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公开(公告)号：US20140159196A1
公开(公告)日：2014-06-12
申请号：US14180188
申请日：2014-02-13
发明人： Gunther Mackh , Uwe Siedel , Rainer Leuschner
IPC分类号： H01L49/02
CPC分类号： H01L28/10 , H01L21/76898 , H01L23/481 , H01L23/5227 , H01L23/645 , H01L25/0657 , H01L2225/06513 , H01L2225/06527 , H01L2225/06541 , H01L2924/0002 , H01L2924/00
摘要： Through substrate features in semiconductor substrates are described. In one embodiment, the semiconductor device includes a through substrate via disposed in a first region of a semiconductor substrate. A through substrate conductor coil is disposed in a second region of the semiconductor substrate.
摘要翻译： 描述了半导体衬底中的衬底特征。 在一个实施例中，半导体器件包括设置在半导体衬底的第一区域中的贯穿衬底通孔。 贯穿基板导体线圈设置在半导体基板的第二区域中。
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公开(公告)号：US20140117505A1
公开(公告)日：2014-05-01
申请号：US13665501
申请日：2012-10-31
发明人： Gunther Mackh , Adolf Koller
CPC分类号： H01L23/29 , H01L21/78 , H01L23/562 , H01L2924/0002 , H01L2924/00
摘要： A method for manufacturing a plurality of chips comprises the step of providing a wafer comprising a plurality of chip areas separated by one or more dicing lines, wherein the chip areas are arranged on a first main surface, the step of providing a laser absorption layer on a second main surface opposite to the first main surface and the step of providing a backside metal stack on the laser absorption layer. After that a laser light is applied to the laser absorption layer along the dicing lines before the chips are singulated along the dicing lines by using stealth dicing.
摘要翻译： 一种用于制造多个芯片的方法包括提供包括由一个或多个切割线分开的多个芯片区域的晶片的步骤，其中芯片区域布置在第一主表面上，提供激光吸收层的步骤 与第一主表面相对的第二主表面和在激光吸收层上提供背侧金属叠层的步骤。 之后，通过使用隐形切割，沿着切割线将芯片沿着切割线施加到激光吸收层。
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公开(公告)号：US20140099777A1
公开(公告)日：2014-04-10
申请号：US13648216
申请日：2012-10-09
IPC分类号： H01L21/78
CPC分类号： H01L21/78 , H01L21/6835 , H01L21/6836 , H01L2221/68327 , H01L2221/68336 , H01L2221/6834
摘要： In one embodiment, a method of forming a semiconductor device comprises forming a groove on and/or over a first side of a substrate. A dicing layer is formed from a second side of the substrate using a laser process. The second side is opposite the first side. The dicing layer is disposed under the groove within the substrate. The substrate is singulated through the dicing layer.
摘要翻译： 在一个实施例中，形成半导体器件的方法包括在衬底的第一侧上和/或之上形成凹槽。 使用激光工艺从基板的第二侧形成切割层。 第二面与第一面相对。 切割层设置在基板内的凹槽下方。 通过切割层将衬底分离。
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公开(公告)号：US20130239404A1
公开(公告)日：2013-09-19
申请号：US13888185
申请日：2013-05-06
发明人： Carsten Ahrens , Gunther Mackh , Klemens Pruegl
CPC分类号： H01F27/2804 , H01F5/00 , H01F17/0006 , H01F17/04 , H01F27/255 , H01F41/046 , H01F2017/048 , H01L23/5227 , H01L27/08 , H01L28/10 , H01L2224/45147 , H01L2224/48091 , H01L2224/48247 , H01L2224/48471 , H01L2924/00011 , H01L2924/01047 , H01L2924/30107 , H05K3/10 , Y10T29/49075 , Y10T29/49155 , H01L2924/00014 , H01L2924/00 , H01L2924/01005
摘要： In one embodiment, an inductor has a substrate, a conductor disposed above the substrate and a seamless ferromagnetic material surrounding at least a first portion of the conductor.
摘要翻译： 在一个实施例中，电感器具有衬底，布置在衬底上方的导体和围绕导体的至少第一部分的无缝铁磁材料。
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公开(公告)号：US10600701B2
公开(公告)日：2020-03-24
申请号：US16120485
申请日：2018-09-04
发明人： Gunther Mackh , Gerhard Leschik , Maria Heidenblut
IPC分类号： H01L21/66 , H01L21/683
摘要： A wafer in accordance with various embodiments may include: at least one metallization structure including at least one opening; and at least one separation line region along which the wafer is to be diced, wherein the at least one separation line region intersects the at least one opening.
