公开(公告)号：US20240039526A1

公开(公告)日：2024-02-01

申请号：US17875876

申请日：2022-07-28

Applicant: Infineon Technologies AG

Inventor： Guang ZENG ,  Franz-Josef NIEDERNOSTHEIDE ,  Mark-Matthias BAKRAN ,  Zheming LI

IPC: H03K17/16

CPC classification number: H03K17/166 ,  H03K17/168 ,  H03K2217/0027

Abstract: A method of driving a transistor between switching states includes controlling a transition of a gate voltage at a gate terminal of a transistor during each of a plurality of turn-off switching events to turn off the transistor, wherein the transistor is configured to be turned off according to a desaturation time during each of the plurality of turn-off switching events; measuring a transistor parameter indicative of a voltage slew rate of the transistor for a first turn-off switching event during which the transistor is transitioned from an on state to an off state; and regulating a duration of the desaturation time for a next turn-off switching event based on the measured transistor parameter.

公开(公告)号：US20240088890A1

公开(公告)日：2024-03-14

申请号：US18519563

申请日：2023-11-27

Applicant: Infineon Technologies AG

Inventor： Guang ZENG ,  Franz-Josef NIEDERNOSTHEIDE ,  Mark-Matthias BAKRAN ,  Zheming LI

IPC: H03K17/16 ,  H03K17/687

CPC classification number: H03K17/166 ,  H03K17/168 ,  H03K17/687 ,  H03K2217/0027

Abstract: A method of driving a transistor between switching states includes controlling a transition of a gate voltage at a gate terminal of a transistor during each of a plurality of turn-off switching events to turn off the transistor, wherein the transistor is configured to be turned off according to a desaturation time during each of the plurality of turn-off switching events; measuring a transistor parameter indicative of a voltage slew rate of the transistor for a first turn-off switching event during which the transistor is transitioned from an on state to an off state; and regulating a duration of the desaturation time for a next turn-off switching event based on the measured transistor parameter.

公开(公告)号：US20230290773A1

公开(公告)日：2023-09-14

申请号：US17692509

申请日：2022-03-11

Applicant: Infineon Technologies AG

Inventor： Dethard PETERS ,  Guang ZENG

IPC: H01L27/02 ,  H01L27/06 ,  H01L29/16

CPC classification number: H01L27/0288 ,  H01L27/0629 ,  H01L29/1608

Abstract: An apparatus includes a junction termination edge, a unipolar power transistor, and an RC snubber. The RC snubber has a capacitor between a poly silicon structure and a semiconductor substrate, and part of the junction termination edge. The capacitor has a p-n junction. The RC snubber has a poly silicon resistor between a source of the unipolar power transistor and a first layer forming the capacitor. The unipolar transistor and the RC snubber are coupled in parallel. The RC snubber and the unipolar power transistor are formed monolithically on the semiconductor substrate.