Abstract:
An electrical device includes a semiconductor material. The semiconductor material includes a first region of the semiconductor material having a first conductivity type, a second region of the semiconductor material having a second conductivity type complementary to the first conductivity type and an intermediate region of the semiconductor material between the first region and the second region. The first and second regions lie next to each other the intermediate region so as to form a diode structure. A shape of the intermediate region tapers from the first region to the second region.
Abstract:
A semiconductor device includes a chip, a contact pad arranged over the front side of the chip and an identification mark arranged over the contact pad. The identification mark includes an information about a property of the chip.
Abstract:
An electrical device includes a semiconductor material. The semiconductor material includes a first region of the semiconductor material having a first conductivity type, a second region of the semiconductor material having a second conductivity type complementary to the first conductivity type and an intermediate region of the semiconductor material between the first region and the second region. The first and second regions lie next to each other the intermediate region so as to form a diode structure. A shape of the intermediate region tapers from the first region to the second region.
Abstract:
A semiconductor device includes a chip, a contact pad arranged over the front side of the chip and an identification mark arranged over the contact pad. The identification mark includes an information about a property of the chip.
Abstract:
A method for processing a chip is provided. The method may include: providing a chip having a front side and a back side; and forming an orientation marker on the back side of the chip by forming a hole into the chip from the front side of the chip, the hole forming the orientation marker.