公开(公告)号：US10199372B2

公开(公告)日：2019-02-05

申请号：US15631006

申请日：2017-06-23

Applicant: Infineon Technologies AG

Inventor： Ingo Muri ,  Iris Moder ,  Oliver Hellmund ,  Johannes Baumgartl ,  Annette Saenger ,  Barbara Eichinger ,  Doris Sommer ,  Jacob Tillmann Ludwig

IPC: H01L27/108 ,  H01L29/94 ,  H01L29/76 ,  H01L27/06 ,  H01L23/48 ,  H01L21/768

Abstract: An integrated circuit device including a chip die having a first area with a first thickness surrounding a second area with a second thickness, the first thickness is greater than the second thickness, the chip die having a front-side and a back-side, at least one passive electrical component provided at least one of in or over the chip die in the first area on the front-side, and at least one active electrical component provided at least one of in or over the chip die in the second area on the front-side.

公开(公告)号：US09960268B2

公开(公告)日：2018-05-01

申请号：US15288243

申请日：2016-10-07

Applicant: Infineon Technologies AG

Inventor： Markus Zundel ,  Christian Kampen ,  Jacob Tillmann Ludwig

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/423 ,  H01L29/10 ,  H01L29/08 ,  H01L29/40

CPC classification number: H01L29/7813 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/167 ,  H01L29/404 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7397

Abstract: A semiconductor device includes a drift region of a device structure arranged in a semiconductor layer. The drift region includes at least one first drift region portion and at least one second drift region portion. A majority of dopants within the first drift region portion are a first species of dopants having a diffusivity less than a diffusivity of phosphor within the semiconductor layer. Further, a majority of dopants within the second drift region portion are a second species of dopants. Additionally, the semiconductor device includes a trench extending from a surface of the semiconductor layer into the semiconductor layer. A vertical distance of a border between the first drift region portion and the second drift region portion to the surface of the semiconductor layer is larger than 0.5 times a maximal depth of the trench and less than 1.5 times the maximal depth of the trench.

公开(公告)号：US12107130B2

公开(公告)日：2024-10-01

申请号：US17235989

申请日：2021-04-21

Applicant: Infineon Technologies AG

Inventor： Ingo Muri ,  Johannes Konrad Baumgartl ,  Oliver Hellmund ,  Jacob Tillmann Ludwig ,  Iris Moder ,  Thomas Neidhart ,  Gerhard Schmidt ,  Hans-Joachim Schulze

IPC: H01L29/36 ,  H01L21/02 ,  H01L21/223 ,  H01L21/225 ,  H01L21/265 ,  H01L29/167

CPC classification number: H01L29/36 ,  H01L21/02236 ,  H01L21/02381 ,  H01L21/2236 ,  H01L21/2253 ,  H01L21/26513 ,  H01L29/167

Abstract: A semiconductor device includes a semiconductor substrate having a first dopant and a second dopant. A covalent atomic radius of a material of the semiconductor substrate is i) larger than a covalent atomic radius of the first dopant and smaller than a covalent atomic radius of the second dopant, or ii) smaller than the covalent atomic radius of the first dopant and larger than the covalent atomic radius of the second dopant. The semiconductor device further includes a semiconductor layer on the semiconductor substrate and semiconductor device elements in the semiconductor layer. A vertical concentration profile of the first dopant decreases along at least 80% of a distance between an interface of the semiconductor substrate and the semiconductor layer to a surface of the semiconductor substrate opposite to the interface.

