公开(公告)号：US06674470B1

公开(公告)日：2004-01-06

申请号：US08933975

申请日：1997-09-19

申请人： Nagataka Tanaka ,  Eiji Oba ,  Keiji Mabuchi ,  Michio Sasaki ,  Ryohei Miyagawa ,  Hirofumi Yamashita ,  Yoshinori Iida ,  Hisanori Ihara ,  Tetsuya Yamaguchi

发明人： Nagataka Tanaka ,  Eiji Oba ,  Keiji Mabuchi ,  Michio Sasaki ,  Ryohei Miyagawa ,  Hirofumi Yamashita ,  Yoshinori Iida ,  Hisanori Ihara ,  Tetsuya Yamaguchi

IPC分类号： H04N314

CPC分类号： H04N5/3765 ,  H04N5/3575 ,  H04N5/37457

摘要： A solid state imaging device comprises a plurality of unit cells formed in a surface region of a semiconductor substrate. Each of the unit cells comprises a photoelectric converter, an MOS-type read-out transistor for reading a signal from the photoelectric converter, an MOS-type amplifying transistor having a gate connected to a drain of the read-out transistor and for amplifying the signal read by the read-out transistor, a reset transistor having a source connected to the drain of the read-out transistor and for resetting a potential of a gate of the amplifying transistor, and an addressing element connected in series to the amplifying transistor and for selecting the unit cell. The read-out transistor is formed in a first device region in the semiconductor substrate. The reset transistor is formed in a second device region in the semiconductor substrate. The drain of the read-out transistor is connected to the source of the reset transistor through a wiring layer formed on the surface of the semiconductor substrate.

摘要翻译： 固态成像装置包括形成在半导体衬底的表面区域中的多个单元电池。 每个单电池包括光电转换器，用于读取来自光电转换器的信号的MOS型读出晶体管，MOS型放大晶体管，其栅极连接到读出晶体管的漏极，并用于放大 由读出晶体管读取的信号，复位晶体管，其源极连接到读出晶体管的漏极，并用于复位放大晶体管的栅极的电位;以及寻址元件，串联连接到放大晶体管， 用于选择单元格。 读出晶体管形成在半导体衬底中的第一器件区域中。 复位晶体管形成在半导体衬底中的第二器件区域中。 读出晶体管的漏极通过形成在半导体衬底的表面上的布线层连接到复位晶体管的源极。

公开(公告)号：US06281533B1

公开(公告)日：2001-08-28

申请号：US08933306

申请日：1997-09-18

申请人： Ryohei Miyagawa ,  Hirofumi Yamashita ,  Michio Sasaki ,  Eiji Oba ,  Nagataka Tanaka ,  Keiji Mabuchi

发明人： Ryohei Miyagawa ,  Hirofumi Yamashita ,  Michio Sasaki ,  Eiji Oba ,  Nagataka Tanaka ,  Keiji Mabuchi

IPC分类号： H01L31062

CPC分类号： H01L27/14643 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14683

摘要： This invention prevents an end portion of the LOCOS region having a large number of defects of an MOS sensor from depletion and thereby reduces the leak current that occurs in the defects in the end portion of the LOCOS region. An n-type layer region is formed in a surface area of a p-type substrate for constituting a photodiode with the p-type layer. A LOCOS region is formed on a p+-type layer in a surface area of the silicon substrate as device separation region by oxidizing part of the silicon substrate. The n-type layer region and the LOCOS region are separated from each other by a predetermined distance. A contact region is formed and separated from the n-type layer region by a distance equal to the size of the gate electrode of the read-out transistor of the MOS sensor. A wiring layer is connected to the contact region. Then, a planarizing layer is formed to cover the n-type layer region, the LOCOS region, the gate electrode and the wiring layer.

