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    RFID integrated circuits with large contact pads
    1.
    发明授权
    RFID integrated circuits with large contact pads 有权

    公开(公告)号：US10331993B1

    公开(公告)日：2019-06-25

    申请号：US14956412

    申请日：2015-12-02

    申请人： Impinj, Inc.

    发明人： Ronald L. Koepp ,  Harley K. Heinrich ,  Christopher J. Diorio ,  Tan Mau Wu

    IPC分类号： G06K19/06 ,  G06K19/077 ,  H01L21/768 ,  H01L23/528

    摘要： A Radio Frequency Identification (RFID) integrated circuit (IC) is at least partially covered by a repassivation layer that is, in turn, at least partially covered by a large, electrically conductive contact pad. The repassivation layer is disposed so as to leave uncovered at least one IC contact. The large contact pad is disposed so as to cover the IC IC contact. The large contact pad forms a first galvanic coupling to the IC contact and a second galvanic coupling to a tag antenna. The surface area of the first galvanic coupling is substantially smaller than the surface area of the second galvanic coupling.

    RFID integrated circuits with contact islands
    6.
    发明授权
    RFID integrated circuits with contact islands 有权
    RFID集成电路与接触岛

    公开(公告)号：US09495631B1

    公开(公告)日：2016-11-15

    申请号：US13945490

    申请日：2013-07-18

    申请人： Impinj, Inc.

    发明人： Ronald L. Koepp ,  Harley K. Heinrich ,  Christopher J. Diorio ,  Tan Mau Wu

    IPC分类号： G06K19/06 ,  G06K19/077

    CPC分类号： G06K19/07752 ,  G06K19/07754 ,  G06K19/07786 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2924/00014 ,  H01L2924/07811 ,  H01L2924/00 ,  H01L2224/0401

    摘要： A Radio Frequency Identification (RFID) IC may have raised contact islands that include conductive contact pads covering a repassivation layer. The raised contact islands are formed by removing part or all of the repassivation material surrounding the raised contact islands. The repassivation material that is not covered and protected by the contact pads may be removed by a strip process that also removes a masking layer used for IC etching. Singulated RFID ICs may be assembled into an RFID tag using a B-stage adhesive that is applied to the ICs and then partially cured. The ICs are deposited onto preheated inlays. The preheated inlays cause the B-stage adhesive on the ICs to bind to the inlays.

    摘要翻译： 射频识别（RFID）IC可以具有凸起的接触岛，其包括覆盖再钝化层的导电接触焊盘。 通过去除围绕凸起的接触岛的部分或全部再钝化材料来形成隆起的接触岛。 未被接触焊盘覆盖和保护的再钝化材料可以通过也去除用于IC蚀刻的掩模层的剥离处理来去除。 单独的RFID IC可以使用施加到IC然后部分固化的B级粘合剂组装成RFID标签。 IC沉积在预热的嵌体上。 预热的嵌体使IC上的B级粘合剂与嵌体粘合。

    RFID tag assembly methods
    7.
    发明授权
    RFID tag assembly methods 有权
    RFID标签装配方法

    公开(公告)号：US09317799B1

    公开(公告)日：2016-04-19

    申请号：US14141406

    申请日：2013-12-26

    申请人： Impinj, Inc.

    发明人： Ronald L. Koepp ,  Ronald A. Oliver ,  William T. Colleran ,  Yanjun Ma ,  Jay M. Fassett ,  Vincent C. Moretti

    IPC分类号： H01Q1/38 ,  G06K19/077 ,  G06K19/073 ,  H01P11/00

    CPC分类号： H01Q23/00 ,  G06K19/07756 ,  H01Q1/2208

    摘要： RFID tags are assembled through affixing an antenna to an integrated circuit (IC) by forming one or more capacitors coupling the antenna and the IC with the dielectric material of the capacitor(s) including a non-conductive covering layer of the IC, a non-conductive covering layer of the antenna such as an oxide layer, and/or an additionally formed dielectric layer. Top and bottom plates of the capacitor(s) are formed by the antenna traces and one or more patches on a top surface of the IC.

    摘要翻译： RFID标签通过将天线和IC的电容器与电容器的电介质材料形成一个或多个电容器组成，该电容器包括IC的非导电覆盖层，非集成电路 天线的导电覆盖层，例如氧化物层，和/或另外形成的电介质层。 电容器的顶板和底板由天线迹线和IC顶表面上的一个或多个贴片形成。

    RFID tag assembly methods
    9.
    发明授权
    RFID tag assembly methods 有权

    公开(公告)号：US10116033B1

    公开(公告)日：2018-10-30

    申请号：US15041041

    申请日：2016-02-11

    申请人： Impinj, Inc.

    发明人： Ronald L. Koepp ,  Ronald A. Oliver ,  William T. Colleran ,  Yanjun Ma ,  Jay M. Fassett ,  Vincent C. Moretti

    IPC分类号： H01P11/00 ,  G06K19/077

    摘要： RFID tags are assembled through affixing an antenna to an integrated circuit (IC) by forming one or more capacitors coupling the antenna and the IC with the dielectric material of the capacitor(s) including a non-conductive covering layer of the IC, a non-conductive covering layer of the antenna such as an oxide layer, and/or an additionally formed dielectric layer. Top and bottom plates of the capacitor(s) are formed by the antenna traces and one or more patches on a top surface of the IC.