公开(公告)号：US20200321295A1

公开(公告)日：2020-10-08

申请号：US16841298

申请日：2020-04-06

Applicant: Infineon Technologies AG

Inventor： Walter HARTNER ,  Francesca ARCIONI ,  Birgit HEBLER ,  Martin Richard NIESSNER ,  Claus WAECHTER ,  Maciej WOJNOWSKI

IPC: H01L23/00 ,  H01L23/522

Abstract: A semiconductor device comprises a semiconductor chip having a radio-frequency circuit and a radio-frequency terminal, an external radio-frequency terminal, and a non-galvanic connection arranged between the radio-frequency terminal of the semiconductor chip and the external radio-frequency terminal, wherein the non-galvanic connection is designed to transmit a radio-frequency signal.