摘要翻译： 本发明防止具有大量MOS传感器缺陷的LOCOS区域的端部耗尽，从而减少在LOCOS区域的端部部分的缺陷中发生的漏电流。 在用于构成具有p型层的光电二极管的p型衬底的表面区域中形成n型层区域。 通过氧化硅衬底的一部分，在硅衬底的表面区域中的p +型层上形成LOCOS区域作为器件分离区域。 n型层区域和LOCOS区域彼此分开预定距离。 形成接触区域并与n型层区域分离距离等于MOS传感器的读出晶体管的栅电极的距离。 布线层连接到接触区域。 然后，形成平面化层以覆盖n型层区域，LOCOS区域，栅电极和布线层。

公开(公告)号：US06528342B2

公开(公告)日：2003-03-04

申请号：US09885071

申请日：2001-06-21

申请人： Ryohei Miyagawa ,  Hirofumi Yamashita ,  Michio Sasaki ,  Eiji Oba ,  Nagataka Tanaka ,  Keiji Mabuchi

发明人： Ryohei Miyagawa ,  Hirofumi Yamashita ,  Michio Sasaki ,  Eiji Oba ,  Nagataka Tanaka ,  Keiji Mabuchi

IPC分类号： H01L2100

CPC分类号： H01L27/14643 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14683

摘要： This invention prevents an end portion of the LOCOS region having a large number of defects of an MOS sensor from depletion and thereby reduces the leak current that occurs in the defects in the end portion of the LOCOS region. An n-type layer region is formed in a surface area of a p-type substrate for constituting a photodiode with the p-type layer. A LOCOS region is formed on a p+-type layer in a surface area of the silicon substrate as device separation region by oxidizing part of the silicon substrate. The n-type layer region and the LOCOS region are separated from each other by a predetermined distance. A contact region is formed and separated from the n-type layer region by a distance equal to the size of the gate electrode of the read-out transistor of the MOS sensor. A wiring layer is connected to the contact region. Then, a planarizing layer is formed to cover the n-type layer region, the LOCOS region, the gate electrode and the wiring layer.

摘要翻译： 本发明防止具有大量MOS传感器缺陷的LOCOS区域的端部耗尽，从而减少在LOCOS区域的端部部分的缺陷中发生的漏电流。 在用于构成具有p型层的光电二极管的p型衬底的表面区域中形成n型层区域。 通过氧化硅衬底的一部分，在硅衬底的表面区域中的p +型层上形成LOCOS区域作为器件分离区域。 n型层区域和LOCOS区域彼此分开预定距离。 形成接触区域并与n型层区域分离距离等于MOS传感器的读出晶体管的栅电极的距离。 布线层连接到接触区域。 然后，形成平面化层以覆盖n型层区域，LOCOS区域，栅电极和布线层。

公开(公告)号：US6091449A

公开(公告)日：2000-07-18

申请号：US21940

申请日：1998-02-11

申请人： Yoshiyuki Matsunaga ,  Shinji Ohsawa ,  Nobuo Nakamura ,  Hirofumi Yamashita ,  Hiroki Miura ,  Nagataka Tanaka ,  Keiji Mabuchi

发明人： Yoshiyuki Matsunaga ,  Shinji Ohsawa ,  Nobuo Nakamura ,  Hirofumi Yamashita ,  Hiroki Miura ,  Nagataka Tanaka ,  Keiji Mabuchi

IPC分类号： H01L27/14 ,  H01L27/146 ,  H04N5/335 ,  H04N5/357 ,  H04N5/361 ,  H04N5/363 ,  H04N5/369 ,  H04N5/374 ,  H04N5/3745 ,  H04N5/378 ,  H04N3/14 ,  H01L31/062

CPC分类号： H04N5/37457 ,  H01L27/14643 ,  H04N5/3651 ,  H04N5/3741

摘要： In an MOS-type solid-state imaging apparatus, plural unit cells are arranged in a two-dimensional matrix, unit cells in one horizontal line (row) are selected by a vertical address circuit, and vertical signal lines to which outputs from the unit cells in one vertical line (column) are supplied are selected by a horizontal address circuit, thereby sequentially outputting signals from the respective unit cells. Each unit cell includes an output circuit for outputting an output from a photodiode to a vertical signal line, photodiodes connected in parallel to the output circuit, and a selection switch for selecting one of the photodiodes and connecting it to the output circuit. The output circuit comprising an amplification transistor for amplifying an output from the photodiode, a selection transistor for selecting the unit cell, and a reset transistor for resetting the charge in the photodiode.

