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公开(公告)号：US20150279833A1
公开(公告)日：2015-10-01
申请号：US14225138
申请日：2014-03-25
Applicant: Infineon Technologies AG
Inventor： Josef Dietl , Andre Schmenn , Damian Sojka
IPC: H01L27/02 , H01L23/495
CPC classification number: H01L27/0255 , H01L23/49503 , H01L23/49513 , H01L23/49524 , H01L23/49537 , H01L23/49568 , H01L23/49575 , H01L2224/16245 , H01L2224/45144 , H01L2224/48111 , H01L2224/48465 , H01L2224/48471 , H01L2224/48479 , H01L2224/73257 , H01L2924/00014 , H01L2924/00 , H01L2224/4554
Abstract: In accordance with an embodiment of the present invention, a semiconductor package includes a die paddle and a protection device disposed over the die paddle. The protection device includes a first heat generating zone disposed in a substrate. The first heat generating zone is disposed at a first side facing the die paddle. A solder layer at the first heat generating zone joins the protection device with the die paddle.
Abstract translation: 根据本发明的一个实施例，一种半导体封装包括裸片和设置在裸片上的保护装置。 保护装置包括设置在基板中的第一发热区域。 第一发热区设置在面对模板的第一侧。 第一发热区的焊料层将保护装置与管芯焊盘连接。
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2.发明申请公开(公告)号：US20140308793A1
公开(公告)日：2014-10-16
申请号：US14318118
申请日：2014-06-27
Applicant: Infineon Technologies AG
Inventor： Josef Dietl , Raimund Peichl , Gabriele Bettineschi
IPC: H01L29/93 , H01L21/326
CPC classification number: H01L29/93 , H01L21/326 , H01L29/0692
Abstract: An electrical device includes a semiconductor material. The semiconductor material includes a first region of the semiconductor material having a first conductivity type, a second region of the semiconductor material having a second conductivity type complementary to the first conductivity type and an intermediate region of the semiconductor material between the first region and the second region. The first and second regions lie next to each other the intermediate region so as to form a diode structure. A shape of the intermediate region tapers from the first region to the second region.
Abstract translation: 电气装置包括半导体材料。 半导体材料包括具有第一导电类型的半导体材料的第一区域，具有与第一导电类型互补的第二导电类型的半导体材料的第二区域和第一区域与第二导电类型之间的半导体材料的中间区域 地区。 第一和第二区域彼此相邻地形成中间区域，以便形成二极管结构。 中间区域的形状从第一区域逐渐变细到第二区域。
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公开(公告)号：US20140124893A1
公开(公告)日：2014-05-08
申请号：US13667996
申请日：2012-11-02
Applicant: INFINEON TECHNOLOGIES AG
Inventor： Josef Dietl , Raimund Peichl , Gabriele Bettineschi
CPC classification number: H01L29/93 , H01L21/326 , H01L29/0692
Abstract: An electrical device includes a semiconductor material. The semiconductor material includes a first region of the semiconductor material having a first conductivity type, a second region of the semiconductor material having a second conductivity type complementary to the first conductivity type and an intermediate region of the semiconductor material between the first region and the second region. The first and second regions lie next to each other the intermediate region so as to form a diode structure. A shape of the intermediate region tapers from the first region to the second region.
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公开(公告)号：US09437589B2
公开(公告)日：2016-09-06
申请号：US14225138
申请日：2014-03-25
Applicant: Infineon Technologies AG
Inventor： Josef Dietl , Andre Schmenn , Damian Sojka
CPC classification number: H01L27/0255 , H01L23/49503 , H01L23/49513 , H01L23/49524 , H01L23/49537 , H01L23/49568 , H01L23/49575 , H01L2224/16245 , H01L2224/45144 , H01L2224/48111 , H01L2224/48465 , H01L2224/48471 , H01L2224/48479 , H01L2224/73257 , H01L2924/00014 , H01L2924/00 , H01L2224/4554
Abstract: In accordance with an embodiment of the present invention, a semiconductor package includes a die paddle and a protection device disposed over the die paddle. The protection device includes a first heat generating zone disposed in a substrate. The first heat generating zone is disposed at a first side facing the die paddle. A solder layer at the first heat generating zone joins the protection device with the die paddle.
Abstract translation: 根据本发明的一个实施例，一种半导体封装包括裸片和设置在裸片上的保护装置。 保护装置包括设置在基板中的第一发热区域。 第一发热区设置在面对模板的第一侧。 第一发热区的焊料层将保护装置与管芯焊盘连接。
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