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公开(公告)号：US20180088042A1
公开(公告)日：2018-03-29
申请号：US15716598
申请日：2017-09-27
发明人： Naveen Goud GANAGONA , Moriz JELINEK , Helmut OEFNER , Hans-Joachim SCHULZE , Werner SCHUSTEREDER
IPC分类号： G01N21/3563
CPC分类号： G01N21/3563 , G01N2021/3568 , G01N2021/3572 , G01N2021/3595
摘要： A method of determining the carbon content in a silicon sample may include: generating electrically active polyatomic complexes within the silicon sample. Each polyatomic complex may include at least one carbon atom. The method may further include: determining a quantity indicative of the content of the generated polyatomic complexes in the silicon sample, and determining the carbon content in the silicon sample from the determined quantity.
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公开(公告)号：US20230238442A1
公开(公告)日：2023-07-27
申请号：US18097656
申请日：2023-01-17
发明人： Ravi Keshav JOSHI , Romain ESTEVE , Saurabh ROY , Bernhard GOLLER , Werner SCHUSTEREDER , Kristijan Luka MLETSCHNIG
IPC分类号： H01L29/45 , H01L29/417 , H01L23/528 , H01L29/40 , H01L21/321
CPC分类号： H01L29/45 , H01L29/41741 , H01L23/528 , H01L29/401 , H01L21/321
摘要： A semiconductor device includes a semiconductor substrate and a metal nitride layer above the semiconductor substrate. The metal nitride layer forms at least one interface region with the semiconductor substrate. The at least one interface region includes a first portion of the semiconductor substrate, a first portion of the metal nitride layer, and an interface between the first portion of the semiconductor substrate and the first portion of the metal nitride layer. A concentration of nitrogen content at the first portion of the metal nitride layer is higher than a concentration of nitrogen content at a second portion, of the metal nitride layer, outside the interface region. A distribution of nitrogen content throughout the metal nitride layer may have a maximum concentration at the first portion of the metal nitride layer. Alternatively and/or additionally, a method for producing such a semiconductor device is provided herein.
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公开(公告)号：US20220262906A1
公开(公告)日：2022-08-18
申请号：US17671838
申请日：2022-02-15
IPC分类号： H01L29/16 , H01L29/423 , H01L21/04 , H01L29/78 , H01L29/66
摘要： A silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) and a method for forming a SiC MOSFET are disclosed. In an example, the method includes forming a gate dielectric that adjoins a body region arranged in a semiconductor body, and forming a gate electrode on the gate dielectric. Forming the gate electrode includes forming a first electrode layer, implanting work function adjusting atoms into the first electrode layer, and forming a second electrode layer on the first electrode layer.
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公开(公告)号：US20230083106A1
公开(公告)日：2023-03-16
申请号：US17476829
申请日：2021-09-16
发明人： Moriz JELINEK , Paul ELLINGHAUS , Axel KOENIG , Caspar LEENDERTZ , Hans-Joachim SCHULZE , Werner SCHUSTEREDER
摘要： A method includes orienting a silicon carbide layer to a first crystal channel direction relative to a first ion beam and implanting phosphorous into the silicon carbide layer using the first ion beam to define a first doped region in the silicon carbide layer. A deviation angle between the first crystal channel direction and the first ion beam is less than ±1° and the first crystal channel direction comprises a direction or a direction.
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公开(公告)号：US20200381253A1
公开(公告)日：2020-12-03
申请号：US16886175
申请日：2020-05-28
摘要： A silicon carbide substrate is provided that includes a drift layer of a first conductivity type and a trench extending from a main surface of the silicon carbide substrate into the drift layer. First dopants are implanted through a first trench sidewall of the trench. The first dopants have a second conductivity type and are implanted at a first implant angle into the silicon carbide substrate, wherein at the first implant angle channeling occurs in the silicon carbide substrate. The first dopants form a first compensation layer extending parallel to the first trench sidewall.
