公开(公告)号：US20250062175A1

公开(公告)日：2025-02-20

申请号：US18802475

申请日：2024-08-13

Applicant: Infineon Technologies AG

Inventor： Charles Rimbert-Riviere ,  Georg Troska ,  Lydia Lottspeich ,  Martin Goldammer ,  Ulrich Wilke ,  Benedikt Domes ,  Lars Böwer

IPC: H01L23/31 ,  H01L23/00 ,  H01L23/29 ,  H01L25/07

Abstract: A method for producing a substrate for a semiconductor module includes: forming a first electrically conductive layer on a first side of a dielectric insulation layer; structuring the first electrically conductive layer by creating one or more incisions through the first electrically conductive layer that extend from an upper surface of the first electrically conductive layer down to the dielectric insulation layer, thereby completely separating different sections of the first electrically conductive layer; and forming a passivation layer covering the entire upper surface of the structured first electrically conductive layer.