公开(公告)号：US20160013354A1

公开(公告)日：2016-01-14

申请号：US14860918

申请日：2015-09-22

Applicant: Infineon Technologies AG

Inventor： Michael Mayerhofer ,  Joost Willemen ,  David Johnsson

IPC: H01L31/173 ,  H01L27/15 ,  H01L27/02 ,  H01L33/18 ,  H01L29/861 ,  H01L23/60 ,  H01L29/06 ,  H01L33/34 ,  H02H9/04 ,  H01L29/866

CPC classification number: H01L31/173 ,  H01L23/60 ,  H01L27/0248 ,  H01L27/15 ,  H01L29/0646 ,  H01L29/861 ,  H01L29/866 ,  H01L33/18 ,  H01L33/34 ,  H01L2924/0002 ,  H01L2924/12044 ,  H02H9/04 ,  H01L2924/00

Abstract: An integrated circuit including ESD device is disclosed. One embodiment includes a semiconductor region being electrically isolated from adjacent semiconductor regions by an isolating region. Both an ESD device and a device configured to emit radiation are formed within the semiconductor region.

Abstract translation: 公开了一种包括ESD器件的集成电路。 一个实施例包括通过隔离区域与相邻半导体区域电隔离的半导体区域。 ESD器件和被配置为发射辐射的器件均形成在半导体区域内。

公开(公告)号：US10431708B2

公开(公告)日：2019-10-01

申请号：US14860918

申请日：2015-09-22

Applicant: Infineon Technologies AG

Inventor： Michael Mayerhofer ,  Joost Willemen ,  David Johnsson

IPC: H01L23/60 ,  H01L27/02 ,  H01L29/866 ,  H01L23/62 ,  H01L31/173 ,  H01L27/15 ,  H01L29/06 ,  H01L29/861 ,  H01L33/18 ,  H01L33/34 ,  H02H9/04

Abstract: An integrated circuit including ESD device is disclosed. One embodiment includes a semiconductor region being electrically isolated from adjacent semiconductor regions by an isolating region. Both an ESD device and a device configured to emit radiation are formed within the semiconductor region.