公开(公告)号：US20160126197A1

公开(公告)日：2016-05-05

申请号：US14932548

申请日：2015-11-04

Applicant: Infineon Technologies AG

Inventor： Kurt Matoy ,  Dirk Ahlers ,  Ulrike Fastner ,  Petra Fischer ,  Karl-Heinz Gasser ,  Stephan Henneck ,  Stefan Krivec ,  Florian Weilnboeck

IPC: H01L23/00 ,  H01L23/495 ,  H01L29/45 ,  H01L23/31

CPC classification number: H01L23/562 ,  H01L23/49524 ,  H01L23/49562 ,  H01L24/32 ,  H01L24/83 ,  H01L29/45 ,  H01L2224/0603 ,  H01L2224/32245 ,  H01L2224/40245 ,  H01L2224/8321 ,  H01L2224/83815 ,  H01L2924/014 ,  H01L2924/3511 ,  H01L2924/37001

Abstract: A semiconductor device includes a semiconductor chip having a first main surface and a second main surface. A chip electrode is disposed on the first main surface. The chip electrode includes a first metal layer and wherein the first metal layer is arranged between the semiconductor chip and the second metal layer.

Abstract translation: 半导体器件包括具有第一主表面和第二主表面的半导体芯片。 芯片电极设置在第一主表面上。 芯片电极包括第一金属层，并且其中第一金属层布置在半导体芯片和第二金属层之间。