公开(公告)号：US20210265468A1

公开(公告)日：2021-08-26

申请号：US17235989

申请日：2021-04-21

Applicant: Infineon Technologies AG

Inventor： Ingo Muri ,  Johannes Konrad Baumgartl ,  Oliver Hellmund ,  Jacob Tillmann Ludwig ,  Iris Moder ,  Thomas Neidhart ,  Gerhard Schmidt ,  Hans-Joachim Schulze

IPC: H01L29/36 ,  H01L21/223 ,  H01L21/02 ,  H01L21/225 ,  H01L29/167 ,  H01L21/265

Abstract: A semiconductor device includes a semiconductor substrate having a first dopant and a second dopant. A covalent atomic radius of a material of the semiconductor substrate is i) larger than a covalent atomic radius of the first dopant and smaller than a covalent atomic radius of the second dopant, or ii) smaller than the covalent atomic radius of the first dopant and larger than the covalent atomic radius of the second dopant. The semiconductor device further includes a semiconductor layer on the semiconductor substrate and semiconductor device elements in the semiconductor layer. A vertical concentration profile of the first dopant decreases along at least 80% of a distance between an interface of the semiconductor substrate and the semiconductor layer to a surface of the semiconductor substrate opposite to the interface.

公开(公告)号：US11038028B2

公开(公告)日：2021-06-15

申请号：US16406773

申请日：2019-05-08

Applicant: Infineon Technologies AG

Inventor： Ingo Muri ,  Johannes Konrad Baumgartl ,  Oliver Hellmund ,  Jacob Tillmann Ludwig ,  Iris Moder ,  Thomas Christian Neidhart ,  Gerhard Schmidt ,  Hans-Joachim Schulze

IPC: H01L29/36 ,  H01L21/223 ,  H01L21/02 ,  H01L21/225 ,  H01L29/167 ,  H01L21/265

Abstract: A method of manufacturing a semiconductor device includes providing a semiconductor substrate having opposing first and second main surfaces and first and second dopants. A covalent atomic radius of a material of the substrate is i) larger than a covalent atomic radius of the first dopant and smaller than that of the second dopant, or ii) smaller than the covalent atomic radius of the first dopant and larger than that of the second dopant. A vertical extension of the first dopant into the substrate from the first main surface ends at a bottom of a substrate portion at a first vertical distance to the first main surface. The method further includes forming a semiconductor layer on the first main surface, forming semiconductor device elements in the semiconductor layer, and reducing a thickness of the substrate by removing material from the second main surface at least up to the substrate portion.

公开(公告)号：US20180374843A1

公开(公告)日：2018-12-27

申请号：US15631006

申请日：2017-06-23

Applicant: Infineon Technologies AG

Inventor： Ingo Muri ,  Iris Moder ,  Oliver Hellmund ,  Johannes Baumgartl ,  Annette Saenger ,  Barbara Eichinger ,  Doris Sommer ,  Jacob Tillmann Ludwig

IPC: H01L27/06 ,  H01L23/48 ,  H01L21/768

Abstract: An integrated circuit device including a chip die having a first area with a first thickness surrounding a second area with a second thickness, the first thickness is greater than the second thickness, the chip die having a front-side and a back-side, at least one passive electrical component provided at least one of in or over the chip die in the first area on the front-side, and at least one active electrical component provided at least one of in or over the chip die in the second area on the front-side.

公开(公告)号：US20170110572A1

公开(公告)日：2017-04-20

申请号：US15288243

申请日：2016-10-07

Applicant: Infineon Technologies AG

Inventor： Markus Zundel ,  Christian Kampen ,  Jacob Tillmann Ludwig

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/423 ,  H01L29/10

CPC classification number: H01L29/7813 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/167 ,  H01L29/404 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7397

Abstract: A semiconductor device includes a drift region of a device structure arranged in a semiconductor layer. The drift region includes at least one first drift region portion and at least one second drift region portion. A majority of dopants within the first drift region portion are a first species of dopants having a diffusivity less than a diffusivity of phosphor within the semiconductor layer. Further, a majority of &pants within the second drift region portion are a second species of dopants. Additionally, the semiconductor device includes a trench extending from a surface of the semiconductor layer into the semiconductor layer. A vertical distance of a border between the first drift region portion and the second drift region portion to the surface of the semiconductor layer is larger than 0.5 times a maximal depth of the trench and less than 1.5 times the maximal depth of the trench.