公开(公告)号：US20160111528A1

公开(公告)日：2016-04-21

申请号：US14887520

申请日：2015-10-20

Applicant: Infineon Technologies AG

Inventor： Hans-Joachim Schulze ,  Christian Jaege ,  Franz Josef Niedernostheide ,  Roman Baburske ,  Andre Rainer Stegner ,  Antonio Vellei

IPC: H01L29/739 ,  H01L29/66 ,  H01L29/10 ,  H01L29/167 ,  H01L29/06 ,  H01L29/08

CPC classification number: H01L29/7395 ,  H01L29/0607 ,  H01L29/0696 ,  H01L29/0813 ,  H01L29/0821 ,  H01L29/0834 ,  H01L29/1095 ,  H01L29/167 ,  H01L29/36 ,  H01L29/66333

Abstract: A semiconductor device includes transistor cells formed along a first surface at a front side of a semiconductor body in a transistor cell area. A drift zone structure forms first pn junctions with body zones of the transistor cells. An auxiliary structure between the drift zone structure and a second surface at a rear side of the semiconductor body includes a first portion that contains deep level dopants requiring at least 150 meV to ionize. A collector structure directly adjoins the auxiliary structure. An injection efficiency of minority carriers from the collector structure into the drift zone structure varies along a direction parallel to the first surface at least in the transistor cell area.

Abstract translation: 半导体器件包括在晶体管单元区域中沿半导体本体的前侧的第一表面形成的晶体管单元。 漂移区结构与晶体管单元的体区形成第一pn结。 漂移区结构与半导体本体后侧的第二表面之间的辅助结构包括第一部分，其包含需要至少150meV的深层掺杂物以进行电离。 集电器结构直接邻接辅助结构。 至少在晶体管单元区域中，从集电极结构到漂移区结构的少数载流子的注入效率沿平行于第一表面的方向变化。