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Patent Agency Ranking
公开(公告)号：US20180315882A1
公开(公告)日：2018-11-01
申请号：US15581549
申请日：2017-04-28
Applicant: Infineon Technologies AG
Inventor： Hans-Joachim Schulze , Johannes Hacker
IPC: H01L31/115 , H01L31/18 , H01L31/0352 , H01L31/0288 , H01L31/0224
CPC classification number: H01L31/115 , H01L31/022408 , H01L31/0288 , H01L31/035272 , H01L31/1804 , H01L31/1864 , H01L31/1872 , H01L31/20
Abstract: A method for forming a semiconductor device includes forming an amorphous semiconductor layer adjacent to a lightly doped region of a semiconductor wafer. The lightly doped region forms at least part of a back side of the semiconductor wafer, and the lightly doped region has a first conductivity type. The method further includes incorporating dopants into the amorphous semiconductor layer during or after forming the amorphous semiconductor layer. The method further includes annealing the amorphous semiconductor layer to transform at least a part of the amorphous semiconductor layer into a substantially monocrystalline semiconductor layer and to form a highly doped region in the monocrystalline semiconductor layer at the back side of the semiconductor wafer. The highly doped region has the first conductivity type.
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公开(公告)号：US09482762B2
公开(公告)日：2016-11-01
申请号：US14471075
申请日：2014-08-28
Applicant: Infineon Technologies AG
Inventor： Friedrich Kroener , Johannes Hacker
Abstract: In various embodiments, a gamma ray detector is provided. The gamma ray detector may include a converter element, configured to release an electron when a gamma ray moves at least partially through the converter element. The gamma ray detector may further include a semiconductor detector, arranged to receive the electron and configured to produce a signal when the electron moves at least partially through the semiconductor detector; and an amplifier circuit, coupled to the semiconductor detector and configured to amplify the signal produced by the semiconductor detector. In the gamma ray detector, the converter element may be arranged to at least partially shield the amplifier circuit from electromagnetic radiation.
Abstract translation: 在各种实施例中，提供了一种伽马射线检测器。 伽马射线检测器可以包括转换器元件，其被配置为当伽马射线至少部分地移动通过转换器元件时释放电子。 伽马射线检测器还可以包括半导体检测器，布置成接收电子并且被配置为当电子至少部分地移动通过半导体检测器时产生信号; 以及放大器电路，耦合到半导体检测器并被配置为放大由半导体检测器产生的信号。 在伽马射线检测器中，转换器元件可以布置成至少部分地将放大器电路屏蔽掉电磁辐射。
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公开(公告)号：US20160061967A1
公开(公告)日：2016-03-03
申请号：US14471075
申请日：2014-08-28
Applicant: Infineon Technologies AG
Inventor： Friedrich Kroener , Johannes Hacker
Abstract: In various embodiments, a gamma ray detector is provided. The gamma ray detector may include a converter element, configured to release an electron when a gamma ray moves at least partially through the converter element. The gamma ray detector may further include a semiconductor detector, arranged to receive the electron and configured to produce a signal when the electron moves at least partially through the semiconductor detector; and an amplifier circuit, coupled to the semiconductor detector and configured to amplify the signal produced by the semiconductor detector. In the gamma ray detector, the converter element may be arranged to at least partially shield the amplifier circuit from electromagnetic radiation.
Abstract translation: 在各种实施例中，提供了一种伽马射线检测器。 伽马射线检测器可以包括转换器元件，其被配置为当伽马射线至少部分地移动通过转换器元件时释放电子。 伽马射线检测器还可以包括半导体检测器，布置成接收电子并且被配置为当电子至少部分地移动通过半导体检测器时产生信号; 以及放大器电路，耦合到半导体检测器并被配置为放大由半导体检测器产生的信号。 在伽马射线检测器中，转换器元件可以布置成至少部分地将放大器电路屏蔽掉电磁辐射。
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公开(公告)号：US10199526B2
公开(公告)日：2019-02-05
申请号：US15581549
申请日：2017-04-28
Applicant: Infineon Technologies AG
Inventor： Hans-Joachim Schulze , Johannes Hacker
IPC: H01L31/115 , H01L21/02 , H01L31/18 , H01L31/0352 , H01L31/0288 , H01L31/0224
Abstract: A method for forming a semiconductor device includes forming an amorphous semiconductor layer adjacent to a lightly doped region of a semiconductor wafer. The lightly doped region forms at least part of a back side of the semiconductor wafer, and the lightly doped region has a first conductivity type. The method further includes incorporating dopants into the amorphous semiconductor layer during or after forming the amorphous semiconductor layer. The method further includes annealing the amorphous semiconductor layer to transform at least a part of the amorphous semiconductor layer into a substantially monocrystalline semiconductor layer and to form a highly doped region in the monocrystalline semiconductor layer at the back side of the semiconductor wafer. The highly doped region has the first conductivity type.
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公开(公告)号：US09733365B2
公开(公告)日：2017-08-15
申请号：US15279477
申请日：2016-09-29
Applicant: Infineon Technologies AG
Inventor： Friedrich Kroener , Johannes Hacker
Abstract: In various embodiments, a gamma ray detector is provided. The gamma ray detector may include a converter element, configured to release an electron when a gamma ray moves at least partially through the converter element. The gamma ray detector may further include a semiconductor detector, arranged to receive the electron and configured to produce a signal when the electron moves at least partially through the semiconductor detector; and an amplifier circuit, coupled to the semiconductor detector and configured to amplify the signal produced by the semiconductor detector. In the gamma ray detector, the converter element may be arranged to at least partially shield the amplifier circuit from electromagnetic radiation.
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