Varactor Diode, Electrical Device and Method for Manufacturing Same
    1.
    发明申请
    Varactor Diode, Electrical Device and Method for Manufacturing Same 审中-公开
    变容二极管,电气设备及其制造方法相同

    公开(公告)号:US20140308793A1

    公开(公告)日:2014-10-16

    申请号:US14318118

    申请日:2014-06-27

    CPC classification number: H01L29/93 H01L21/326 H01L29/0692

    Abstract: An electrical device includes a semiconductor material. The semiconductor material includes a first region of the semiconductor material having a first conductivity type, a second region of the semiconductor material having a second conductivity type complementary to the first conductivity type and an intermediate region of the semiconductor material between the first region and the second region. The first and second regions lie next to each other the intermediate region so as to form a diode structure. A shape of the intermediate region tapers from the first region to the second region.

    Abstract translation: 电气装置包括半导体材料。 半导体材料包括具有第一导电类型的半导体材料的第一区域,具有与第一导电类型互补的第二导电类型的半导体材料的第二区域和第一区域与第二导电类型之间的半导体材料的中间区域 地区。 第一和第二区域彼此相邻地形成中间区域,以便形成二极管结构。 中间区域的形状从第一区域逐渐变细到第二区域。

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