公开(公告)号：US20250105022A1

公开(公告)日：2025-03-27

申请号：US18886502

申请日：2024-09-16

Applicant: Infineon Technologies AG

Inventor： Hans-Joachim Schulze ,  Daniel Schlögl ,  Josef Riss

IPC: H01L21/324 ,  C30B29/06 ,  H01L21/268 ,  H01L21/322 ,  H01L29/739

Abstract: A method of manufacturing semiconductor devices in a silicon MCZ (magnetic Czochralski) semiconductor body is proposed. The method includes processing the silicon MCZ semiconductor body by an oxidation process at temperatures exceeding 1150° C. and below 1220° C. Thereafter, platinum (Pt) is introduced into the silicon MCZ semiconductor body.

公开(公告)号：US20150294868A1

公开(公告)日：2015-10-15

申请号：US14253519

申请日：2014-04-15

Applicant: Infineon Technologies AG

Inventor： Gerhard Schmidt ,  Josef Riss ,  Thomas Neidhart

IPC: H01L21/225 ,  H01L29/167 ,  H01L29/36 ,  H01L21/322

CPC classification number: H01L29/36 ,  H01L21/26506 ,  H01L21/3225

Abstract: Chalcogen atoms are implanted into a single crystalline semiconductor substrate. At a density of interstitial oxygen of at least 5E16 cm−3 thermal donors containing oxygen are generated at crystal defects in the semiconductor substrate. Then the semiconductor substrate is heated up to a temperature above a deactivation temperature at which the thermal donors become inactive, wherein a portion of electrically active chalcogen atoms is increased.

Abstract translation: 将硫族原子注入单晶半导体衬底中。 在至少5E16cm-3的间隙氧的密度下，在半导体衬底中的晶体缺陷处产生含有氧的热供体。 然后将半导体衬底加热到​​高于失活温度的温度，在此温度下，供体不活跃，其中一部分电活性硫属原子增加。