公开(公告)号：US10199372B2

公开(公告)日：2019-02-05

申请号：US15631006

申请日：2017-06-23

Applicant: Infineon Technologies AG

Inventor： Ingo Muri ,  Iris Moder ,  Oliver Hellmund ,  Johannes Baumgartl ,  Annette Saenger ,  Barbara Eichinger ,  Doris Sommer ,  Jacob Tillmann Ludwig

IPC: H01L27/108 ,  H01L29/94 ,  H01L29/76 ,  H01L27/06 ,  H01L23/48 ,  H01L21/768

Abstract: An integrated circuit device including a chip die having a first area with a first thickness surrounding a second area with a second thickness, the first thickness is greater than the second thickness, the chip die having a front-side and a back-side, at least one passive electrical component provided at least one of in or over the chip die in the first area on the front-side, and at least one active electrical component provided at least one of in or over the chip die in the second area on the front-side.

公开(公告)号：US20180374843A1

公开(公告)日：2018-12-27

申请号：US15631006

申请日：2017-06-23

Applicant: Infineon Technologies AG

Inventor： Ingo Muri ,  Iris Moder ,  Oliver Hellmund ,  Johannes Baumgartl ,  Annette Saenger ,  Barbara Eichinger ,  Doris Sommer ,  Jacob Tillmann Ludwig

IPC: H01L27/06 ,  H01L23/48 ,  H01L21/768

Abstract: An integrated circuit device including a chip die having a first area with a first thickness surrounding a second area with a second thickness, the first thickness is greater than the second thickness, the chip die having a front-side and a back-side, at least one passive electrical component provided at least one of in or over the chip die in the first area on the front-side, and at least one active electrical component provided at least one of in or over the chip die in the second area on the front-side.