公开(公告)号：US20200331748A1

公开(公告)日：2020-10-22

申请号：US16387918

申请日：2019-04-18

Applicant: Infineon Technologies AG

Inventor： Florian BRANDL ,  Christian GEISSLER ,  Robert GRUENBERGER ,  Claus WAECHTER ,  Bernhard WINKLER

IPC: B81B7/00 ,  B81C1/00 ,  G01L1/18 ,  G01L1/14

Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate having a first surface and a second surface arranged opposite to the first surface; a stress-sensitive sensor disposed at the first surface of the substrate, where the stress-sensitive sensor is sensitive to mechanical stress; a stress-decoupling trench that has a vertical extension that extends from the first surface into the substrate, where the stress-decoupling trench vertically extends partially into the substrate towards the second surface although not completely to the second surface; and a plurality of particle filter trenches that vertically extend from the second surface into the substrate, wherein each of the plurality of particle filter trenches have a longitudinal extension that extends orthogonal to the vertical extension of the stress-decoupling trench.

公开(公告)号：US20190198455A1

公开(公告)日：2019-06-27

申请号：US16227427

申请日：2018-12-20

Applicant: Infineon Technologies AG

Inventor： Walter HARTNER ,  Christian GEISSLER ,  Thomas KILGER ,  Johannes LODERMEYER ,  Franz-Xaver MUEHLBAUER ,  Martin Richard NIESSNER ,  Claus WAECHTER

IPC: H01L23/00 ,  H01L23/66 ,  H01L23/31 ,  H01L21/56 ,  H01Q1/22

CPC classification number: H01L23/562 ,  H01L21/563 ,  H01L23/3157 ,  H01L23/66 ,  H01L2223/6677 ,  H01Q1/2283

Abstract: A semiconductor apparatus comprises: a circuit board; a semiconductor package having a main surface, wherein the semiconductor package is arranged on the circuit board and the main surface faces the circuit board; a radio-frequency line element of the semiconductor package, which radio-frequency line element is arranged on the main surface or inside the semiconductor package, wherein the radio-frequency line element is designed to transmit a signal at a frequency of greater than 10 GHz; and an underfiller material arranged between the circuit board and the semiconductor package, wherein the radio-frequency line element and the underfiller material do not overlap in an orthogonal projection onto the main surface.

公开(公告)号：US20210032097A1

公开(公告)日：2021-02-04

申请号：US17076250

申请日：2020-10-21

Applicant: Infineon Technologies AG

Inventor： Florian BRANDL ,  Christian GEISSLER ,  Robert GRUENBERGER ,  Claus WAECHTER ,  Bernhard WINKLER

IPC: B81B7/00 ,  B81C1/00 ,  G01L1/18 ,  G01L1/14

Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate having a first surface and a second surface arranged opposite to the first surface; a stress-sensitive sensor disposed at the first surface of the substrate, where the stress-sensitive sensor is sensitive to mechanical stress; a stress-decoupling trench that has a vertical extension that extends from the first surface into the substrate, where the stress-decoupling trench vertically extends partially into the substrate towards the second surface although not completely to the second surface; and a plurality of particle filter trenches that vertically extend from the second surface into the substrate, wherein each of the plurality of particle filter trenches have a longitudinal extension that extends orthogonal to the vertical extension of the stress-decoupling trench.

公开(公告)号：US20200321295A1

公开(公告)日：2020-10-08

申请号：US16841298

申请日：2020-04-06

Applicant: Infineon Technologies AG

Inventor： Walter HARTNER ,  Francesca ARCIONI ,  Birgit HEBLER ,  Martin Richard NIESSNER ,  Claus WAECHTER ,  Maciej WOJNOWSKI

IPC: H01L23/00 ,  H01L23/522

Abstract: A semiconductor device comprises a semiconductor chip having a radio-frequency circuit and a radio-frequency terminal, an external radio-frequency terminal, and a non-galvanic connection arranged between the radio-frequency terminal of the semiconductor chip and the external radio-frequency terminal, wherein the non-galvanic connection is designed to transmit a radio-frequency signal.