公开(公告)号：US20230170316A1

公开(公告)日：2023-06-01

申请号：US17537822

申请日：2021-11-30

Applicant: Infineon Technologies AG

Inventor： Ivan Nikitin ,  Adrian Lis ,  Peter Scherl ,  Achim Althaus

IPC: H01L23/00 ,  H05K1/11 ,  H01L23/498

CPC classification number: H01L24/05 ,  H05K1/11 ,  H01L24/04 ,  H01L23/49838 ,  H01L24/40 ,  H01L2224/04034 ,  H01L2224/05556 ,  H01L2224/05552 ,  H01L2224/0603 ,  H01L24/06 ,  H01L2224/40475 ,  H01L23/49811 ,  H05K1/18

Abstract: Described are solder stop features for electronic devices. An electronic device may include an electrically insulative substrate, a metallization on the electrically insulative substrate, a metal structure attached to a first main surface of the metallization via a solder joint, and a concavity formed in a sidewall of the metallization. The concavity is adjacent at least part of the solder joint and forms a solder stop. A first section of the metal structure is spaced apart from both the metallization and solder joint in a vertical direction that is perpendicular to the first main surface of the metallization. A linear dimension of the concavity in a horizontal direction that is coplanar with the metallization is at least twice the distance by which the first section of the metal structure is spaced apart from the first main surface of the metallization in the vertical direction. Additional solder stop embodiments are described.

公开(公告)号：US20250006601A1

公开(公告)日：2025-01-02

申请号：US18342394

申请日：2023-06-27

Applicant: Infineon Technologies AG

Inventor： Achim Althaus ,  Andreas Groove ,  Christoph Liebl

IPC: H01L23/495 ,  H01L23/00 ,  H01L23/31 ,  H01L25/07

Abstract: A power semiconductor module includes an AC bus bar having a first side that faces a first substrate and a second side that faces a second substrate. A first power transistor die has a drain terminal connected to a first metallic region of the first substrate and a source terminal connected to the first side of the AC bus bar. A second power transistor die has a drain terminal connected to the second side of the AC bus bar and a source terminal connected to a first metallic region of the second substrate. First and second DC bus bars are connected to the first metallic region of the respective substrates, vertically overlap one another, and protrude from a first side of a mold body that encapsulates the power transistor dies. The AC bus bar protrudes from a different side of the mold body as the DC bus bars.