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公开(公告)号：US20230215729A1
公开(公告)日：2023-07-06
申请号：US18090673
申请日：2022-12-29
发明人： Hans-Joachim SCHULZE , Florian Markus GRASSE , Moriz JELINEK , Axel KÖNIG , Gregor LANGER , Bemhard LEITL , Kristijan Luka MLETSCHNIG , Werner SCHUSTEREDER
IPC分类号： H01L21/04 , H01L29/45 , H01L29/06 , H01L21/265
CPC分类号： H01L21/0485 , H01L29/45 , H01L29/06 , H01L21/26513 , H01L29/04
摘要： A method of manufacturing a metal silicide layer comprises performing laser thermal annealing of a surface region of a silicon carbide (SiC) substrate, exposing a surface of a thus obtained silicon layer, depositing a metal layer above the exposed silicon layer, and/or thermally treating a stack of layers, comprising the silicon layer and the metal layer, to form a metal silicide layer. Alternatively and/or additionally, the method may comprise depositing a silicon layer above a SiC substrate, depositing a metal layer, and/or performing laser thermal annealing of the SiC substrate and a stack of layers above the SiC substrate to form a metal silicide layer, wherein the stack of layers comprises the silicon layer and the metal layer. Moreover, a semiconductor device is described, comprising a SiC substrate, a metal silicide layer, and a polycrystalline layer in direct contact with the SiC substrate and the metal silicide layer.
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公开(公告)号：US20210159115A1
公开(公告)日：2021-05-27
申请号：US17104559
申请日：2020-11-25
发明人： Werner SCHUSTEREDER , Alexander BREYMESSER , Mihai DRAGHICI , Tobias Franz Wolfgang HOECHBAUER , Wolfgang LEHNERT , Hans-Joachim SCHULZE , Marko David SWOBODA
IPC分类号： H01L21/762 , H01L21/3115 , H01L21/265 , H01L21/768
摘要： Methods for processing a semiconductor substrate are proposed. An example of a method includes forming cavities in the semiconductor substrate by implanting ions through a first surface of the semiconductor substrate. The cavities define a separation layer in the semiconductor substrate. A semiconductor layer is formed on the first surface of the semiconductor substrate. Semiconductor device elements are formed in the semiconductor layer. The semiconductor substrate is separated along the separation layer into a first substrate part including the semiconductor layer and a second substrate part.
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公开(公告)号：US20230024105A1
公开(公告)日：2023-01-26
申请号：US17869567
申请日：2022-07-20
摘要： The present disclosure relates to methods of manufacturing Ohmic contacts on a silicon carbide (SiC) substrate including providing a 4H—SiC or 6H—SiC substrate, implanting dopants into a surface region of the 4H—SiC or 6H—SiC substrate, annealing the implanted surface regions to form a 3C—SiC layer, and depositing a metal layer on the 3C—SiC layer. An implanting sequence of the implantation of dopants includes a plurality of plasma deposition acts with implantation energy levels including at least two different implantation energy levels. The implantation energy levels and one or more implantation doses of the plurality of plasma deposition acts are selected to form a 3C—SiC layer in the surface region of the 4H—SiC or 6H—SiC substrate during the annealing act. A method of manufacturing a semiconductor device having a structure including at least three layers including a 4H—SiC or 6H—SiC layer, a 3C—SiC layer, and a metal layer, by applying one or more of the techniques described herein, and semiconductor devices obtained with one or more of the techniques described herein are described.
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9.发明申请Method of reducing a sheet resistance in an electronic device, and an electronic device 审中-公开降低电子设备中的薄层电阻的方法以及电子设备公开(公告)号：US20160336226A1
公开(公告)日：2016-11-17
申请号：US15151857
申请日：2016-05-11
发明人： Edward FUERGUT , Irmgard ESCHER-POEPPEL , Stephanie FASSL , Paul GANITZER , Gerhard POEPPEL , Werner SCHUSTEREDER , Harald WIEDENHOFER
IPC分类号： H01L21/768 , H01L21/324 , H01L21/321 , H01L21/268 , H01L23/528 , H01L23/31
CPC分类号： H01L21/324 , H01L21/0455 , H01L21/0485 , H01L21/2254 , H01L21/2258 , H01L21/268 , H01L21/28512 , H01L21/28575 , H01L23/3157
摘要： Various embodiments provide a method of reducing a sheet resistance in an electronic device encapsulated at least partially in an encapsulation material, wherein the method comprises: providing an electronic device comprising a multilayer structure and being at least partially encapsulated by an encapsulation material; and locally introducing energy into the multilayer structure for reducing a sheet resistance.
摘要翻译： 各种实施例提供了一种减少至少部分地封装在封装材料中的电子器件中的薄层电阻的方法，其中所述方法包括：提供包括多层结构并且被封装材料至少部分封装的电子器件; 并且将能量局部地引入到多层结构中以降低薄层电阻。
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