摘要翻译： 在MOS型固体摄像装置中，将多个单位电池配置为二维矩阵，通过垂直地址电路选择一条水平线（行）的单位电池，并将来自该单元的输出的垂直信号线 提供一条垂直线（列）中的单元由水平地址电路选择，从而顺序地输出来自各个单位单元的信号。 每个单位单元包括用于输出从光电二极管到垂直信号线的输出，与输出电路并联连接的光电二极管的输出电路和用于选择一个光电二极管并将其连接到输出电路的选择开关。 输出电路包括用于放大来自光电二极管的输出的放大晶体管，用于选择单元的选择晶体管，以及用于复位光电二极管中的电荷的复位晶体管。

公开(公告)号：US07113213B2

公开(公告)日：2006-09-26

申请号：US09927632

申请日：2001-08-13

申请人： Yoshiyuki Matsunaga ,  Keiji Mabuchi ,  Shinji Ohsawa ,  Nobuo Nakamura ,  Hirofumi Yamashita ,  Hiroki Miura ,  Nagataka Tanaka

发明人： Yoshiyuki Matsunaga ,  Keiji Mabuchi ,  Shinji Ohsawa ,  Nobuo Nakamura ,  Hirofumi Yamashita ,  Hiroki Miura ,  Nagataka Tanaka

IPC分类号： H04N3/14

CPC分类号： H04N5/2173 ,  H01L27/14609 ,  H01L27/14643 ,  H01L27/14645 ,  H04N5/3575 ,  H04N5/365 ,  H04N5/3658 ,  H04N5/374 ,  H04N5/3745 ,  H04N5/37452 ,  H04N5/378

摘要： An image system uses an amplification-type MOS sensor for receiving an optical image through a photoelectric conversion element, converting the image into an electrical signal, and outputting the signal. This system includes an optical system for guiding this optical image to a predetermined position, an image processing means having a sensor for photoelectrically converting the optical image guided to the predetermined position by the optical system into an electrical signal in units of pixels, and a signal process device for processing an output from the image processing means, and outputting the resultant data. The sensor includes a photoelectric conversion element placed at the predetermined position, an output circuit having an amplification MOS transistor connected to the photoelectric conversion element and serving to amplify and output an output from the photoelectric conversion element at a first timing and output noise independent of the output from the photoelectric conversion element at a second timing, and a noise reduction circuit, connected to the output of the output circuit, having the same impedance at the first and second timings when viewed from the output circuit, and obtaining the difference between outputs from the output circuits at the first and second timings. By setting the same impedance, proper noise cancellation can be performed.

摘要翻译： 图像系统使用放大型MOS传感器，用于通过光电转换元件接收光学图像，将图像转换为电信号，并输出信号。 该系统包括用于将该光学图像引导到预定位置的光学系统，具有用于将由光学系统引导到预定位置的光学图像光电转换为以像素为单位的电信号的传感器的图像处理装置，以及信号 处理装置，用于处理来自图像处理装置的输出，并输出结果数据。 传感器包括放置在预定位置的光电转换元件，输出电路，其具有连接到光电转换元件的放大MOS晶体管，用于在第一定时放大并输出来自光电转换元件的输出，并且输出独立于 在第二定时从光电转换元件输出的噪声降低电路和连接到输出电路的输出的噪声降低电路，在从输出电路观察时在第一和第二定时具有相同的阻抗，并且获得来自 输出电路在第一和第二定时。 通过设置相同的阻抗，可以执行适当的噪声消除。

公开(公告)号：US09402038B2

公开(公告)日：2016-07-26

申请号：US13482631

申请日：2012-05-29

申请人： Keiji Mabuchi

发明人： Keiji Mabuchi

IPC分类号： H04N5/217 ,  H04N5/335 ,  H01L27/00 ,  H01J40/14 ,  H04N5/353 ,  H04N5/359 ,  H04N5/3745

CPC分类号： H04N5/353 ,  H04N5/359 ,  H04N5/3591 ,  H04N5/37457

摘要： A solid-state imaging device includes: a pixel array section including an array of pixels in a two-dimensional matrix, the pixels including a photoelectric conversion section configured to generate signal charges in accordance with an amount of light, a discharge section configured to receive an overflow of signal charges exceeding a saturation amount of charges during an exposure period, at least a first charge accumulation section configured to receive the signal charges generated by the photoelectric conversion section after the exposure period, and a second charge accumulation section configured to receive the signal charges exceeding the saturation amount of charges, and a plurality of pixel transistors reading the signal charges; and a scanning section configured to scan the pixels so that accumulation periods for all the pixels are simultaneous in an accumulation period of the signal charges, and to selectively scan the pixels in sequence.

