公开(公告)号：US20250056869A1

公开(公告)日：2025-02-13

申请号：US18799436

申请日：2024-08-09

Applicant: Infineon Technologies AG

Inventor： Fabian RASINGER ,  Michael HELL ,  Thomas AICHINGER ,  Alexey MIKHAYLOV

IPC: H01L29/51 ,  H01L23/528 ,  H01L23/532 ,  H01L27/088 ,  H01L29/423

Abstract: A wide band gap semiconductor device is proposed. The wide band gap semiconductor device includes a wide band gap semiconductor body having a first surface and a second surface opposite to the first surface along a vertical direction. A gate electrode structure is arranged in an active transistor area. The gate electrode structure includes a gate electrode and a gate dielectric arranged between the gate electrode and the wide band gap semiconductor body. A gate interconnection structure is arranged outside of the active transistor area. The gate interconnection structure includes an interconnection electrode and an interconnection dielectric arranged between the interconnection electrode and the wide band gap semiconductor body. Dielectric constants of a main dielectric component of at least two of i) a part of the gate interconnection dielectric, or ii) a first part of the gate dielectric, or iii) a second part of the gate dielectric differ from one another.