公开(公告)号：US07101812B2

公开(公告)日：2006-09-05

申请号：US10386163

申请日：2003-03-10

申请人： Ignaz Eisele ,  Alexandra Ludsteck ,  Jörg Schulze ,  Zsolt Nenyei ,  Waltraud Dietl ,  Georg Roters

发明人： Ignaz Eisele ,  Alexandra Ludsteck ,  Jörg Schulze ,  Zsolt Nenyei ,  Waltraud Dietl ,  Georg Roters

IPC分类号： H01L21/44

CPC分类号： H01L21/0214 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02227 ,  H01L21/02238 ,  H01L21/02247 ,  H01L21/02249 ,  H01L21/02255 ,  H01L21/02312 ,  H01L21/02326 ,  H01L21/02337 ,  H01L21/3144 ,  H01L21/31662

摘要： A process for forming and/or modifying dielectric films on semiconductor substrates is disclosed. According to the present invention, a semiconductor wafer is exposed to a process gas containing a reactive component. The temperature to which the semiconductor wafer is heated and the partial pressure of the reactive component are selected so that, sometime during the process, diffusion of the reactive components occurs through the dielectric film to the film/semiconductor substrate interface. Further, diffusion also occurs of semiconductor atoms through the dielectric film to an exterior surface of the film. The process of the present invention has been found well suited to forming and/or modifying very thin dielectric films, such as films having a thickness of less than 8 nm.

摘要翻译： 公开了一种用于在半导体衬底上形成和/或修饰电介质膜的工艺。 根据本发明，半导体晶片暴露于含有反应成分的工艺气体中。 选择加热半导体晶片的温度和反应性组分的分压，使得在该过程的某个时间，反应组分的扩散通过电介质膜发生到膜/半导体衬底界面。 此外，通过电介质膜的半导体原子也发生到膜的外表面的扩散。 已经发现本发明的方法非常适合于形成和/或改性非常薄的电介质膜，例如厚度小于8nm的膜。