摘要翻译： 固态成像装置包括：像素阵列部，包括二维矩阵中的像素阵列，所述像素包括被配置为根据光量产生信号电荷的光电转换部，被配置为接收的放电部 信号电荷的溢出在曝光期间超过电荷的饱和量，至少第一电荷蓄积部被配置为在曝光期后接收由光电转换部生成的信号电荷，第二电荷累积部被配置为接收 信号电荷超过饱和电荷量，以及读取信号电荷的多个像素晶体管; 以及扫描部，被配置为扫描像素，使得所有像素的累积周期在信号电荷的累积周期中同时进行，并且依次选择性地扫描像素。

公开(公告)号：US20160165162A1

公开(公告)日：2016-06-09

申请号：US14925333

申请日：2015-10-28

申请人： Keiji Mabuchi ,  Eiichi FUNATSU ,  Kasai Masanori

发明人： Keiji Mabuchi ,  Eiichi FUNATSU ,  Kasai Masanori

IPC分类号： H04N5/378 ,  H04N5/225 ,  H04N5/369 ,  H04N5/376

CPC分类号： H04N5/378 ,  H04N5/2253 ,  H04N5/3559 ,  H04N5/365 ,  H04N5/3698 ,  H04N5/37213 ,  H04N5/374 ,  H04N5/376 ,  H04N5/3765

摘要： A CMOS sensor has unit pixels each structured by a light receiving element and three transistors, to prevent against the phenomenon of saturation shading and the reduction of dynamic range. The transition time (fall time), in switching off the voltage on a drain line shared in all pixels, is given longer than the transition time in turning of any of the reset line and the transfer line. For this reason, the transistor constituting a DRN drive buffer is made proper in its W/L ratio. Meanwhile, a control resistance or current source is inserted on a line to the GND, to make proper the operation current during driving. This reduces saturation shading amount. By making a reset transistor in a depression type, the leak current to a floating diffusion is suppressed to broaden the dynamic range.

摘要翻译： CMOS传感器具有由光接收元件和三个晶体管构成的单位像素，以防止饱和阴影现象和动态范围的减小。 在关闭所有像素中共享的漏极线上的电压时，转换时间（下降时间）的长度大于转动任何复位线和传输线的转换时间。 因此，构成DRN驱动缓冲器的晶体管的W / L比是合适的。 同时，将控制电阻或电流源插入到GND的一条线上，以使驱动期间的操作电流正确。 这样可以减少饱和度遮蔽量。 通过使抑制型复位晶体管成为抑制浮动扩散的漏电流，扩大动态范围。

公开(公告)号：US09179073B2

公开(公告)日：2015-11-03

申请号：US13426719

申请日：2012-03-22

申请人： Keiji Mabuchi

发明人： Keiji Mabuchi

IPC分类号： H04N5/235 ,  H04N5/355 ,  H04N5/378

CPC分类号： H04N5/378 ,  H04N5/2351 ,  H04N5/35545

摘要： A solid-state imaging device is provided that includes a pixel array section having pixels which detect a physical quantities that are arranged in two dimensions of a matrix; an Analog-Digital (AD) converting section that performs AD conversion for a plurality of channels of analog pixel signals which are read-out from the pixel array section; and a control section that sets quantized units AD-converted by the AD conversion section according to a gain setting of the unit pixel signal, where the control section determines a grayscale number of digital outputs AD-converted for at least one channel of the unit pixel signals according to the gain setting of the pixel signal.

