公开(公告)号：US20240047439A1

公开(公告)日：2024-02-08

申请号：US18368914

申请日：2023-09-15

Applicant: Infineon Technologies AG

Inventor： Kirill Trunov ,  Waltraud Eisenbeil ,  Frederick Groepper ,  Joerg Schadewald ,  Arthur Unrau ,  Ulrich Wilke

IPC: H01L25/16 ,  H01L21/48 ,  H01L23/498 ,  H01L23/00

CPC classification number: H01L25/16 ,  H01L21/4853 ,  H01L23/49811 ,  H01L24/32 ,  H01L24/83 ,  H01L24/97 ,  H01L2224/32227 ,  H01L2224/32507 ,  H01L2224/8381 ,  H01L2224/83815

Abstract: An electronic device includes a substrate including first and second metal regions, a first passive device that includes a metal joining surface and is arranged on the substrate with the metal joining surface of the first passive device facing first metal region, a semiconductor die that includes a metal joining surface and is arranged on the substrate with the metal joining surface of the semiconductor die facing the second metal region, a first soldered joint between the metal joining surface of the first passive device and the first metal region; and a second soldered joint between the metal joining surface of the semiconductor die and the second metal region, wherein a minimum thickness of the first soldered joint is greater than a maximum thickness of the second soldered joint.

公开(公告)号：US11798924B2

公开(公告)日：2023-10-24

申请号：US16902725

申请日：2020-06-16

Applicant: Infineon Technologies AG

Inventor： Kirill Trunov ,  Waltraud Eisenbeil ,  Frederick Groepper ,  Joerg Schadewald ,  Arthur Unrau ,  Ulrich Wilke

IPC: H01L25/16 ,  H01L21/48 ,  H01L23/498 ,  H01L23/00 ,  H01L23/373 ,  H01L23/538 ,  H01L25/07

CPC classification number: H01L25/16 ,  H01L21/4853 ,  H01L23/49811 ,  H01L24/32 ,  H01L24/83 ,  H01L24/97 ,  H01L2224/32227 ,  H01L2224/32507 ,  H01L2224/8381 ,  H01L2224/83815

Abstract: A batch soldering method includes providing a first passive device, arranging the first passive device on a first metal region of a substrate with a region of first solder material between the first passive device and the substrate, providing a semiconductor die, arranging the semiconductor die on a second metal region of the substrate with a region of second solder material between the semiconductor die and the substrate, and performing a common soldering step that simultaneously forms a first soldered joint from the region of first solder material and forms a second soldered joint from the region of second solder material. The common soldering step is performed at a soldering temperature such that one or more intermetallic phases form within the second soldered joint, each of the one or more intermetallic phases having a melting point above the second solder material and the soldering temperature.

公开(公告)号：US20210391310A1

公开(公告)日：2021-12-16

申请号：US16902725

申请日：2020-06-16

Applicant: Infineon Technologies AG

Inventor： Kirill Trunov ,  Waltraud Eisenbeil ,  Frederick Groepper ,  Joerg Schadewald ,  Arthur Unrau ,  Ulrich Wilke

IPC: H01L25/16 ,  H01L23/00 ,  H01L23/498 ,  H01L21/48

Abstract: A batch soldering method includes providing a first passive device, arranging the first passive device on a first metal region of a substrate with a region of first solder material between the first passive device and the substrate, providing a semiconductor die, arranging the semiconductor die on a second metal region of the substrate with a region of second solder material between the semiconductor die and the substrate, and performing a common soldering step that simultaneously forms a first soldered joint from the region of first solder material and forms a second soldered joint from the region of second solder material. The common soldering step is performed at a soldering temperature such that one or more intermetallic phases form within the second soldered joint, each of the one or more intermetallic phases having a melting point above the second solder material and the soldering temperature.