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公开(公告)号：US20180374766A1
公开(公告)日：2018-12-27
申请号：US16120485
申请日：2018-09-04
发明人： Gunther Mackh , Gerhard Leschik , Maria Heidenblut
IPC分类号： H01L21/66
CPC分类号： H01L22/34 , H01L21/6836 , H01L2221/68336
摘要： A wafer in accordance with various embodiments may include: at least one metallization structure including at least one opening; and at least one separation line region along which the wafer is to be diced, wherein the at least one separation line region intersects the at least one opening.
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公开(公告)号：US09911655B2
公开(公告)日：2018-03-06
申请号：US15390767
申请日：2016-12-27
IPC分类号： H01L29/06 , H01L21/78 , H01L21/683 , H01L21/268 , H01L21/304 , H01L21/3065
CPC分类号： H01L21/78 , H01L21/268 , H01L21/304 , H01L21/3065 , H01L21/6836 , H01L29/0657 , H01L2221/68327 , H01L2221/6834
摘要： A method of dicing a wafer may include forming a plurality of active regions in a wafer, each active region including at least one electronic component, the active regions extending from a first surface of the wafer into the wafer by a height and being separated by separation regions, forming at least one trench in the wafer by plasma etching in at least one separation region from the first surface of the wafer. The at least one trench is extending into the wafer farther than the plurality of active regions. The method may further include processing a remaining portion of the wafer in the separation region to separate the wafer into individual chips.
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8.发明申请公开(公告)号：US20140217577A1
公开(公告)日：2014-08-07
申请号：US13758790
申请日：2013-02-04
发明人： Gunther Mackh
CPC分类号： H01L21/78 , B23K26/40 , B23K26/53 , B23K2103/172 , B23K2103/50 , H01L21/6835 , H01L21/6836 , H01L23/52 , H01L23/544 , H01L2221/68327 , H01L2221/6834 , H01L2223/54426 , H01L2223/54453 , H01L2924/0002 , H01L2924/00
摘要： A device includes a semiconductor chip including a first main face and a second main face, the second main face being the backside of the semiconductor chip. The second main face includes a first region and a second region, the second region being a peripheral region of the second main face. The device further includes a dielectric material arranged over the second region and an electrically conductive material arranged over the first region.
摘要翻译： 一种器件包括：半导体芯片，包括第一主面和第二主面，第二主面是半导体芯片的背面。 第二主面包括第一区域和第二区域，第二区域是第二主面的周边区域。 该装置还包括布置在第二区域上的介电材料和布置在第一区域上的导电材料。
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公开(公告)号：US20140103495A1
公开(公告)日：2014-04-17
申请号：US13651496
申请日：2012-10-15
发明人： Gunther Mackh , Gerhard Leschik , Maria Heidenblut
IPC分类号： H01L23/544 , H01L21/78
CPC分类号： H01L22/34 , H01L21/6836 , H01L2221/68336
摘要： A wafer in accordance with various embodiments may include: at least one metallization structure including at least one opening; and at least one separation line region along which the wafer is to be diced, wherein the at least one separation line region intersects the at least one opening.
摘要翻译： 根据各种实施例的晶片可以包括：至少一个金属化结构，其包括至少一个开口; 以及要切割晶片的至少一个分离线区域，其中所述至少一个分离线区域与所述至少一个开口相交。
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公开(公告)号：US20230130979A1
公开(公告)日：2023-04-27
申请号：US18047467
申请日：2022-10-18
发明人： Gunther Mackh , Martin Brandl , Bernhard Drummer
IPC分类号： H01L21/784 , H01L21/78 , H01L23/00 , B23K26/351
摘要： A semiconductor device includes an active region and a trapping region positioned peripherally with respect to the active region, the trapping region presenting trapping apertures permitting the passage of particles, the trapping apertures being in fluid communication with at least one trapping chamber for trapping the particles. A method for manufacturing the semiconductor devices from one semiconductor wafer presents semiconductor device regions to be singulated along a dicing portion line. The method includes in each semiconductor device region, making a semiconductor device precursor by making or applying at least one active element in an active region, making at least one trapping chamber and making, in a trapping region of the semiconductor device region positioned more peripherally than the active region, trapping apertures in fluid communication with the at least one trapping chamber; and singulating the semiconductor device regions by separating the semiconductor device precursors along the dicing portion lines.
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