摘要翻译： 提供一种固态成像装置，其包括像素阵列部分，该像素阵列部分具有检测布置在矩阵的二维中的物理量的像素; 模拟数字（AD）转换部分，对从像素阵列部分读出的多个模拟像素信号进行AD转换; 以及控制部分，其根据单位像素信号的增益设置来设置由AD转换部分AD转换的量化单元，其中控制部分确定对于单位像素的至少一个通道AD转换的数字输出的灰度级数 信号根据像素信号的增益设置。

公开(公告)号：US09041827B2

公开(公告)日：2015-05-26

申请号：US11655201

申请日：2007-01-19

申请人： Hiroki Sato ,  Keiji Mabuchi ,  Nobuo Nakamura ,  Tetsuya Iizuka

发明人： Hiroki Sato ,  Keiji Mabuchi ,  Nobuo Nakamura ,  Tetsuya Iizuka

IPC分类号： H04N5/228 ,  H04N5/335 ,  H04N3/14

CPC分类号： H04N5/335

摘要： The invention makes it possible to perform effective A/D conversion on pixel signals read from a pixel array part, to achieve a reduction in power consumption and reductions in the size and the price of an image pickup device as well as simplification of the construction of the device, and to realize a high-quality image output. The device includes an pixel array part having a plurality of unit pixels, a CDS (correlated double sampling) circuit, and an A/D converter. A pixel signal read from a pixel array part via a signal line is subjected to CDS processing (noise elimination processing) in the CDS circuit, and then this pixel signal is inputted into the A/D converter which performs A/D conversion on the pixel signal. The A/D converter includes a ΔΣ modulator and a digital filter to perform highly accurate A/D conversion. The invention can also be applied to a construction in which an A/D converter is provided at the front stage of the CDS circuit.

摘要翻译： 本发明使得可以对从像素阵列部分读取的像素信号进行有效的A / D转换，以实现图像拾取装置的功耗的降低和尺寸和价格的降低以及简化的 该设备，并实现高质量的图像输出。 该装置包括具有多个单位像素的像素阵列部分，CDS（相关双采样）电路和A / D转换器。 经由信号线从像素阵列部分读取的像素信号在CDS电路中进行CDS处理（噪声消除处理），然后将该像素信号输入到对像素进行A / D转换的A / D转换器 信号。 A / D转换器包括＆Dgr＆amp; 调制器和数字滤波器，以执行高精度的A / D转换。 本发明也可以应用于在CDS电路的前级设置A / D转换器的结构。

公开(公告)号：US08934038B2

公开(公告)日：2015-01-13

申请号：US13450236

申请日：2012-04-18

申请人： Keiji Mabuchi ,  Koichi Shiono

发明人： Keiji Mabuchi ,  Koichi Shiono

IPC分类号： H04N3/14 ,  H04N5/335 ,  H04N5/345 ,  H04N5/343 ,  H04N5/347 ,  H04N5/376 ,  H04N9/04 ,  H04N5/374

CPC分类号： H04N5/343 ,  H01L27/14605 ,  H01L27/14621 ,  H01L27/14643 ,  H01L27/14812 ,  H04N5/3456 ,  H04N5/3458 ,  H04N5/347 ,  H04N5/374 ,  H04N5/3765 ,  H04N5/378 ,  H04N9/045 ,  H04N9/04511 ,  H04N2209/045

摘要： There is used an XY address type solid-state image pickup element (for example, a MOS type image sensor) in which two rows and two columns are made a unit, and color filters having a color coding of repetition of the unit (repetition of two verticals (two horizontals) are arranged, and when a thinning-out read mode is specified, a clock frequency of a system is changed to 1/9, and on the basis of the changed clock frequency, a pixel is selected every three pixels in both a row direction and a column direction to successively read out a pixel signal.

摘要翻译： 使用其中两行和两列成为一个单元的XY地址类型的固态图像拾取元件（例如，MOS型图像传感器），以及具有单元重复的颜色编码的滤色器（重复 布置两个垂直线（两个水平线），当指定了稀疏读出模式时，系统的时钟频率变为1/9，并且基于改变的时钟频率，每3个像素选择一个像素 在行方向和列方向上，以连续地读出像素信号。