公开(公告)号：US20200135564A1

公开(公告)日：2020-04-30

申请号：US16176403

申请日：2018-10-31

Applicant: Infineon Technologies AG

Inventor： Markus Zundel ,  Stefan Mieslinger ,  Thomas Ostermann ,  Christian Westermeier ,  Jochen Hilsenbeck ,  Jens Peter Konrath ,  Boris Mayerhofer ,  Anatoly Sotnikov

IPC: H01L21/78 ,  H01L21/04 ,  H01L29/16

Abstract: A semiconductor wafer having a main surface and a rear surface opposite from the main surface is provided. A die singulation preparation step is performed in kerf regions of the semiconductor wafer. The kerf regions enclose a plurality of die sites. The die singulation preparation step includes forming one or more preliminary kerf trenches between at least two immediately adjacent die sites. The method further includes forming active semiconductor devices in the die sites, and singulating the semiconductor wafer in the kerf regions thereby providing a plurality of discrete semiconductor dies from the die sites. The one or more preliminary kerf trenches are unfilled during the singulating, and the singulating includes removing semiconductor material from a surface of the semiconductor wafer that is between opposite facing sidewalls of the one or more preliminary kerf trenches.

公开(公告)号：US20140099777A1

公开(公告)日：2014-04-10

申请号：US13648216

申请日：2012-10-09

Applicant: INFINEON TECHNOLOGIES AG

Inventor： Gunther Mackh ,  Maria Heidenblut ,  Adolf Koller ,  Anatoly Sotnikov

IPC: H01L21/78

CPC classification number: H01L21/78 ,  H01L21/6835 ,  H01L21/6836 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2221/6834

Abstract: In one embodiment, a method of forming a semiconductor device comprises forming a groove on and/or over a first side of a substrate. A dicing layer is formed from a second side of the substrate using a laser process. The second side is opposite the first side. The dicing layer is disposed under the groove within the substrate. The substrate is singulated through the dicing layer.

Abstract translation: 在一个实施例中，形成半导体器件的方法包括在衬底的第一侧上和/或之上形成凹槽。 使用激光工艺从基板的第二侧形成切割层。 第二面与第一面相对。 切割层设置在基板内的凹槽下方。 通过切割层将衬底分离。

公开(公告)号：US10672661B2

公开(公告)日：2020-06-02

申请号：US16176403

申请日：2018-10-31

Applicant: Infineon Technologies AG

Inventor： Markus Zundel ,  Stefan Mieslinger ,  Thomas Ostermann ,  Christian Westermeier ,  Jochen Hilsenbeck ,  Jens Peter Konrath ,  Boris Mayerhofer ,  Anatoly Sotnikov

IPC: H01L21/78 ,  H01L29/16 ,  H01L21/04 ,  H01L29/66 ,  H01L29/06 ,  H01L29/40

Abstract: A semiconductor wafer having a main surface and a rear surface opposite from the main surface is provided. A die singulation preparation step is performed in kerf regions of the semiconductor wafer. The kerf regions enclose a plurality of die sites. The die singulation preparation step includes forming one or more preliminary kerf trenches between at least two immediately adjacent die sites. The method further includes forming active semiconductor devices in the die sites, and singulating the semiconductor wafer in the kerf regions thereby providing a plurality of discrete semiconductor dies from the die sites. The one or more preliminary kerf trenches are unfilled during the singulating, and the singulating includes removing semiconductor material from a surface of the semiconductor wafer that is between opposite facing sidewalls of the one or more preliminary kerf trenches.

公开(公告)号：US09040389B2

公开(公告)日：2015-05-26

申请号：US13648216

申请日：2012-10-09

Applicant: Infineon Technologies AG

Inventor： Gunther Mackh ,  Maria Heidenblut ,  Adolf Koller ,  Anatoly Sotnikov

IPC: H01L21/78 ,  H01L21/683

CPC classification number: H01L21/78 ,  H01L21/6835 ,  H01L21/6836 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2221/6834

Abstract: In one embodiment, a method of forming a semiconductor device comprises forming a groove on and/or over a first side of a substrate. A dicing layer is formed from a second side of the substrate using a laser process. The second side is opposite the first side. The dicing layer is disposed under the groove within the substrate. The substrate is singulated through the dicing layer.

Abstract translation: 在一个实施例中，形成半导体器件的方法包括在衬底的第一侧上和/或之上形成凹槽。 使用激光工艺从基板的第二侧形成切割层。 第二面与第一面相对。 切割层设置在基板内的凹槽下方。 通过切割层将衬底分离。