公开(公告)号：US20210305062A1

公开(公告)日：2021-09-30

申请号：US17202849

申请日：2021-03-16

Applicant: Infineon Technologies AG

Inventor： Charles Rimbert-Riviere ,  Martin Goldammer ,  Lydia Lottspeich ,  Ulrich Wilke

IPC: H01L21/48 ,  H01L23/498

Abstract: A method for forming a semiconductor substrate arrangement includes: forming a mask on a semiconductor substrate, the semiconductor substrate including and a metallization layer arranged on an insulation layer, the metallization layer arranged between the mask and insulation layer; forming a layer of electrically conductive coating on the metallization layer, the electrically conductive coating formed in at least one opening of the mask on regions of the metallization layer that are not covered by the mask; and after forming the electrically conductive coating, removing the mask. Forming the mask includes either applying an even layer of material on the metallization layer, or applying the material of the mask on the metallization layer such that the thickness of the mask in a region adjacent to edges of the mask is greater than the thickness of the regions of the mask further away from the edges.

公开(公告)号：US20250062175A1

公开(公告)日：2025-02-20

申请号：US18802475

申请日：2024-08-13

Applicant: Infineon Technologies AG

Inventor： Charles Rimbert-Riviere ,  Georg Troska ,  Lydia Lottspeich ,  Martin Goldammer ,  Ulrich Wilke ,  Benedikt Domes ,  Lars Böwer

IPC: H01L23/31 ,  H01L23/00 ,  H01L23/29 ,  H01L25/07

Abstract: A method for producing a substrate for a semiconductor module includes: forming a first electrically conductive layer on a first side of a dielectric insulation layer; structuring the first electrically conductive layer by creating one or more incisions through the first electrically conductive layer that extend from an upper surface of the first electrically conductive layer down to the dielectric insulation layer, thereby completely separating different sections of the first electrically conductive layer; and forming a passivation layer covering the entire upper surface of the structured first electrically conductive layer.

公开(公告)号：US12205826B2

公开(公告)日：2025-01-21

申请号：US17202849

申请日：2021-03-16

Applicant: Infineon Technologies AG

Inventor： Charles Rimbert-Riviere ,  Martin Goldammer ,  Lydia Lottspeich ,  Ulrich Wilke

IPC: H01L21/48 ,  H01L23/00 ,  H01L23/498

Abstract: A method for forming a semiconductor substrate arrangement includes: forming a mask on a semiconductor substrate, the semiconductor substrate including and a metallization layer arranged on an insulation layer, the metallization layer arranged between the mask and insulation layer; forming a layer of electrically conductive coating on the metallization layer, the electrically conductive coating formed in at least one opening of the mask on regions of the metallization layer that are not covered by the mask; and after forming the electrically conductive coating, removing the mask. Forming the mask includes either applying an even layer of material on the metallization layer, or applying the material of the mask on the metallization layer such that the thickness of the mask in a region adjacent to edges of the mask is greater than the thickness of the regions of the mask further away from the edges.