透镜10和用于分离一次电子束和二次电子束的光束分离器5之间，用于校正轴向色度 由物镜14引起的像差包括具有限定在样品侧的磁隙的电磁透镜。